2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)最新文献

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System consideration on LTE and LTE-Advanced requirements for receiver channel filter LTE和LTE- advanced对接收机信道滤波器要求的系统考虑
Bassam Swaked, M. Hallal, L. Albasha
{"title":"System consideration on LTE and LTE-Advanced requirements for receiver channel filter","authors":"Bassam Swaked, M. Hallal, L. Albasha","doi":"10.1109/ICEDSA.2012.6507790","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507790","url":null,"abstract":"In this paper, the mobile receiver channel filter requirements as extracted from the 3GPP (3rd Generation Partnership Project) Release 10 Specifications for LTE-Advanced are investigated. A brief discussion will explain the choice of Direct Conversion receiver architecture in mapping the specifications in this study. The focus of this study is on Adjacent Channel Selectivity (ACS) and In-band Blocking requirements. The specification tables were translated into graphical diagrams that visualize the spectrum around the required channel frequency at Zero-IF. This illustrates channel filter frequency response which allows for easier design procedures.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123787477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Achievement of novel multicarrier CDMA with various modulation techniques 采用多种调制技术的新型多载波CDMA的实现
M. F. Ghanim, M. Abdullah
{"title":"Achievement of novel multicarrier CDMA with various modulation techniques","authors":"M. F. Ghanim, M. Abdullah","doi":"10.1109/ICEDSA.2012.6507789","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507789","url":null,"abstract":"Multicarrier code division multiple access (MC-CDMA) is favorable technique for future mobile network technology services. However, the high peak to average power ratio (PAPR) problem is one of the most important disadvantages of it. This research paper presents a Novel MC-CDMA system with fewer PAPR and converged performance from the original MC-CDMA. This paper includes all the required results and analysis of the designed system in order to estimate it and recognise the main advantages of it. The efficiency and throughput of the Novel MC-CDMA are calculated to show that the system has enough flexibility to be used in the wireless communication systems.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127083606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A low-power noncoherent BPSK demodulator for implantable medical devices 一种用于植入式医疗设备的低功率非相干BPSK解调器
B. Beheshti, M. Jalali
{"title":"A low-power noncoherent BPSK demodulator for implantable medical devices","authors":"B. Beheshti, M. Jalali","doi":"10.1109/ICEDSA.2012.6507797","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507797","url":null,"abstract":"A fully-integrated non-coherent BPSK demodulator intended for implantable medical devices is presented. Places of every 180 degrees phase transitions in BPSK modulated signals are recognized using active high-pass filters as negative and positive sharp pulses with adequate amplitude. In order to recover the initial base-band data, the sharp pulses are converted to digital level pulses using an op-amp based Schmitt trigger circuit. For a data rate of 1 Mbps and carrier frequency of 1 MHz, the proposed demodulator achieved a 100% data rate to carrier frequency ratio. Designed in a 0.18 μm standard CMOS technology, it consumes only 49 μA from a 1.8 V supply.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127792708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Parameters optimization of a heterojunction thin film solar cell to improve the conversion efficiency 异质结薄膜太阳能电池参数优化以提高转换效率
Y. Arafat, M. J. Ferdous, M. Hassan
{"title":"Parameters optimization of a heterojunction thin film solar cell to improve the conversion efficiency","authors":"Y. Arafat, M. J. Ferdous, M. Hassan","doi":"10.1109/ICEDSA.2012.6507814","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507814","url":null,"abstract":"Thin Film Solar Cell is a technology with great potential because of its low material consumption and relatively high efficiency. In this paper several techniques have been taken into consideration which can improve the efficiency of thin film solar cell like CIGS and ZnTeO. Simulations have been performed to optimize the parametric values that can greatly influence the efficiency of thin film solar cell. Effect of change of cell width, transmittance, recombination lifetime etc. on the conversion efficiency has been studied and optimized in MATLAB. It has been found that thin film solar cells with larger cell width can provide better efficiency only when the minority carrier mobility of the cell material crosses a critical value. If the mobility of the cell material is below this critical value, the efficiency of the cell decreases with increase in cell width.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132113535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Implementation of multiple linear regressions in lubricant degradation prediction algorithm 多元线性回归在润滑油退化预测算法中的实现
M. Idros, A. Manut, R. Yahya, S. Ali
{"title":"Implementation of multiple linear regressions in lubricant degradation prediction algorithm","authors":"M. Idros, A. Manut, R. Yahya, S. Ali","doi":"10.1109/ICEDSA.2012.6507795","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507795","url":null,"abstract":"This paper presents the development of the prediction algorithm of lubricant degradation based on Beer Lambert's transmittance theory by using Multiple Linear Regressions (MLR). Recently, an increasing amount of wasted lubricant has been due to the unnecessary changing of lubricant even though the lubricant still remains its lubrication behavior. Therefore, a condition based technique is introduced to monitor the degradation parameters in lubricating oil by using optical approach. This work focuses on Total Acid Number (TAN) that has been identified as the main parameter in determining the lifetime of lubricant and it occurred at band location from 1,050-1,250cm-1 and 1,700-1,730cm-1. The best input parameter has been identified for sensor development and signal processing. Then, the prediction model is used to validate the measured and the predicted value of degradation. The high correlation between the predicted and measured data shows the prediction algorithm can be used for prediction purposes efficiently.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"13 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113964465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Successful implementation of AES algorithm in hardware AES算法在硬件上的成功实现
R. Borhan, Raja Mohd Fuad Tengku Aziz
{"title":"Successful implementation of AES algorithm in hardware","authors":"R. Borhan, Raja Mohd Fuad Tengku Aziz","doi":"10.1109/ICEDSA.2012.6507810","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507810","url":null,"abstract":"Implementation of AES algorithm in hardware always found its bottleneck during the key scheduling process as it involves a lot of multiplication steps. This paper discusses how this bottleneck is identified, ways to overcome them and the implementation of the said algorithm with the improvement of the key scheduling result to a successful AES hardware implementation in Verilog Language. Efficiency is described using the clock speed it can manage after successful synthesis of the said AES verilog codes.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124930566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
40nm CMOS DC-DC PWM boost converter for high power audio in mobile application 40nm CMOS DC-DC PWM升压转换器,用于移动应用中的高功率音频
F. Neri, F. Di Fazio, S. Lonka, S. Somayaiula, L. Cimaz, S. Cahu, R. Pantaleon
{"title":"40nm CMOS DC-DC PWM boost converter for high power audio in mobile application","authors":"F. Neri, F. Di Fazio, S. Lonka, S. Somayaiula, L. Cimaz, S. Cahu, R. Pantaleon","doi":"10.1109/ICEDSA.2012.6507823","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507823","url":null,"abstract":"On-chip boost DC-DC converter used for high power audio ICs for mobile application is presented in this paper. For special systematic requirement, a combination of fixed-frequency pulse-width modulation (PWM) and hysteretic PWM control scheme is used. This converter is designed with a 40nm CMOS process and experimental results show that, the converter can operate with supply voltage from 2.7 to 4.2 V, which is suitable for single-cell lithium-ion rechargeable battery supply application, and boost voltage up to 4.9 V for delivering 1 Wrms audio power output. The output ripple voltage is about 45 mV with 20 μF off-chip capacitors and 2.2 μH off-chip inductor. The power efficiency is over 82% for lWrms audio application while over 75% for load currents up to 900mA, and maximum to 88% for 200mA load current.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128203478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
40 nm CMOS white LED driver for mobile display application 用于移动显示应用的40纳米CMOS白光LED驱动器
A. dSouza, A. Seedher, S. Somayajula, C. Martelli, R. Pantaleoni, F. Neri
{"title":"40 nm CMOS white LED driver for mobile display application","authors":"A. dSouza, A. Seedher, S. Somayajula, C. Martelli, R. Pantaleoni, F. Neri","doi":"10.1109/ICEDSA.2012.6507824","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507824","url":null,"abstract":"An on-chip boost DC-DC converter used in White LED (WLED) drivers & controller ICs for mobile applications is presented in this paper. The boost controller provides a programmable average current to a string of up to six LEDs in series A Constant On-Time (COT) valley-current-mode control loop sets the duty cycle by controlling the off period. This converter is designed with a 40 nm standard CMOS process. Experimental results show that the converter can operate with supply voltage from 2.5 V to 4.3 V, which is suitable for single-cell lithium-ion rechargeable battery supply applications, and boost input voltage up to 21 V for lighting WLED displays. The output current can be programmed from 0.5 mA to 21 mA with a 100 nF off-chip capacitor and a 10 μH off-chip inductor. The power efficiency is greater than 78% for a 21.5 mA load current, and achieves 84 % at about 3.5 V battery voltage.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121568125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A novel 3-TFT AMOLED pixel driver for threshold voltage shift compensation 一种用于阈值电压移位补偿的新颖3-TFT AMOLED像素驱动器
M. Amiri, A. R. Zamir, S. Shahin, S. Ashtiani
{"title":"A novel 3-TFT AMOLED pixel driver for threshold voltage shift compensation","authors":"M. Amiri, A. R. Zamir, S. Shahin, S. Ashtiani","doi":"10.1109/ICEDSA.2012.6507779","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507779","url":null,"abstract":"A new voltage-programmed pixel using amorphous silicon (a-Si) thin film transistors (TFTs) for active matrix organic light-emitting diodes (AMOLEDs) and its external driver is presented. The proposed pixel circuit is a 3- TFT structure with only 2 controlling signals. This pixel structure along with its driver compensates for the shift in TFTs threshold voltage and reduces current sensitivity of OLED to W/L of TFTs.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132609704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A UHF micro-power CMOS rectifier using a novel diode connected CMOS transistor for micro-sensor and RFID applications 一种采用新型二极管连接CMOS晶体管的超高频微功率CMOS整流器,用于微传感器和RFID应用
M. Shokrani, M. Hamidon, Mojtaba Khoddam, Vali Najafi
{"title":"A UHF micro-power CMOS rectifier using a novel diode connected CMOS transistor for micro-sensor and RFID applications","authors":"M. Shokrani, M. Hamidon, Mojtaba Khoddam, Vali Najafi","doi":"10.1109/ICEDSA.2012.6507805","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507805","url":null,"abstract":"The design strategy and efficiency optimization of UHF micro-power rectifiers using a novel diode connected MOS transistor is presented. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduce the threshold voltage and leakage current in compare to conventional diode connected transistors. Using the proposed diode in typical rectifiers makes a significant improvement in output voltage and current therefore the efficiency is increased comparing to the same rectifier architectures using conventional diodes. Also a design procedure for efficiency optimization is presented and a superposition method is used to optimize the performance of multiple output rectifiers. Finally a five stage double output rectifier is designed based on the proposed optimization method. Simulation results verified the improvement in efficiency and area. All circuits are designed in a standard 0.18um CMOS Technology.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125669446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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