一种新型快速高效级联电平转换器

A. Zanjani, M. Jalali
{"title":"一种新型快速高效级联电平转换器","authors":"A. Zanjani, M. Jalali","doi":"10.1109/IICM57986.2022.10152311","DOIUrl":null,"url":null,"abstract":"The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Fast Power-Efficient Cascode Level-Shifter\",\"authors\":\"A. Zanjani, M. Jalali\",\"doi\":\"10.1109/IICM57986.2022.10152311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.\",\"PeriodicalId\":131546,\"journal\":{\"name\":\"2022 Iranian International Conference on Microelectronics (IICM)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Iranian International Conference on Microelectronics (IICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IICM57986.2022.10152311\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Iranian International Conference on Microelectronics (IICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICM57986.2022.10152311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

电压标度技术被广泛应用于数字系统中以解决功率问题。在这些系统中,电平移位器(LS)对于在不同电压域之间建立坚实的界面是必不可少的。本文提出了一种快速功率和面积高效的超低电压电平移位器(LS),它有助于从深亚阈值区域到超阈值区域的大范围转换。结合交叉耦合和电流镜结构的优点,本文提出的LS具有更好的性能。此外,分输入逆变器和限流器技术有助于有效地降低静态功率。假设在1MHz频率下从400 mV转换为1.2 V,仿真结果表明,与之前的工作相比,所提出的LS的功耗降低了66%,转换速度提高了13%左右。在65nm标准CMOS工艺中实现,所提出的SA由9个晶体管组成,占地约6.1 um x 18.2 um的硅面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Fast Power-Efficient Cascode Level-Shifter
The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信