Self consistent simulation of C-V characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects

Capacitance-Voltage (C-V) & Ballistic Current-Voltage (I-V) characteristics of Double Gate (DG) Silicon-on-Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger-Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.