{"title":"Design and prototype implementation of SMS based home automation system","authors":"H. Elkamchouchi, A. Elshafee","doi":"10.1109/ICEDSA.2012.6507788","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507788","url":null,"abstract":"This research aims to design and implement a cost effective but yet flexible, adaptable, and secure Home automation system. Paper presents design and prototype implementation of a basic home automation system based on SMS technology. The proposed system consists of two main components; the GSM modem, which is the communication interface between the home automation system and the user. GSM modem uses SMS technology to exchange data, and signaling between users and home automation system. The second module is the micro controller, which is the core of the home automation system, and acts as the bridge between the GSM network (the user) and sensors and actuators of home automation system. Sensors and actuators are directly connected to hardware micro controller through appropriate interface. System supports a wide range of home automation devices; power management components, security, multimedia applications, and telecommunication devices. System security based on user authentication of each SMS being exchange, as each SMS contains user name and password (beside comments). User can easily configure home automation system setting through RS232 protocol using a user friendly interface.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130440684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. W. Ben attouch, K. Koua, S. Panier, L. Arpin, L. Njejimana, H. Bouziri, M. Abidi, C. Paulin, R. Lecomte, J. Pratte, R. Fontaine
{"title":"A fully integrated pulse charge generator embedded in a 64-channel readout ASIC dedicated to a PET/CT detector module","authors":"M. W. Ben attouch, K. Koua, S. Panier, L. Arpin, L. Njejimana, H. Bouziri, M. Abidi, C. Paulin, R. Lecomte, J. Pratte, R. Fontaine","doi":"10.1109/ICEDSA.2012.6507781","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507781","url":null,"abstract":"The LabPETTM II is a new Positron Emission Tomography/Computed Tomography (PET/CT) scanner dedicated to small animals imaging under development at the Université de Sherbrooke. Its design requires nearly 37 000 detectors spread over a ring of 15 cm in diameter and 12 cm of axial length. This new scanner will break the submillimetric spatial resolution barrier in PET mode thanks to a new double 4 × 8 array of 1.1 × 1.1 mm2 avalanche photodiode (APD) coupled to an 8 × 8 LYSO crystal matrix. In order to readout individually each pixel of this detector block, a 64-channel Application Specified Integrated Circuit (ASIC) was developed based on Time-over-Threshold (ToT) technique. The ToT computations allow the extraction of both the energy and time of occurrence of PET signals. There are also adjustable gains located in each individual analog front-end chain that enables the detection of low energy X-ray photons (~ 42 keV) required for CT imaging mode. As a result of the complexity of this fully mixed-signal chip, calibrating the scanner and testing every single channel can be a cumbersome job on PCB using an external charge injector equipment. To facilitate those operations, a fully integrated pulse charge generator (PCG) was designed for the LabPET™ II ASIC. The PCG injects a 3-bit adjustable amount of charge in each channel in order to verify their impulse response and to calculate intrinsic energy and time resolution for both PET and CT modes. It can also be used to evaluate the analog front-end electronics noise, by knowing the electronic gain of each channel individually. The PCG can inject a charge that ranges from 35 fC to 56 fC by steps of 2.6 fC in PET mode and from 2.3 fC to 5.1 fC in steps of 0.3 fC at a rate of 1 kHz.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121562747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"UWB LNA with out-band interference rejection exploiting multistage matching circuit","authors":"H. Rezaei, E. Abiri, M. Salehi","doi":"10.1109/ICEDSA.2012.6507777","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507777","url":null,"abstract":"Two ultra-wideband (UWB) low-noise amplifiers (LNAs) with out-band interference rejection in front-end MOS device in triode mode are presented. In this scheme, a combination of coupled inductors is employed in the input stage of the proposed LNAs. While this stage has no DC power consumption, it is possible to easily reject out band interference. In order to increase power gain of the circuit two stages are added as an amplifier to each circuit. The first UWB LNA based on this new stage is proposed in 0.18 μm technology. Simulation results show S21, MAX and NFmin of 19.7 dB and 2.17 dB in 3.1-10.1 GHz, respectively. In order to improve the input reflection coefficient in high frequency band and extend bandwidth of LNA up to 10.6 GHz, new matching circuit based on band pass filter is utilized as well. Weak inversion and zero bias MOS is used in the proposed matching circuit. Second UWB LNA based on this new structure is proposed in 0.18 μm technology. Hence, simulation results show S21, MAX and NFmin of 19.4 dB and 2.35 dB in 3.1-10.6 GHz, respectively. Therefore, the proposed LNAs reject out-band interference over 2.4-2.5 GHz at least 17.4 dB and 18.2 dB, respectively, compared to maximum gain. This is while both circuits consume 10.93 mW DC power from 1.8 V supply voltage.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116958437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magnetic and electronic properties of be-doped low-temperature grown GaAs layers","authors":"M. A. Mohamed, P. T. Lam, N. Ōtsuka","doi":"10.1109/ICEDSA.2012.6507818","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507818","url":null,"abstract":"Magnetic and electron transport properties of Be-doped low-temperature-grown GaAs layers at low temperatures were studied. A nearly abrupt decrease of magnetization is observed at a temperature around 3.2 K where a discontinuous decrease in resistance is also observed. These observations are explained by cooperative transition of the electron states of ASGa defects. First-principal calculations of the electron state of an ASGa atom with a shallow acceptor Be atom show that at the transition, an ASGa+ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation. In addition, the displacement results in the generation of a hole in the valence band and enhance the electrical conduction.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129701418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical and optical properties of nanohybrid MEH-PPV: Niobium doped TiO2 thin films for organic photovoltaic cells","authors":"F. Zahid, M. Sarah, M. Musa, U. Noor, M. Rusop","doi":"10.1109/ICEDSA.2012.6507801","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507801","url":null,"abstract":"Titanium dioxide (TiO2) nanopowders of pure and niobium (Nb) doped TiO2 were synthesized using a sol gel immersed heater method. The nanopowders were then used as a filler in poly [2-methoxy-5-(2'-ethylhexyloxy)-p-phneylene] (MEH-PPV) to form hybrid organic-inorganic solar cells. In this study, the influence of TiO2 doped with different concentrations of niobium on the properties of nanohybrid MEH-PPV: TiO2 thin films have been investigated. Compared with a pristine thin film (undoped TiO2), the nanohybrid MEH-PPV: doped TiO2 thin films show an improvement in electrical photoconductivity with increase of niobium concentration. Optical analysis reveals that Nb-doped TiO2 shows a shift in absorption edge to longer wavelength compared to undoped TiO2 and exhibited strong absorption at wavelength Of 500 nm in visible and 340 nm in UV ranges respectively. The nanohybrid thin films have an average of 70% transmission in visible region and the energy band gap values using Tauc's formula have also been estimated.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129068628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mostafa Fedawy, Wael Fikry, A. Alhenawy, Hazem Hassan
{"title":"I-V characteristics model for ballistic Single Wall Carbon Nanotube Field Effect Transistors (SW-CNTFET)","authors":"Mostafa Fedawy, Wael Fikry, A. Alhenawy, Hazem Hassan","doi":"10.1109/ICEDSA.2012.6507775","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507775","url":null,"abstract":"Carbon Nanotube Field Effect Transistor (CNTFET) is considered one of the promising new transistors because it can avoid most of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) limitations. This paper presents a simple and accurate numerical model of coaxial gate Single Wall CNTFET (SW-CNTFET). The main feature of this model is that it can be used for low and high voltage applications, up to 2V. Furthermore, it can be used with CNT diameters varying from 1nm to 5nm. We apply the zone folding method to calculate the subband minima accurately. Our model has been compared with an exact numerical simulation. Our results show that when the gate voltage is lower than 1V the percentage error in saturation drain current is less than 1.5% but for high gate voltage (2V) the percentage of error is increased to 10%. Based on this model, the total induced carriers in the channel and the transfer characteristic curves are analyzed. Moreover, this work includes the effect of the diameter on the output characteristic curves.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130033017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tiong Ung Chiong, J. BoChao, Park, Ju Young, B. Sia, L. C. Meng, S. Loh
{"title":"Poly silicon resistance uniformity improvement by implant tuning","authors":"Tiong Ung Chiong, J. BoChao, Park, Ju Young, B. Sia, L. C. Meng, S. Loh","doi":"10.1109/ICEDSA.2012.6507817","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507817","url":null,"abstract":"The Viista80 High Current Series Ion Implanter improved the production throughput by a high power beam density Implant. However, the high dose rate implant created an undesirable variation in Poly Resistance within the wafers. The un-uniform poly resistor will lead to a bad device matching and particularly sensitive in analog circuit design. This paper introduces a Design of Experiments (DOE) tuning method on three Implant process parameters during the Poly Silicon Implant. Three process parameters that under study are Rotations, Beam Density and Drift Expand mode (DEX). The end result of this tuning shows a significant improvement in uniformity without affecting the overall average resistance value. A best combination tuning is developed base on three parameters settings on the DOE lot and result is verified by actual production lot.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115501537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a 4–6GHz wideband LNA in 0.13μm CMOS technology","authors":"S. Arshad, F. Zafar, Q. Wahab","doi":"10.1109/ICEDSA.2012.6507780","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507780","url":null,"abstract":"This paper presents the design of a single ended wideband LNA utilizing reactive elements at the input and output for impedance matching. It has been shown through simulations that the LNA architecture utilizes components similar to a narrowband design but achieves a much wider bandwidth with high gain and low noise figure. The single ended wideband LNA is based on 0.13-μm CMOS technology from IBM and simulated in Cadence SpectreRF. The LNA operates for frequencies approximately between 4-6 GHz. The maximum gain of the LNA is 29.6 dB and average NF is 2.6 dB. The linearity analysis shows the input referred PldB and IIP3 of -25.07 dBm and -13.47 dBm respectively. The two stage wideband LNA consumes only 13.9 mA from a 1.5 V supply. It shows good comparison with other LNAs designed for 4-6 GHz range with a much higher gain and smaller NF.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125341597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FPGA implementation of CCSDS BCH (63, 56) for satellite communication","authors":"S. Arunkumar, T. Kalaivani","doi":"10.1109/ICEDSA.2012.6507808","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507808","url":null,"abstract":"This paper considers the implementation of error detection and correction system for satellite communication on a FPGA (Field Programmable Gate Array) as per the protocols specified by CCSDS (Consultative Committee for Space Data Systems). BCH (Bose-Chaudhri-Hocquenghem) codes are cyclic codes that are capable of correcting multiple errors occurring in transmission. The implemented logic BCH (63, 56) is capable of correcting 1 bit error and detecting up to 2 bit errors. If the received command is not correctable, then erroneous authentication is prevented providing high probability of correct command execution. The algorithm is implemented in Cyclone II EP2C20F484C7 FPGA. Programming on a FPGA is easy, reliable and well suited for small sized satellites. The results show that the algorithm works quite well; any 2 bit error in any position of 63 bits was detected and 1 bit error was corrected. Simulation results in MATLAB and ModelSim are presented in detail.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124686493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Filamentary extension of the mem-con theory of memristance and its application to titanium dioxide sol-gel memristors","authors":"E. Gale, B. D. L. Costello, A. Adamatzky","doi":"10.1109/ICEDSA.2012.6507822","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507822","url":null,"abstract":"Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume, or a filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121505510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}