A Compact Dual-Mode Dual-Band CMOS Power Amplifier Covering 5G FR1 and FR2

IF 4.1 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-02-27 DOI:10.1109/TMTT.2025.3543447

Jingye Zhang;Jiawen Chen;Taotao Xu;Pei Qin;Xiang Yi;Liang Wu;Haoshen Zhu;Wenquan Che;Quan Xue

{"title":"A Compact Dual-Mode Dual-Band CMOS Power Amplifier Covering 5G FR1 and FR2","authors":"Jingye Zhang;Jiawen Chen;Taotao Xu;Pei Qin;Xiang Yi;Liang Wu;Haoshen Zhu;Wenquan Che;Quan Xue","doi":"10.1109/TMTT.2025.3543447","DOIUrl":null,"url":null,"abstract":"This article presents a dual-mode, dual-band power amplifier (PA) capable of covering both the fifth-generation (5G) FR1 and FR2 bands for 5G user equipment driver applications. The common-mode (CM) path, often overlooked in a typical differential-mode (DM) CMOS PA, is analyzed and utilized as an alternative path to cover a second frequency band. A universal topology is proposed for the utilization of both DM and CM in PA and other RF circuits. By assigning the millimeter-wave (mm-Wave) and sub-7 GHz bands to DM and CM paths, respectively, this PA achieves coverage of both 3.5 and 27 GHz bands with only one amplifying stage and consequently a compact layout. On the DM path, the proposed PA achieves a <inline-formula> <tex-math>${P}_{1{\\text{dB}}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${\\mathrm {PAE}}_{1{\\text {dB}}}$ </tex-math></inline-formula> of 18.1 dBm and 32.4% at 24 GHz, while on the CM path, the corresponding performance is 15.3 dBm and 35.5% at 3.7 GHz. The proposed PA exhibits an adjacent channel leakage ratio (ACLR) of −25.9 dBc, an average power-added efficiency (PAE) of 17%, and an average output power of 12.4 dBm at −24.7 dB EVMRMS with a 64 QAM 200 MSym/s modulation signal at 26 GHz in DM. Similarly, with 256 QAM 50 MSym/s modulation at 3.6 GHz in CM, the PA demonstrates −35.6 dBc ACLR, 22.5% average PAE, and 10.7 dBm average power at −31.1 dB EVMRMS. Furthermore, measurements with two carriers at 24 and 3.7 GHz indicate that the PA has the potential for concurrent operation in both modes. The PA is fabricated in a 65 nm CMOS process with a core area of 0.32 mm2.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"1985-1999"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10907266/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This article presents a dual-mode, dual-band power amplifier (PA) capable of covering both the fifth-generation (5G) FR1 and FR2 bands for 5G user equipment driver applications. The common-mode (CM) path, often overlooked in a typical differential-mode (DM) CMOS PA, is analyzed and utilized as an alternative path to cover a second frequency band. A universal topology is proposed for the utilization of both DM and CM in PA and other RF circuits. By assigning the millimeter-wave (mm-Wave) and sub-7 GHz bands to DM and CM paths, respectively, this PA achieves coverage of both 3.5 and 27 GHz bands with only one amplifying stage and consequently a compact layout. On the DM path, the proposed PA achieves a

${P}_{1{\text{dB}}}$

and

${\mathrm {PAE}}_{1{\text {dB}}}$

of 18.1 dBm and 32.4% at 24 GHz, while on the CM path, the corresponding performance is 15.3 dBm and 35.5% at 3.7 GHz. The proposed PA exhibits an adjacent channel leakage ratio (ACLR) of −25.9 dBc, an average power-added efficiency (PAE) of 17%, and an average output power of 12.4 dBm at −24.7 dB EVMRMS with a 64 QAM 200 MSym/s modulation signal at 26 GHz in DM. Similarly, with 256 QAM 50 MSym/s modulation at 3.6 GHz in CM, the PA demonstrates −35.6 dBc ACLR, 22.5% average PAE, and 10.7 dBm average power at −31.1 dB EVMRMS. Furthermore, measurements with two carriers at 24 and 3.7 GHz indicate that the PA has the potential for concurrent operation in both modes. The PA is fabricated in a 65 nm CMOS process with a core area of 0.32 mm2.

查看原文本刊更多论文

一种覆盖5G FR1和FR2的紧凑型双模双频CMOS功率放大器

本文介绍了一种能够覆盖第五代（5G） FR1和FR2频段的双模双频功率放大器（PA），用于5G用户设备驱动应用。在典型的差模（DM） CMOS PA中经常被忽略的共模（CM）路径被分析并用作覆盖第二频段的替代路径。提出了一种通用的拓扑结构，用于在PA和其他射频电路中同时使用DM和CM。通过将毫米波（mm-Wave）和sub-7 GHz频段分别分配给DM和CM路径，该PA仅使用一个放大级即可实现3.5 GHz和27 GHz频段的覆盖，因此布局紧凑。在DM路径下，该放大器在24 GHz时的性能分别为${P}_{1{\text{dB}} $和${\mathrm {PAE}}_{1{\text {dB}} $，分别为18.1 dBm和32.4%；在CM路径下，在3.7 GHz时的性能分别为15.3 dBm和35.5%。该放大器的相邻信道泄漏比（ACLR）为- 25.9 dBc，平均功率增加效率（PAE）为17%，在- 24.7 dB EVMRMS下，64 QAM调制信号为200 MSym/s时，平均输出功率为12.4 dBm。同样，在3.6 GHz调制信号为256 QAM调制信号为50 MSym/s时，放大器的ACLR为- 35.6 dBc，平均PAE为22.5%，平均功率为10.7 dBm，平均功率为- 31.1 dB EVMRMS。此外，对24 GHz和3.7 GHz两个载波的测量表明，PA具有在两种模式下同时工作的潜力。该PA采用65 nm CMOS工艺制造，核心面积为0.32 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.