利用EKV模型研究模拟/射频电路的线性度指标,并比较三种不同CMOS工艺的结果

Gholamreza Khademevatan, A. Jalali
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引用次数: 0

摘要

本文报道了一种基于EKV模型及其主要参数反转系数(IC)的可靠的模拟/射频电路线性度设计方法。在这个过程中,研究了从WI到SI的所有区域的线性值。研究了单级和双级差分放大器的两个重要线性度指标AldB和AIP3,最后计算了电路器件偏置的最佳反转系数值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of linearity indices in analog/RF circuits using EKV model and comparing the results in three different CMOS processes
The paper reports on a reliable design methodology for linearity of analog/RF circuits based on EKV model and its main parameter, the inversion coefficient (IC). In this procedure, the linearity value is studied in all regions from WI to SI. Two important linearity indices, AldB and AIP3, are investigated for single-stage and two stage differential amplifiers and finally the optimum value of inversion coefficient is calculated for biasing of circuit devices.
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