Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)最新文献

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A computation of H-plane waveguide circulator by a finite element method h面波导环行器的有限元计算
A. Bruse
{"title":"A computation of H-plane waveguide circulator by a finite element method","authors":"A. Bruse","doi":"10.1109/MIAME.1999.827894","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827894","url":null,"abstract":"In the article the computation of main characteristics of ferrite Y-circulator by finite element method is presented.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133838896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin-film comb thermal converter: influence of shunt effect of thermopile on high-frequency current distribution 薄膜梳状热交换器:热电堆分流效应对高频电流分布的影响
A. Kozlov
{"title":"Thin-film comb thermal converter: influence of shunt effect of thermopile on high-frequency current distribution","authors":"A. Kozlov","doi":"10.1109/MIAME.1999.827837","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827837","url":null,"abstract":"Thin-film comb thermal converters are widely used for obtaining mean square values of alternating current or voltage and for measuring a power of electrical signals having various forms. At the present time reliable data about the operation of these thermal converters on high-frequencies are absent. In this paper the analytical model allowing one to determine the influence of the shunt effect of the thermopile on the high frequency current distribution in the structure of the thin-film comb thermal converter is presented. The structure of the thin-film comb thermal converter under consideration is shown. In this structure hot thermojunctions of the thermopile are placed near the heater. Such disposition of the hot thermojunctions permits the value of the operation frequency of the thermal converter to be increased to 500 to 600 MHz.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116547260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gas discharger generators of ultra-frequency a metal-bearing plasma to etching of piezoelectrics 超频气体放电发生器,含金属等离子体刻蚀压电材料
L.N. Orlikov, N. L. Orlikov, S. Shandarov
{"title":"Gas discharger generators of ultra-frequency a metal-bearing plasma to etching of piezoelectrics","authors":"L.N. Orlikov, N. L. Orlikov, S. Shandarov","doi":"10.1109/MIAME.1999.827841","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827841","url":null,"abstract":"The etching of lithium niobate in a high-voltage glow discharge with voltage of 10 KV is discussed. Pulsed supply of metal vapors into the etching chamber causes the discharge resignation and the generation of high frequency oscillations. An inductive-capacitate composition in a discharge circuit generates frequency 5 MHz. This helps to remove discharge from the piezoelectric surface and to increase the etching speed to 5 mcm/h.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128960987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Artificial neural networks for planar waveguide junctions 平面波导结的人工神经网络
N. Chouaib, M. Guglielmi, V.F. Boria
{"title":"Artificial neural networks for planar waveguide junctions","authors":"N. Chouaib, M. Guglielmi, V.F. Boria","doi":"10.1109/MIAME.1999.827825","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827825","url":null,"abstract":"In recent years, artificial neural networks (ANNs) have been introduced as fast and accurate tools for modeling simulating and optimizing a great variety of microwave structures. In this paper we propose a multilayer perceptron neural network (MLPNN) for modelling planar waveguide junctions involving waveguides with arbitrary shapes and with variable geometrical features. The artificial neural network has been used to represent the modal spectrum of the arbitrary waveguides, and the coupling-integrals between such waveguides and standard rectangular waveguides, as a function of the variable geometrical feature(s). The training data set has been obtained,using an accurate but slow electromagnetic simulation algorithm. The result obtained is shown to be a very accurate and extremely, efficient representation of the waveguide junction.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121651253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurements of electromagnetic properties of dielectric materials in the microwave range 微波范围内介电材料电磁特性的测量
V.F. Matveychuk, S. Sibirtsev
{"title":"Measurements of electromagnetic properties of dielectric materials in the microwave range","authors":"V.F. Matveychuk, S. Sibirtsev","doi":"10.1109/MIAME.1999.827887","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827887","url":null,"abstract":"In this work the theory, analysis and a practical implementation of a method of measurement of relative dielectric permeability /spl epsiv/*=/spl epsi/-i/spl middot//spl epsiv/\" of materials in a frequency range from 0.5 up to 25 GHz is considered. Values of /spl epsi/ were measured in a range from 2 up to 200 relative units and values of dielectric losses tg/spl delta/ (/spl epsiv/\"//spl epsi/) in a range from 5/spl middot/10/sup -5/ up to 2/spl middot/10/sup -2/.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"2001 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123891400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A method for characterizing resistive and dielectric materials in VHF using the detection by integration principle 一种利用积分检测原理对甚高频中电阻性和介电性材料进行表征的方法
H. Halheit, B. Haraoubia
{"title":"A method for characterizing resistive and dielectric materials in VHF using the detection by integration principle","authors":"H. Halheit, B. Haraoubia","doi":"10.1109/MIAME.1999.827802","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827802","url":null,"abstract":"This paper describes a simple and new process for characterization of resistive and dielectric materials in VHF range. We have developed a computer program which permits to simulate the analogical function used in detection by integration measurement. The obtained results show a good measurement accuracy comparing to the analogical method.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117083967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimal frequency in acoustic location 声学定位的最佳频率
V. Nikitin, A. Yakovlev
{"title":"Optimal frequency in acoustic location","authors":"V. Nikitin, A. Yakovlev","doi":"10.1109/MIAME.1999.827875","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827875","url":null,"abstract":"The choice of operating frequency in acoustic location is highly problematic and is found by compromise. From the one side, the frequency should be as higher as possible so that to achieve the high accuracy and directivity. From the other side, the lower is the frequency, the weaker are oscillations in the medium and the more is the sonar range, the lower is the thermal noise level. In this paper the optimal frequency for location in a water medium is found in a marine and river medium. As an optimal criterion for defining f/sub opt/ we took the ratio of intensity of echo signal to the sum of noise intensity and reverberation. We received a general ratio and formulas for typical instances.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130940964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of harmonics level in microwave varactor mixer 微波变容混频器谐波电平的计算
A. Sorkin
{"title":"Calculation of harmonics level in microwave varactor mixer","authors":"A. Sorkin","doi":"10.1109/MIAME.1999.827810","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827810","url":null,"abstract":"Varactor mixers are used as converters in transmitters. Energy calculation of powerful varactor converters of frequency is designed sufficiently well. On the mixer two signals are given-carrier frequency and modulating frequency.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126577668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The critical concentrations of the substituting metal on the phase diagram La/sub 2-x/(Ca,Sr,Ba)/sub x/CuO/sub 4/ 取代金属在相图La/sub - 2-x/(Ca,Sr,Ba)/sub -x/ CuO/sub - 4/上的临界浓度
N. Firsov, I. Novikov, R. Khusnutdinov
{"title":"The critical concentrations of the substituting metal on the phase diagram La/sub 2-x/(Ca,Sr,Ba)/sub x/CuO/sub 4/","authors":"N. Firsov, I. Novikov, R. Khusnutdinov","doi":"10.1109/MIAME.1999.827856","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827856","url":null,"abstract":"The results of critical concentration calculations of the high T/sub c/ compound La/sub 2-x/(Ca,Sr,Ba)/sub x/CuO/sub 4/ are presented. The calculation was obtained by the analysis of the location model of the substituting metal in the crystal structure of this compound.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124641470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Volumetric integral equations for non-uniform impurities in the rectangular waveguide 矩形波导中非均匀杂质的体积积分方程
M. Davidovich, N. F. Popova
{"title":"Volumetric integral equations for non-uniform impurities in the rectangular waveguide","authors":"M. Davidovich, N. F. Popova","doi":"10.1109/MIAME.1999.827835","DOIUrl":"https://doi.org/10.1109/MIAME.1999.827835","url":null,"abstract":"Surface Integral Equations (SIEs) and Volumetric Integral Equations (VIEs) are widely used for solutions of electromagnetic boundary problems. The SIEs are convenient because they reduce the dimension of a problem (three-dimensional problems are reduced to two-dimensional SIEs) and allow all boundary and radiating conditions to be satisfied. Both the SIEs with the kernels as single- and double-layered potentials and the VIEs versus the electrical field distribution in the volume of an impurity, are known and have been used. In this paper the VIEs without surface integrals are developed for arbitrary dielectric and magnetic inclusions in the Rectangular Waveguide (RW). The goal of the paper is to elaborate the algorithms for solutions of boundary problems with arbitrary shaped inclusions and with arbitrary tensor permittivities and permeabilities (including bianisotropic ones). The method is based on piece-wise field approximations.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125273660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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