Design of a 4–6GHz wideband LNA in 0.13μm CMOS technology

Abstract

This paper presents the design of a single ended wideband LNA utilizing reactive elements at the input and output for impedance matching. It has been shown through simulations that the LNA architecture utilizes components similar to a narrowband design but achieves a much wider bandwidth with high gain and low noise figure. The single ended wideband LNA is based on 0.13-μm CMOS technology from IBM and simulated in Cadence SpectreRF. The LNA operates for frequencies approximately between 4-6 GHz. The maximum gain of the LNA is 29.6 dB and average NF is 2.6 dB. The linearity analysis shows the input referred PldB and IIP3 of -25.07 dBm and -13.47 dBm respectively. The two stage wideband LNA consumes only 13.9 mA from a 1.5 V supply. It shows good comparison with other LNAs designed for 4-6 GHz range with a much higher gain and smaller NF.