IEEE Transactions on Microwave Theory and Techniques最新文献_第2页

SIW-Based Input-Reflectionless Filter/Filtenna Using Complementary-Diplexer Architectures

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-28 DOI: 10.1109/TMTT.2025.3532037

Shiyan Wang;Hao-Chen Li;Li Yang;Gang Zhang;Roberto Gómez-García

{"title":"SIW-Based Input-Reflectionless Filter/Filtenna Using Complementary-Diplexer Architectures","authors":"Shiyan Wang;Hao-Chen Li;Li Yang;Gang Zhang;Roberto Gómez-García","doi":"10.1109/TMTT.2025.3532037","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3532037","url":null,"abstract":"In this article, a class of input-reflectionless filter/ filtenna on substrate-integrated-waveguide (SIW) technology that exploits complementary-diplexer design principles is proposed. By extracting and controlling the couplings between the adjacent SIW-based cavities to satisfy a predesigned coupling matrix, a bandpass-type filtering functionality with out-of-band RF-input-reflectionless capabilities can be obtained. To this aim, a pair of frequency-complementary channels is employed, namely a bandpass channel for transmission and its complementary resistively loaded bandstop counterpart for stopband RF-power absorption. Based on this design approach, a third-order input-reflectionless SIW bandpass filter and a second-order input-absorptive SIW diplexer are realized. Subsequently, the last cavity resonator of the bandpass channel is replaced by a SIW-based radiator to form a filtenna with the same input-reflection frequency response. In this manner, based on the aforementioned input-reflectionless filter and diplexer, single- and dual-band SIW-based filtennas with reflectionless characteristics are conceived. Measured results of manufactured proof-of-concept prototypes are provided to experimentally validate the proposed design methodology of input-reflectionless SIW-based filter/filtenna. For these built devices of filter, diplexer, and single- and dual-band filtennas, wide-band reflectionless frequency ranges being <inline-formula> <tex-math>$47.5times $ </tex-math></inline-formula>, <inline-formula> <tex-math>$18.06times $ </tex-math></inline-formula>, <inline-formula> <tex-math>$27.7times $ </tex-math></inline-formula>, and <inline-formula> <tex-math>$11.6times $ </tex-math></inline-formula> larger than their associated operational frequency bands are, respectively, demonstrated.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2206-2216"},"PeriodicalIF":4.1,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Configurable Multimode Nonuniform Eye-Opening Monitor for High-Speed Wireline Communication Achieving 3-μs EW/EH Evaluation and 0.98-R² Accuracy

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-22 DOI: 10.1109/TMTT.2025.3528001

Chenxi Han;Xiaoteng Zhao;Menghao Wang;Xianting Su;Zhicheng Dong;Hongzhi Liang;Shubin Liu;Zhangming Zhu

{"title":"A Configurable Multimode Nonuniform Eye-Opening Monitor for High-Speed Wireline Communication Achieving 3-μs EW/EH Evaluation and 0.98-R² Accuracy","authors":"Chenxi Han;Xiaoteng Zhao;Menghao Wang;Xianting Su;Zhicheng Dong;Hongzhi Liang;Shubin Liu;Zhangming Zhu","doi":"10.1109/TMTT.2025.3528001","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3528001","url":null,"abstract":"This article presents a configurable multimode eye-opening monitor (EOM) with nonuniform sampling and quantization for an on-chip high-speed link built-in self-test (BIST). The EOM can operate in three modes, enabling it to not only capture the color-graded eye diagram but also rapidly outline its contour, eye height (EH), and eye width (EW). In the nonuniform scanning mode (NSM), the EH and EW are swiftly measured using an optimization algorithm to adjust the control codes of a phase interpolator (PI) and a digital-to-analog converter (DAC). In the fast-multisampling mode (FMSM), the reduced number of samples in each pixel facilitates a prompt generation of the eye contour. The EOM can also reconstruct the eye diagram in the multisampling mode (MSM) by analyzing the probability density function (PDF) of a <inline-formula> <tex-math>$128times 63$ </tex-math></inline-formula> pixel array. Fabricated in a 28-nm CMOS technology, the EOM can operate up to 26 Gb/s within 0.005-mm2 area. At 26 Gb/s, it consumes 14.55 mW with more than 0.98-<inline-formula> <tex-math>$R^{2}$ </tex-math></inline-formula> accuracy and takes up <inline-formula> <tex-math>$933~mu $ </tex-math></inline-formula>s in the MSM, <inline-formula> <tex-math>$597~mu $ </tex-math></inline-formula>s in the FMSM, and <inline-formula> <tex-math>$sim 3~mu $ </tex-math></inline-formula>s in the NSM, respectively.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2036-2049"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 192–229-GHz 4.4-dBm CMOS Frequency Tripler With Slotline-Based Drain Harmonic Shaping

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-22 DOI: 10.1109/TMTT.2025.3529081

Yifan Ding;Yizhu Shen;Zhen Lin;Yun Qian;Zhenghuan Wei;Sanming Hu

{"title":"A 192–229-GHz 4.4-dBm CMOS Frequency Tripler With Slotline-Based Drain Harmonic Shaping","authors":"Yifan Ding;Yizhu Shen;Zhen Lin;Yun Qian;Zhenghuan Wei;Sanming Hu","doi":"10.1109/TMTT.2025.3529081","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3529081","url":null,"abstract":"Frequency triplers in CMOS processes are seldomly explored in the terahertz (THz) band due to the low output power. To address this challenging issue of output power, this article proposes a drain harmonic shaping method for frequency triplers. For theoretical analysis, a modified Enz-Krummenacher–Vittoz (EKV) model suitable for third harmonic analysis is presented for the first time. Using this model, the optimal waveform at drain is derived and the third harmonic generation is analyzed in detail. Compared to conventional triplers, the proposed approach optimizes harmonic utilization at both the drain and source by enhancing the third harmonic through strengthening the second harmonic at the drain and weakening it at the source. Slotline (SLOT) with common-mode (CM) rejection is used to independently control odd- and even-order harmonics, while the SLOT-based output network is designed for both drain harmonic shaping and power combining. For validation, a frequency tripler in 40-nm bulk CMOS technology is fabricated and measured. The proposed tripler achieves a saturate output power (<inline-formula> <tex-math>${P} _{text {sat}}$ </tex-math></inline-formula>) of 4.4 dBm at 211.5 GHz with a 3-dB bandwidth (BW) from 192 to 229 GHz and a second harmonic rejection ratio (HRR) larger than 26 dBc. Benefiting from the compact passive networks, the tripler also features a core area of 0.09 mm2 only. To the best of our knowledge, around 200 GHz, the proposed tripler achieves the highest <inline-formula> <tex-math>${P} _{text {sat}}$ </tex-math></inline-formula> among CMOS triplers and is comparable to CMOS doublers.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"1896-1911"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cramér–Rao-Bound-Based Sensitivity Analysis and Verification of a Digital Microwave Radiometer

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-22 DOI: 10.1109/TMTT.2025.3528078

Lukas Furtmüller;Michael Winklehner;Stefan Schuster;Stefan Scheiblhofer;Andreas Stelzer;Reinhard Feger

引用次数: 0

2024 Index IEEE Transactions on Microwave Theory and Techniques Vol. 72 微波理论与技术学报，第72卷

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-17 DOI: 10.1109/TMTT.2025.3530846

引用次数: 0

Corrections to “PCIe 5.0 Connector Distributed Physical-Based Circuit Model With Loading Resonances for Fast SI Diagnosis and Pathfinding” 修正“PCIe 5.0连接器分布式基于物理的电路模型与加载共振用于快速SI诊断和寻路”

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-07 DOI: 10.1109/TMTT.2024.3521177

Yulin He;Kewei Song;Haonan Wu;Milton Feng

引用次数: 0

Editori-in-Chief Call for Applicants 总编辑招聘

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-07 DOI: 10.1109/TMTT.2024.3522617

引用次数: 0

Fully Integrated Multimode Orbital Angular Momentum Wave Generation at 360 GHz Using SiGe BiCMOS

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-06 DOI: 10.1109/TMTT.2024.3522803

Wei Sun;Sidharth Thomas;Aydin Babakhani

{"title":"Fully Integrated Multimode Orbital Angular Momentum Wave Generation at 360 GHz Using SiGe BiCMOS","authors":"Wei Sun;Sidharth Thomas;Aydin Babakhani","doi":"10.1109/TMTT.2024.3522803","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3522803","url":null,"abstract":"This article presents a fully integrated multimode orbital angular momentum (OAM) transmitter using a circular slot cavity antenna, capable of concurrently operating three orthogonal OAM modes (<inline-formula> <tex-math>$|l_{text {oam}}| =0$ </tex-math></inline-formula>, 1, and 2) while maintaining a common phase center. This allows the use of passive gain elements like lenses or reflectors for directivity enhancement. Additionally, the transmitter takes advantage of high-order cavity modes eliminating the complex multiphase feeding network. Detailed studies about the angular momentum (AM) of the radiated electromagnetic (EM) wave and the correlation between the antenna mode and OAM/SAM mode are provided in this article. The single-element transmitter is composed of a 120-GHz oscillator and a p-i-n diode frequency tripler interfacing with harmonic filtering networks. The transmitter can generate OAM waves at 360-GHz signal with a peak radiated power of −8.1 dBm and a dc-to-THz efficiency of 0.1%. It also exhibits a wide-frequency tuning range of 14.2%. The chip is fabricated in the GlobalFoundries 90-nm BiCMOS process. Apart from transmitter design, this work also introduces a method for measuring OAM amplitude and phase distribution that does not require Tx/Rx frequency and phase coherency, simplifying the measurement process and ensuring accurate characterization of OAM modes. Its ability to operate in multiple OAM modes simultaneously, combined with its compact and efficient design, highlights its potential for future secure high-capacity communication applications.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2061-2072"},"PeriodicalIF":4.1,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compact Bi-Directional PA-LNA Using Stacked Power Amplifier Enhancing Linearity and Stability

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-01-01 DOI: 10.1109/TMTT.2024.3520344

Jun Hwang;Byung-Wook Min

{"title":"Compact Bi-Directional PA-LNA Using Stacked Power Amplifier Enhancing Linearity and Stability","authors":"Jun Hwang;Byung-Wook Min","doi":"10.1109/TMTT.2024.3520344","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3520344","url":null,"abstract":"This article presents a compact Ka-band bi-directional power amplifier-low-noise amplifier (PA-LNA) utilizing a three-stack power amplifier (PA) in a 28-nm CMOS process. In the proposed PA-LNA, the input and output of the three-stack PA are cross-coupled with the output and input of the common-source (CS) low-noise amplifier (LNA). This configuration neutralizes the gate-drain capacitance of the LNA through the parasitic capacitance (<inline-formula> <tex-math>$C_{text {para}.}$ </tex-math></inline-formula>) of the three-stack PA, improving stability and gain in the LNA mode. Simultaneously, the three-stack PA achieves higher output power and gain in the PA mode. Moreover, since <inline-formula> <tex-math>$C_{text {para}.}$ </tex-math></inline-formula> of the transistors are connected in series, the transistor sizes for the PA and LNA can be selected asymmetrically, alleviating the tradeoff between linearity in the PA mode and dc power consumption in the LNA mode. Additionally, the output conductance of the <sc>off</small>-state PA is enhanced by stacking more transistors and applying appropriate biasing to keep them in the <sc>off</small>-state, leading to an improved noise figure (NF) in the LNA mode. Furthermore, transformer-based switching matching networks (MNs) enable fully bi-directional operation within a compact die area of 0.1 mm2. In the PA mode, the proposed PA-LNA achieves a peak gain of 20.4 dB with a 3-dB bandwidth of 8.1 GHz (27.3–35.4 GHz), a saturated output power (<inline-formula> <tex-math>$P_{text {sat}}$ </tex-math></inline-formula>) of 17.4 dBm, a peak power-added-efficiency (PAE) of 17.2%, and an error vector magnitude (EVM) of −32.0 dB with 256-quadrature amplitude modulation (QAM) at an 800-MBaud symbol rate and 7.6-dBm average output power. In the LNA mode, the proposed PA-LNA achieves a peak gain of 17.3 dB with a 3-dB bandwidth of 8 GHz (28.0–36.0 GHz), a noise figure (NF) of 5.3 dB, and an input third-order intercept point (IIP3) of 0 dBm.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2000-2008"},"PeriodicalIF":4.1,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Efficient and General Automated Power Amplifier Design Method Based on Surrogate Model Assisted Hybrid Optimization Technique

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-12-31 DOI: 10.1109/TMTT.2024.3518913

Bo Liu;Liyuan Xue;Haijun Fan;Yuan Ding;Muhammad Imran;Tao Wu

引用次数: 0