电子应用的杂化共轭聚合物/量子点薄膜

2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA) Pub Date : 2012-11-01 DOI:10.1109/ICEDSA.2012.6507783

F. H. Naning, S. Malik, F. L. Supian

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引用次数: 1

摘要

在恒表面压力下，采用角度提升沉积技术在ITO涂层玻璃基板上沉积了13层P3HT/硬脂酸薄膜。采用气体暴露法在P3HT/SA基体中嵌入半导体纳米颗粒。复合材料P3HT/SA的等温线显示出硬脂酸小分子与长链聚合物结合的独特趋势。UV-Vis结果显示P3HT/SA基质间存在CdS量子点。将气体暴露前后的光谱相减，CdS峰在420 nm处，说明产生的量子点尺寸在4nm左右。

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Hybrid conjugated polymer/quantum dots thin films for electronics application

Thirteen layers of P3HT/stearic acid films have been deposited using angle lifting deposition technique onto ITO coated glass substrate at constant surface pressure. Gas exposure method was employed to embed semiconducting nanoparticles in the P3HT/SA matrixes. The isotherm of composite P3HT/SA shows a unique trend combination of small molecules of stearic acid and long chain polymer. UV-Vis result revealed the presence of CdS quantum dots in between P3HT/SA matrices. After subtracting the spectra before and after gas exposure, it was found that the CdS peak is at 420 nm, indicating the size of quantum dots created is around 4nm.

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2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)

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