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Design and Implementation of a Low Power Time-to-Digital Converter for Pixel Application 用于像素应用的低功耗时间-数字转换器的设计与实现
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152375
Mohammad Hassan Pass, S. Sayedi, Seyed Amir Reza Ahmadi Mehr
{"title":"Design and Implementation of a Low Power Time-to-Digital Converter for Pixel Application","authors":"Mohammad Hassan Pass, S. Sayedi, Seyed Amir Reza Ahmadi Mehr","doi":"10.1109/IICM57986.2022.10152375","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152375","url":null,"abstract":"In this paper, a structure for time-to-digital converter (TDC) is proposed. In the structure, three measuring stages with different accuracies are used to reach a high dynamic range. Also in the design, a gated ring oscillator is used to reduce power consumption. The oscillator has an eight phase output, and the TDC resolution reaches to one-eighth of its period. In the circuit, when the stop signal arrives and the digital result is specified, the circuit stops the oscillation of the ring oscillator to prevent further power consumption. The proposed time-to-digital converter is implemented in a 65nm technology. Its resolution is 180ps, its average power consumption is 119µW, and its area is 644µm2.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"87 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High Swing and Low Power Associative Memory Based on Emerging Technologies 基于新兴技术的高摆幅低功耗联想存储器
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152313
Mahan Rezaei, Arefe Amirany, Mohammad Hossein Moaiyaeri, Kian Jafari
{"title":"A High Swing and Low Power Associative Memory Based on Emerging Technologies","authors":"Mahan Rezaei, Arefe Amirany, Mohammad Hossein Moaiyaeri, Kian Jafari","doi":"10.1109/IICM57986.2022.10152313","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152313","url":null,"abstract":"Over time, the need to process complex tasks has increased. This need leads to intelligent processors. This paper proposed a robust nonvolatile associative memory based on spintronic synapses utilizing magnetic tunnel junction (MTJ) and carbon nanotube field-effect transistors (CNTFET)-based neurons. The Proposed synapse produces more weights with more distance between them. The proposed design uses the MTJ device because of its fascinating nonvolatility feature. At the same time, CNTFET has overcome the conventional CMOS shortcomings like the short channel effect and low hole mobility. The proposed design is simulated in the presence of process variations. The proposed design in this paper produces 2.2 times more weights with the same number of MTJs compared to a similar design, and this advantage has a high impact on the capacity of the implemented associative memory.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127053156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Zigzag antimonene nanoribbons for nanoscaled optical devices 纳米光学器件用之字形锑烯纳米带
2022 Iranian International Conference on Microelectronics (IICM) Pub Date : 2022-12-20 DOI: 10.1109/IICM57986.2022.10152307
Ali Molajani, A. Y. Goharrizi
{"title":"Zigzag antimonene nanoribbons for nanoscaled optical devices","authors":"Ali Molajani, A. Y. Goharrizi","doi":"10.1109/IICM57986.2022.10152307","DOIUrl":"https://doi.org/10.1109/IICM57986.2022.10152307","url":null,"abstract":"In the present work, the electronic and optical properties of zigzag antimonene nanoribbons are investigated using density functional theory (DFT) calculations. The electronic properties of nanoribbons such as bad gap size and projected density of states are calculated. In the case of optical properties, the real and imaginary parts of the dielectric function and absorption coefficient are obtained for different values of nanoribbons' width. Based on the simulation results of the present work, antimonene nanoribbons are suitable for absorption of the photons with wavelengths between 384 nm to 568 nm.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116029523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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