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Thermal Management of GaAs/AlGaAs VCSELs by Optimizing MHCG and DBR Hybrid Reflectors 利用MHCG和DBR混合反射器优化GaAs/AlGaAs VCSELs的热管理
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152422
Hassan Hooshdar Rostami, V. Ahmadi, S. Pahlavan
{"title":"Thermal Management of GaAs/AlGaAs VCSELs by Optimizing MHCG and DBR Hybrid Reflectors","authors":"Hassan Hooshdar Rostami, V. Ahmadi, S. Pahlavan","doi":"10.1109/IICM57986.2022.10152422","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152422","url":null,"abstract":"In this paper, a self-consistent three-dimensional finite element method is used for the electro-thermal analysis of a VCSEL structure with a hybrid reflector based on monolithic high-contrast gratings (MHCG). A GaAs/AlGaAs VCSEL with a lasing wavelength of 980 nm, diameter of 31 µm and an aperture diameter of 16.5 µm with an MHCG and DBR hybrid reflector with reflectivity of 99.99% is studied, and the temperature distribution in the device is obtained. Also, the impact of utilizing MHCG in the reflector on the temperature peak is shown. The proposed structure is compared with a conventional VCSEL, and it is demonstrated that utilizing a hybrid reflector reduces the temperature peak by up to 8K. The effect of the MHCG duty cycle and thickness on VCSEL's electro-thermal characteristics is also investigated.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124382425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and fabrication of an optical sensor for glucose measurement in a microfluidic chip 微流控芯片中葡萄糖测量光学传感器的设计与制造
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152402
Roghayeh Fathpour, A. Pourmand
{"title":"Design and fabrication of an optical sensor for glucose measurement in a microfluidic chip","authors":"Roghayeh Fathpour, A. Pourmand","doi":"10.1109/IICM57986.2022.10152402","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152402","url":null,"abstract":"This paper describes the design and fabrication of an optical glucose sensing system in a microfluidic chip on a PDMS substrate. We studied the potential of the near infrared wavelength, 940 nm as glucose sensor based on Beer lambert's law. This sensor consists of a 940nm IR-LED as a light source and a PIN photodiode that is sensitive to that wavelength. The detection of glucose was performed by aqueous glucose solutions in the clinical concentration range in a PDMS-based microfluidic chip. The relationship between system output voltage and glucose concentration was studied in transmission spectroscopy. For glucose solutions ranging from 60 to 300 mg/dL the output voltages were approximately changed linearly from 1211 to 1129 mv. Based on the promising results obtained from the experiments, this sensor has the potential for glucose detection in complex physiological environments.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121955794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of linearity indices in analog/RF circuits using EKV model and comparing the results in three different CMOS processes 利用EKV模型研究模拟/射频电路的线性度指标，并比较三种不同CMOS工艺的结果
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152418
Gholamreza Khademevatan, A. Jalali
{"title":"Study of linearity indices in analog/RF circuits using EKV model and comparing the results in three different CMOS processes","authors":"Gholamreza Khademevatan, A. Jalali","doi":"10.1109/IICM57986.2022.10152418","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152418","url":null,"abstract":"The paper reports on a reliable design methodology for linearity of analog/RF circuits based on EKV model and its main parameter, the inversion coefficient (IC). In this procedure, the linearity value is studied in all regions from WI to SI. Two important linearity indices, AldB and AIP3, are investigated for single-stage and two stage differential amplifiers and finally the optimum value of inversion coefficient is calculated for biasing of circuit devices.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"18 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113935455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Analysis of Mid-Wave Optical Receiver based on Barrier Upside-down nBn Photodetectors for Free Space Optical Wireless Communication Systems 自由空间光通信系统中基于位垒倒置nBn光电探测器的中波光接收机性能分析
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152301
Maryam Shaveisi, P. Aliparast
{"title":"Performance Analysis of Mid-Wave Optical Receiver based on Barrier Upside-down nBn Photodetectors for Free Space Optical Wireless Communication Systems","authors":"Maryam Shaveisi, P. Aliparast","doi":"10.1109/IICM57986.2022.10152301","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152301","url":null,"abstract":"Nowadays, Infrared Optical Detectors (IOD) play a very important role in the receivers of optical communication systems. The pin and APD photo-detectors are popular photo-detectors that act as receivers of optical signals. In this paper, we introduce a new structure called barrier upside-down nBn photo-detector (BU-nBn PD) for using in Free Space Optical Wireless Communication (FSOWC) systems which has a high capability. In the proposed structure, the absorber layer is selected from InAsSb (xsb=0.19) compound semiconductor, because it has a higher cutoff wavelength than the conventional commercially nBn photo-detectors with InAsSb (xsb=0.09). The simulation results indicate that the dark current of this photo-detector is 10−10A/cm2 at 150K. Also, noise and signal-to-noise ratio (SNR) analysis are investigated which are two important and influencing factors in designing this device as a FSOWC receiver. In the proposed photo-detector, the noise and noise-equivalent-power (NEP) are 5.73×10−13 (AHz−1/2) and 6.24×10−13 (WHz1/2), respectively, at bias voltage of 0.5 V and 150 K.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133785492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Fast Power-Efficient Cascode Level-Shifter 一种新型快速高效级联电平转换器
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152311
A. Zanjani, M. Jalali
{"title":"A Novel Fast Power-Efficient Cascode Level-Shifter","authors":"A. Zanjani, M. Jalali","doi":"10.1109/IICM57986.2022.10152311","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152311","url":null,"abstract":"The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115797647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A photo sensor with one-direction memristive behavior based on silicon-oxide 一种基于氧化硅的单向记忆性光传感器
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152441
P. Ghasemi, M. Sharifi
{"title":"A photo sensor with one-direction memristive behavior based on silicon-oxide","authors":"P. Ghasemi, M. Sharifi","doi":"10.1109/IICM57986.2022.10152441","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152441","url":null,"abstract":"Here, we proposed a nonlinear, silicon-based, and photosensitive memristor structure with oxide as the active layer. A three-layer sandwiched Metal/SiO2/n-Si structure was constructed using a thin SiO2 grown layer on n-Si. Two different electrodes, colloidal silver and sputtered copper, were studied as ion sources, and their behavior was examined. The current-voltage and pulse response characteristics were considered as the main outcomes under dark and light conditions. Set and reset threshold voltages of 5 V and -11 V were obtained with a memory window near 5 V by a sweeping voltage of ±12 V. Colloidal silver-based samples demonstrated a synaptic plasticity change (ON/OFF ratios up to 310). In contrast, in the Cu sputtered samples, nearly no synaptic plasticity was observed. Also, the device exhibited a resistivity change of about 29% in response to optical pulses in the visible spectrum range. The fabricated silver-based devices act like a nonlinear one-direction memristor and a photosensor based on the ions migration inside the SiO2 layer with spike-timing-dependent plasticity characters.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121067611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Skin Effect Analysis and Comparison for Carbon-Based Interconnects at 5nm Technology Node 5nm工艺节点碳基互连的趋肤效应分析与比较
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152304
S. Hamedani, M. H. Moaiyeri
{"title":"Skin Effect Analysis and Comparison for Carbon-Based Interconnects at 5nm Technology Node","authors":"S. Hamedani, M. H. Moaiyeri","doi":"10.1109/IICM57986.2022.10152304","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152304","url":null,"abstract":"The impacts of skin effects on the performance of carbon-based interconnects have been analyzed and compared at the 5 nm technology node in this paper. According to the results, in the range of 20 GHz frequency, the skin depths of multilayer graphene nanoribbon (MLGNR) global interconnects are on average 52% greater than multiwall carbon nanotube (MWCNT) wires at 5nm technology node. Our simulations demonstrate that in the presence of skin effect at high frequencies, MLGNR interconnects lead to lower delay and power consumption than their MWCNT counterparts. According to the results, the delays of MLGNR interconnects are, on average, 46% lower than those of MWCNTs at the 5 nm technology node. Moreover, power consumptions of MLGNR are, on average, 3% lower than MWCNT in the presence of skin effects. Additionally, the results of time domain analysis show that the noise amplitude at the end of the MLGNR victim line is smaller than that of the MWCNT interconnect at 10GHz frequency.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114420241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Histogram-Based Digital Background Calibration Technique for Pipelined A/D Converters 基于直方图的流水线A/D转换器数字背景校正技术
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152348
Saeedeh Yahyaee, M. Yavari
{"title":"A Histogram-Based Digital Background Calibration Technique for Pipelined A/D Converters","authors":"Saeedeh Yahyaee, M. Yavari","doi":"10.1109/IICM57986.2022.10152348","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152348","url":null,"abstract":"This paper presents a digital background calibration technique for pipelined analog-to-digital converters (ADCs) to correct the gain error due to the capacitors mismatch and finite dc gain and nonlinearity error owing to the residue amplifiers. The proposed calibration scheme corrects these errors by using the histogram-based method. To calculate the linear and nonlinear coefficients, the threshold level of sub-ADC is changed and based on specifications of residue characteristic and output histogram, the first and third order coefficients are extracted. This method does not require any calibration signal or additional analog hardware and relaxes the performance requirements of the analog building circuits. Circuit level simulation results of a 12-bit 100 MS/s pipelined ADC in a 65 nm CMOS technology show that the proposed calibration scheme improves signal-to-noise and distortion (SNDR) and spurious free dynamic range (SFDR) from 30.4 dB and 31.8 dB to 69.3 dB and 81.2 dB, respectively.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127783201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Performance MWIR InAsSb-based nBn Photodetectors 高性能MWIR inassb基nBn光电探测器
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152322
Maryam Shaveisi, P. Aliparast
{"title":"High Performance MWIR InAsSb-based nBn Photodetectors","authors":"Maryam Shaveisi, P. Aliparast","doi":"10.1109/IICM57986.2022.10152322","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152322","url":null,"abstract":"Today with increasing the operating temperatures, obtaining the ability to reduce the dark current of MWIR photodetectors is obligated. In this paper, structures are considered based on InAsSb with Sb composition, xSb=0.17 as absorber layers with various barrier semiconductors to indicate the importance of using these nBnn structures in medical applications. We evaluate the impressive physical factors such as doping density of barrier layer and the applied bias voltage on the performance of these photodetectors to achieve two structures with desirable physical properties. Detailed analysis of barrier doping density confirms that n- type doping density ND<1xl014 cm−3 leads to valence band offset of less than 20 meV and makes it possible to estimate the high sensitivity of the proposed nBnn photodetectors. Also, the simulation results show that both structures have 92% and 99%, respectively reduction in dark current compared to the previous best structure.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127285890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Tunable Impedance Matching Network Based on MEMS Cantilever Switches 基于MEMS悬臂开关的可调谐阻抗匹配网络设计
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152405
Fazel Ziraksaz, A. Hassanzadeh
{"title":"Design of a Tunable Impedance Matching Network Based on MEMS Cantilever Switches","authors":"Fazel Ziraksaz, A. Hassanzadeh","doi":"10.1109/IICM57986.2022.10152405","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152405","url":null,"abstract":"This paper presents the design and fabrication of a cantilever MEMS switch for reconfigurable RF applications. The switch can be used in applications with variable antenna impedance or center frequency determination structure to adjust the impedance matching. Also, this paper offers a tunable Impedance Matching Network (TIMN) for 2.6GHz and 3.5GHz frequencies using cantilever MEMS switches. The proposed structure uses minimum number of switches compared to similar works. S(11) is less than -10dB in the frequency range of 2.23GHz to 3.29GHz and 3GHz to 4.41GHz. Electrical and mechanical simulations are performed in Advanced Design System (ADS) and COMSOL simulation software, respectively. Simulation results indicate the proposed structure can adjust different frequencies for TIMN using MEMS cantilever switches.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131415658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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