I-V characteristics model for ballistic Single Wall Carbon Nanotube Field Effect Transistors (SW-CNTFET)

Abstract

Carbon Nanotube Field Effect Transistor (CNTFET) is considered one of the promising new transistors because it can avoid most of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) limitations. This paper presents a simple and accurate numerical model of coaxial gate Single Wall CNTFET (SW-CNTFET). The main feature of this model is that it can be used for low and high voltage applications, up to 2V. Furthermore, it can be used with CNT diameters varying from 1nm to 5nm. We apply the zone folding method to calculate the subband minima accurately. Our model has been compared with an exact numerical simulation. Our results show that when the gate voltage is lower than 1V the percentage error in saturation drain current is less than 1.5% but for high gate voltage (2V) the percentage of error is increased to 10%. Based on this model, the total induced carriers in the channel and the transfer characteristic curves are analyzed. Moreover, this work includes the effect of the diameter on the output characteristic curves.