2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)最新文献_第2页

Performance study on implementation of DVB-S2 low density parity check codes on additive white Gaussian noise channel and Rayleigh fading channel DVB-S2低密度奇偶校验码在加性高斯白噪声信道和瑞利衰落信道上实现的性能研究

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507791

H. Hussien, K. Shehata, M. Khedr, S. Hareth

引用次数: 6

Hybrid conjugated polymer/quantum dots thin films for electronics application 电子应用的杂化共轭聚合物/量子点薄膜

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507783

F. H. Naning, S. Malik, F. L. Supian

引用次数: 1

Very low bandgap voltage reference with high PSRR enhancement stage implemented in 90nm CMOS process technology for LDO application 超低带隙基准电压，高PSRR增强级，采用90nm CMOS工艺技术实现LDO应用

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507800

K. R. Francisco, J. Hora

引用次数: 12

A low power 2.4-GHz current reuse VCO for low power miniaturized transceiver system 一种用于低功耗小型化收发器系统的低功耗2.4 ghz电流复用压控振荡器

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507804

M. R. Basar, F. Malek, K. Juni, M. I. M. Saleh, M. S. Idris

{"title":"A low power 2.4-GHz current reuse VCO for low power miniaturized transceiver system","authors":"M. R. Basar, F. Malek, K. Juni, M. I. M. Saleh, M. S. Idris","doi":"10.1109/ICEDSA.2012.6507804","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507804","url":null,"abstract":"The explosive growth of short range wireless communication systems has lead to highly demand of compact radio frequency (RF) circuit with low power design. As voltage control oscillator (VCO) is the core block of RF systems, this paper presents a low power and highly miniaturized current reuse 2.45 GHz VCO. The proposed VCO is designed with the staking switch two series transistors using current reuse topology and inversion-mode of PMOS varactor tank. The proposed VCO consists a single on chip inductor and four MOS transistors that simplifies the VCO circuit and shrink the chip area remarkably. The proposed VCO is designed with 0.18-μm CMOS process. At 1.2 V DC supply, the proposed VCO draws only 315 μA current resulted to the VCO operate at ultra low power (0.38 mW). Over the tuning range the proposed VCO has the phase noise of -127 dBc/Hz at 1 MHz offset. In order to eliminate additional matching voltage circuit, the tuning voltage (Vtune) is kept similar to the DC voltage supply for 2.45 GHz ISM band applications. The performance of the proposed VCO show the excellent optimization for low power of compact transceiver system.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"125 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133557430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Self consistent simulation of C-V characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects 结合QM效应的双栅极SOI柔性场效应管的C-V特性和弹道性能自一致仿真

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507819

Z. Al Azim, N. Chowdhury, Iftikhar Ahmad Niaz, M. H. Alam, I. Ahmed, D. M. Quazi

引用次数: 0

A study of SIP trunk security and challenges 研究了SIP中继的安全性及面临的挑战

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507806

A. Jaber, S. Manickam, S. Ramdas

引用次数: 4

2-π Crosstalk noise model for deep submicron VLSI global RC interconnects 深亚微米VLSI全局RC互连的2 π串扰噪声模型

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507803

V. Maheshwari, Anushree, S. Mazumdar, R. Kar, D. Mandal, A. Bhattacharjee

引用次数: 1

A study of signed multipliers on FPGAs fpga上符号乘法器的研究

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507811

Mohamed Aly, Ahmed Sayed

引用次数: 8

Electroluminescence and photoluminescence properties of porous silicon nanostructures with optimum etching time of photo-electrochemical anodization 多孔硅纳米结构在最佳光电氧化蚀刻时间下的电致发光和光致发光特性

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507774

M. A. Zubaidab, M. Rusop, S. Abdullah

{"title":"Electroluminescence and photoluminescence properties of porous silicon nanostructures with optimum etching time of photo-electrochemical anodization","authors":"M. A. Zubaidab, M. Rusop, S. Abdullah","doi":"10.1109/ICEDSA.2012.6507774","DOIUrl":"https://doi.org/10.1109/ICEDSA.2012.6507774","url":null,"abstract":"Porous silicon nanostructures (PSiNs) has attracted attention as a promising material for optoelectronics applications. For this experiment, we present measurements of photoluminescence and electroluminescence of PSiNs. The study of the electrical properties of this material due to its potential as a novel porous silicon based devices. Objective of this experiment is to determine the electroluminescence of PSiNs. PSiNs samples were prepared by photo-electrochemical anodization using p-type silicon substrate. For the formation of PSiNs, a fixed current density (J=20 mA/cm2), was applied for the variety of etching time (10, 20, 30, 40 and 50 minutes). The light emission can be observed at visible range. Effective EL spectrum will be observed with its maximum intensity at ~655 nm (sample of 30 minutes), which is similar to its PL spectrum at ~675 nm. PSiNs is very promising material for light-emitting diode (LED) application. Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be future flat screen display devices and one of the high potential demands of devices.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130054414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

SASC: A hardware string alignment coprocessor for stereo correspondence 用于立体声通信的硬件字符串对齐协处理器

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI: 10.1109/ICEDSA.2012.6507816

M. Vigliar, M. Fratello, L. Puglia, G. Raiconi

引用次数: 3