Maciej Jasinski;Adam Lamecki;Roberto Gómez-García;Michal Mrozowski
{"title":"RF-Input-Quasi-Reflectionless Filtering Dispersive-Delay Structures Based on Complementary-Diplexer Architectures","authors":"Maciej Jasinski;Adam Lamecki;Roberto Gómez-García;Michal Mrozowski","doi":"10.1109/TMTT.2025.3542251","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3542251","url":null,"abstract":"The theoretical design and practical development of a family of high-order bandpass filtering dispersive-delay structures (DDSs) with radiofrequency (RF)-input-quasi-absorptive capabilities are presented. They consist of RF complementary-diplexer-based circuits, in which the main channel is a reflective-type bandpass filtering DDS and the resistively terminated auxiliary channel exhibits a bandstop filtering response with a quasi-complementary frequency profile with regard to that of the main channel. In this manner, the out-of-band/non-transmitted RF-input-signal power echoed by the main channel is mostly dissipated by the loading resistor of the auxiliary channel. As a fundamental constituent circuit block arranged in in-series-cascaded configurations for high-order reflective-type bandpass filtering DDS realizations, a triplet coupled-resonator network with one frequency-dependent coupling (FDC) is used. Its transmission properties are nearly transferred to the total RF-input-quasi-absorptive bandpass filtering DDS, which preserves the patterned group-delay/phase-variation response of the main channel. The theoretical design method of the devised RF-input-quasi-reflectionless bandpass filtering DDSs is detailed and exemplified with fifth- and seventh-order synthesis examples. It is based on a two-step design process, as follows: 1) separate polynomial/coupling-matrix synthesis of the main and auxiliary channels for the desired bandpass filtering DDS specifications in transmission and the complementary bandstop filtering functionality, respectively, and 2) coupling-matrix optimization of the overall RF-input-quasi-absorptive bandpass filtering DDS. Furthermore, for experimental demonstration purposes, a 2-GHz microstrip prototype of the previously designed RF-input-quasi-reflectionless fifth-order filtering DDS that features a stepped-type group-delay response is manufactured and characterized.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3319-3333"},"PeriodicalIF":4.1,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Ka-Band Four-Beam High-Linearity Transmitter With Beam Interference Cancellation for SATCOM Multibeam Communication","authors":"Huiyan Gao;Shaogang Wang;Xinhong Xie;Nayu Li;Hang Lu;Yen-Cheng Kuan;Xiaopeng Yu;Chunyi Song;Qun Jane Gu;Zhiwei Xu","doi":"10.1109/TMTT.2025.3542097","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3542097","url":null,"abstract":"This article presents a 27.7–31.2-GHz highly integrated eight-element, four-beam transmitter front end in 65-nm CMOS for phased-array multibeam communication. To eliminate beam interference in multibeam coherent communication, an interference cancellation scheme is introduced within the multibeam transmitter. In the circuit design, the proposed hybrid variable-gain amplifiers (VGAs) combine digital common-source (CS) VGAs and analog Gilbert-cell-based VGAs to achieve both a large dynamic range and high resolution. The hybrid VGAs are then embedded into a transmission-line-based network, forming a compact <inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula> beam combining structure. To support multibeam phase steering, four pairs of Gm arrays interpolate four individual phase sates from the same I/Q signals generated by low- and high-pass lumped delay lines. These delay lines are inserted between CS transistors and common-gate (CG) transistors to isolate the impedance fluctuates of magnetic coupling resonance load across frequency. To manage the high peak-to-average power ratio (PAPR) modulation signal, the output stage employs a symmetrical transformer-based Doherty load modulation network and an analog adaptive gain control in the auxiliary path to improve the power-back-off (PBO) efficiency. With a 1.1-V supply voltage, this transmitter achieves a saturated output power (Psat) of 19.2 dBm with a 20.5% channel efficiency (CE) and an output power 1-dB compression point (OP1dB) of 18.2 dBm. The measured maximum drain efficiency (DE) is 40.8%, while the 6-dB PBO DE is 28%, indicating improvements of 40%/180% compared to the normalized class-B/A implementations. The proposed hybrid VGA achieves a 27-dB tuning range and a 0.25-dB gain step with 0.26-dB/1.9° root mean square (rms) gain/phase errors, while the phase shifter (PS) implements 6-bit, 360° phase shifting with 0.25-dB/2.5° rms gain/phase errors, enabling precise gain tapering and beam steering.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2009-2022"},"PeriodicalIF":4.1,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"PCM-Based Bandwidth-Reconfigurable Acoustic-Wave Filter","authors":"Matthew Ou;Raafat R. Mansour","doi":"10.1109/TMTT.2025.3542357","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3542357","url":null,"abstract":"We present the design, fabrication, and experimental testing of bandwidth-reconfigurable surface acoustic-wave (SAW) filters with integrated vanadium dioxide (VO2)-based radio frequency (RF) switches. We propose a design that utilizes the phase-change properties of VO2, which transitions between insulating and conductive states to enable dynamic reconfiguration of the SAW filter bandwidth. By modifying the interdigital transducer (IDT) configurations, the electromechanical coupling coefficient (k2) of the resonators can be varied, thus enabling the reconfiguration across different bandwidths. Experimental results demonstrated the bandwidth adjustability offered by the proposed design, and the fabricated prototype filters suggested that monolithically integrated VO2-based RF switches can provide a flexible solution for reconfigurable acoustic filters. To the best of our knowledge, this work represents the first demonstration of bandwidth-reconfigurable acoustic filters with monolithically integrated RF switches with acoustic resonators.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3252-3262"},"PeriodicalIF":4.1,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Mehrabi Gohari;Oleksandr Glubokov;Joachim Oberhammer
{"title":"Inline Waveguide Filters With Transmission Zeros Using Frequency-Variant Couplings","authors":"Mohammad Mehrabi Gohari;Oleksandr Glubokov;Joachim Oberhammer","doi":"10.1109/TMTT.2025.3541149","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3541149","url":null,"abstract":"This article introduces a novel frequency-variant coupling structure with high adjustability for waveguide filters. Although this structure is proposed for rectangular cavities, the same principle can be applied to other cavity geometries. The proposed structure is compatible with standard micromachining technologies. Using this coupling structure, two inline Nth-order waveguide filters with <inline-formula> <tex-math>$N-1$ </tex-math></inline-formula> and <inline-formula> <tex-math>$N+1$ </tex-math></inline-formula> transmission zeros (TZs) are developed. A fourth-order bandpass filter (BPF) with three TZs at 245, 285, and 288 GHz is designed, operating at a center frequency of 270 GHz with a 2% fractional bandwidth. In addition, a second-order BPF with a center frequency of 280 GHz and a 0.71% fractional bandwidth, utilizing three TZs at 230, 300, and 308 GHz, is also developed. Prototypes of both filters are fabricated using silicon micromachining. The measured insertion loss and return loss (RL) in the passband are 2 dB and better than 18 dB, respectively, for the fourth-order filter and 2.1 dB and better than 11 dB for the second-order filter, respectively.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3310-3318"},"PeriodicalIF":4.1,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10896591","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"New Reconfigurable mmWave Filters Enabled by Vanadium Dioxide","authors":"Thomas G. Williamson;Nima Ghalichechian","doi":"10.1109/TMTT.2025.3540432","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3540432","url":null,"abstract":"This article presents fundamental research of new on-chip reconfigurable bandpass filters for mmWave applications. Two designs for a 2-band, 2-pole bandpass filter in coplanar waveguide (CPW) on a <inline-formula> <tex-math>$430~mu $ </tex-math></inline-formula>m sapphire substrate, incorporating silicon dioxide metal-insulator-metal (MIM) capacitors and bridges are presented. Vanadium dioxide (VO2) is integrated directly into the filter to enable 2-band reconfiguration. The wide-tuning filter design has two bands centered at 38.5 and 49 GHz, with 3 dB bandwidths of 4.7 and 6.0 GHz, respectively. The wideband filter design has two bands centered at 30.1 and 36.5 GHz, with 3 dB bandwidths of 22.0 and 22.3 GHz, respectively. In-band insertion loss (IL) was measured to be 2.7 and 4.4 dB, respectively. The 2-pole 2-band filter has the typical 40 dB per decade increase of IL as designed. The filter’s input, referred to as 1 dB compression point, is measured to be above 22 dBm at 26.5 GHz, for both bands. The filter has an area of 0.184 mm2, which is 2% of the interelement area of a typical 50 GHz tiled array. The passband shifts by 21.2% from low-band to high-band center frequency. Subcomponent testing of shunt VO2 switches has shown a switching time averaging <inline-formula> <tex-math>$2.2~mu $ </tex-math></inline-formula>s, which indicates a filter tuning speed of 3.16 GHz/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>s. The novel reconfigurable mmWave on-chip filter’s combination of power handling and small size is, to the best of the authors’ knowledge, the current state of the art.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3263-3274"},"PeriodicalIF":4.1,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 27-GHz Full-Duplex Receiver With a Three-Port Dual-Polarized Antenna and High IIP3 Low-Noise Amplifier for Mobile Phased Array Systems","authors":"Jonghoon Myeong;Kyutae Park;Byung-Wook Min","doi":"10.1109/TMTT.2025.3539728","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3539728","url":null,"abstract":"This article proposes a full-duplex (FD) receiver (Rx) with highly isolated antennas and highly linear low-noise amplifier (LNA) for mobile phased array systems. The shared-aperture antennas constituting the array are dual-polarized, three-port structures with differential feeds for high isolation. In addition, the antennas are designed as stacked square patches to operate at the same frequency with a wideband. The chip is designed with a highly linear receiver so that the signal-to-noise distortion ratio (SNDR) does not deteriorate even when high self-interference (SI) is received in an FD system. The LNA is a highly linear amplifier using the source-sensed derivative superposition (SSDS) technique. In addition, the Rx uses a passive phase shifter and an attenuator for high linearity. The phase shifter is designed as a switched delay type, and the attenuator is designed with a distributed attenuator. For system analysis, the antenna is fabricated with a six-layer printed circuit board (PCB), and the chip is integrated with the flip-chip packaging in a 28-nm CMOS process and measured. The antennas are fabricated as single, <inline-formula> <tex-math>$1 times 2$ </tex-math></inline-formula>, and <inline-formula> <tex-math>$1 times 4$ </tex-math></inline-formula> arrays, achieving <inline-formula> <tex-math>$gt -40$ </tex-math></inline-formula> dB of isolation at 25.5–27.3 GHz. The measured gain, noise figure (NF), input 1-dB compression point (IP1dB), and input third-order intercept point (IIP3) of single Rx channel are 11.8 dB, 5.5–7.6 dB, -11 dBm, and -1 dBm, respectively, with 42-mA current from the 1.8-V supply voltage. The experimental results show that sufficient antenna isolation and high-linearity receiver can be used in a mobile mm-Wave array with effective isotropically radiated power (EIRP) of 22 dBm and 1-GHz bandwidth without saturation and SNDR degradation.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3223-3235"},"PeriodicalIF":4.1,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Ku-Band 40 W Dual Output GaN Power Amplifier MMIC Integrated With a Novel Reliability Enhancement Circuit for Load Mismatch","authors":"Hui Jin;Fei Yang;Hongqi Tao;Yanfang Zhou;Wei Xiao","doi":"10.1109/TMTT.2024.3519189","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3519189","url":null,"abstract":"The load mismatch reliability issue is a significant challenge in designing high-power amplifiers. This article presents a Ku-band single-input dual-output gallium nitride (GaN) high-power amplifier microwave monolithic integrated circuit (MMIC) integrated with a load-mismatched reliability enhancement circuit. Load-mismatched power detecting and automatic impedance reconfiguration techniques are demonstrated. In the load-mismatched power detecting technique, a novel buck circuit is proposed to cope with different load mismatch magnitude and phase variations; in the automatic impedance reconfiguration technique, a novel bandwidth broadening method is proposed by adding a series capacitor to the switch transistor. The reconfigured output matching network (OMN) increases the impedance at 15 and 16 GHz, reduces the peak output power and drain current, and lowers the junction temperature of the single-pole double-throw (SPDT) switch, resulting in enhanced load mismatch reliability with a response time of 40 nS. All active devices are fabricated using the GaN power amplifier and switch integration process. The measured output power of the MMIC is 46.1–47.0 dBm at 28 V operating voltage at 14–18 GHz frequency band, and the power-added efficiency (PAE) is 29.3%–35.2%. The MMIC’s size is <inline-formula> <tex-math>$4.5times 5.7$ </tex-math></inline-formula> mm2. Compared with the reported techniques, the proposed MMIC has higher output power and PAE, and it automatically triggers the reliability enhancement function after load mismatch without relying on external signals and has a faster response time.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 7","pages":"3865-3878"},"PeriodicalIF":4.1,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Sub-6 GHz Wideband Transceiver Chipset With Calibration-Friendly Harmonic Rejection RF Front-Ends","authors":"Haoyu Bai;Ling Hao;Dong Wang;Ningyuan Zhang;Keer Gao;Jiaqi He;Jiazheng Zhou;Junhua Liu;Huailin Liao","doi":"10.1109/TMTT.2025.3535587","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3535587","url":null,"abstract":"This article presents a transmitter (TX) and receiver (RX) system operating in the 0.1–6 GHz frequency range with multi-protocol compatibility, which integrates local oscillator (LO) harmonic rejection (HR) radio frequency front-ends (RFFE) spanning 0.1–2.5 GHz, with frequency-adaptive calibration capabilities. In the HR-RFFE, programmable RC networks are deployed in both the TX and RX to achieve intermediate frequency (IF) domain HR and pre-calibration. An 8-phase LO signal generation, utilizing a D flip-flop (DFF) based chain, is employed to facilitate HR calibration. To mitigate HR degradation caused by LO phase errors, the TX employs a cross-connected Gilbert phase detector (PD) to assess the orthogonality of 90° shifted LO signals, enabling LO calibration. For the receiver, phase errors are directly calculated via the baseband (BB) output at a much lower frequency. Fabricated in 40-nm CMOS technology, the TX features a core area of 1.2 mm2, a programmable gain range of -12–26 dB, a P1dB compression point of 16.1 dBm, and a system efficiency of 25.9%. The third and fifth harmonic rejection ratios (HRRs) exceed 46.9 and 53.5 dBc, respectively. The receiver, which incorporates an integrated ADPLL, shows a core area of 1.4 mm2, a maximum gain of 68.4 dB, a minimum noise figure of 3.9 dB, and an odd-order HRR exceeding 71 dBc.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2084-2096"},"PeriodicalIF":4.1,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2024 Reviewers List","authors":"Almudena Suarez","doi":"10.1109/TMTT.2025.3531020","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3531020","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"692-702"},"PeriodicalIF":4.1,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10877712","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Editori-in-Chief Call for Applicants","authors":"","doi":"10.1109/TMTT.2025.3537525","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3537525","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"1285-1285"},"PeriodicalIF":4.1,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10877701","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}