{"title":"IEEE Circuits and Systems Society Information","authors":"","doi":"10.1109/TCSII.2025.3561653","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3561653","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"C3-C3"},"PeriodicalIF":4.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981831","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information","authors":"","doi":"10.1109/TCSII.2025.3541469","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3541469","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 3","pages":"C2-C2"},"PeriodicalIF":4.0,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906742","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 10 to 15 GHz Digital Step Attenuator With Robust Temperature Tolerance Across -55 ∘C to 125 ∘C","authors":"Jiang Luo;Yao Peng;Qiang Cheng","doi":"10.1109/TCSII.2025.3546292","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3546292","url":null,"abstract":"This brief presents an efficient adaptive analog temperature compensation technique that stabilizes the amplitude and phase performance of an RF attenuator over an ultra-wide temperature range without compromising its other metrics. The approach utilizes an adaptive analog temperature-dependent voltage source (AATVS) to supply the binary digital control array, which indirectly biases the gate terminals of MOSFET switches in the attenuation unit. This method effectively mitigates thermal variations in on-resistance and intrinsic capacitance. To validate the technique, a 5-bit digital step attenuator (DSA) was designed and fabricated using a <inline-formula> <tex-math>$0.13~mu $ </tex-math></inline-formula>m SiGe BiCMOS process. The DSA exhibited excellent consistency in root-mean-square (RMS) amplitude and phase errors across <inline-formula> <tex-math>$- 55~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$125~^{circ }$ </tex-math></inline-formula>C, achieving an RMS attenuation error below 0.24 dB, an RMS phase error under 2.3°, and an insertion loss (IL) better than 4.9 dB over 10–15 GHz. To the best of the authors’ knowledge, this letter is the first to implement an AATVS-based compensation mechanism in a 5-bit DSA, ensuring stable amplitude and phase accuracy under extreme thermal variations.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"653-657"},"PeriodicalIF":4.0,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143900507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Circuits and Systems Society Information","authors":"","doi":"10.1109/TCSII.2025.3541471","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3541471","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 3","pages":"C3-C3"},"PeriodicalIF":4.0,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906691","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"PIMSR: An Energy-Efficient Processing-in-Memory Accelerator for 60 FPS 4K Super-Resolution","authors":"Juntao Guan;Qinghui Guo;Huanan Li;Rui Lai;Ruixue Ding;Libo Qian;Zhangming Zhu","doi":"10.1109/TCSII.2025.3545466","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3545466","url":null,"abstract":"Due to the huge computational load, CNN-based super-resolution solutions are hard to be deployed on resource-constrained edge devices. In this brief, we proposed a Processing-in-Memory based SR accelerator (PIMSR) that leverages direct simple memory access operations to supersede intensive multiply-add in convolution operators, thus fundamentally improving the energy efficiency. To address the storage explosion problem, we presented an index reparameterized strategy for shrinking the memory requirement of LUT-based PIMSR framework by <inline-formula> <tex-math>$19.58times $ </tex-math></inline-formula>. Furthermore, an address remapping design is putted forward to solve the access conflict in overlap configuration, which greatly boosts the efficiency of memory access. The prototype validation on low-end XC7A200T FPGA indicates that our design yields a new record of energy efficiency up to 671.61 Mpixels/J, over <inline-formula> <tex-math>$5.36times $ </tex-math></inline-formula> higher than existing deep learning based image processors, with extremely low hardware costs.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 4","pages":"623-627"},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Nanopower Folded-Cascode EEG Lowpass Filter","authors":"Surachoke Thanapitak;Khanittha Kaewdang;Xiao Liu;Prajuab Pawarangkoon","doi":"10.1109/TCSII.2025.3545968","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3545968","url":null,"abstract":"This brief presents a continuous-time lowpass biquadratic cell developed from a folded-cascode OTA operating in the subthreshold region. The proposed cell has been implemented by configuring the OTA in a unity-gain feedback manner and inserting two individual capacitors into the output and internal folding nodes. This allows the proposed biquadratic cell to benefit from the high loop gain that maintains good linearity at passband frequencies well below its cutoff. As an application of this biquadratic cell, a pseudo-differential lowpass filter for electroencephalogram detection is designed and implemented in a 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m standard CMOS technology. The custom filter occupies a silicon area of <inline-formula> <tex-math>$230~mu $ </tex-math></inline-formula> m <inline-formula> <tex-math>$times 300~mu $ </tex-math></inline-formula> m and operates from a 0.8-V dc supply with 7 nA total current consumption. Multi-chip measurements exhibit the average cut-off frequency at 151.2 Hz, input-referred noise of <inline-formula> <tex-math>$35~mu $ </tex-math></inline-formula> Vrms, and linear range of 110 mVP. This brief achieves the best FoM to date among recent relevant nano-power filters.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"643-647"},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143900450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 1-Mbps 0.7-nJ/Bit Low-Complexity High-Robust FM-UWB Transmitter Under a Sub-1-V Supply","authors":"Yifan Li;Bo Zhou;Yuyang Ding;Yun Hao;Huikai Xie","doi":"10.1109/TCSII.2025.3546077","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3546077","url":null,"abstract":"A frequency-modulated ultra-wideband (FM-UWB) transmitter is fabricated in 65-nm CMOS, to feature high data rate, high energy efficiency, low complexity, and high robustness. A dual-modulus divider with duty-cycle correction and a square-to-triangular converter with a common-mode feedback unit, are for subcarrier generation. A dual-path ring current-controlled oscillator is for linear FM, and followed by a high-robust small-sized power amplifier. An all-digital automatic frequency control loop calibrates the carrier frequency. Experimental results show that the 3.75-4.25 GHz transmitter generates an FCC-compliant UWB signal, and has an energy efficiency of 0.7 nJ/bit under a data rate of 1 Mbps and a sub-1-V supply, with an active area of 0.14 mm2 and phase noise of –77 dBc/Hz at 1-MHz offset, as well as an output power of –14.3 dBm. Especially, both the subcarrier generator and the PA are different from the existing literature.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 5","pages":"648-652"},"PeriodicalIF":4.0,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143900492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Venakata Sitaraman Puram;Vamsi Krishna Velidi;Arijit De
{"title":"Comments on “Dual-Band Branch-Line Couplers With Short/Open-Ended Stubs”","authors":"Venakata Sitaraman Puram;Vamsi Krishna Velidi;Arijit De","doi":"10.1109/TCSII.2025.3545303","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3545303","url":null,"abstract":"In the above paper (Feng et al., 2020) design of dual band branch-line couplers with short/open-ended stubs was presented. However, there are some major discrepancies & mistakes observed in the design equations and plots as well. For the case of dual band design using open-circuited stubs, it is found that the basic operation of the coupler is lost, where the through port behaves as isolated port and vice versa when attempted to design using circuit simulators with the impedances provided in (Feng et al., 2020). Here, corrected versions for the band ratio versus impedance plots for both dual-band couplers with short-ended and open-ended stubs are provided. Further, the correct design equations are derived and accordingly the correct simulation S-parameter plots for the dual-band couplers with open-ended stubs, along with corrected k values are given. Moreover, other minor typo errors to be noted for better readability for the research community are provided.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 4","pages":"564-567"},"PeriodicalIF":4.0,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yongqian Wang;Zhenghao Ni;Jing Wang;Ju H. Park;Hao Shen
{"title":"Asynchronous Reduced-Order Filtering for Markov Jump Systems and its Application in PWM Circuits","authors":"Yongqian Wang;Zhenghao Ni;Jing Wang;Ju H. Park;Hao Shen","doi":"10.1109/TCSII.2025.3544818","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3544818","url":null,"abstract":"This brief addresses the problem of asynchronous reduced-order filtering for Markov jump systems. The communication between the reduced-order filters and the systems is transmitted through the network. On the one hand, quantization is considered to save network resources; on the other hand, due to the measurement may not be perfect, the system information is a hidden component (i.e., it possesses inaccessibility), therefore reduced-order filters are designed by using the hidden Markov model. Then, the random stability of the plant is guaranteed by a set of conditions derived according to Lyapunov theory. Subsequently, the gains of the designed filters are obtained through decoupling. Finally, the effectiveness of the proposed approach in this brief is confirmed by utilizing a pulse-width-modulation-driven boost converter.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 4","pages":"598-602"},"PeriodicalIF":4.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 1.46-pJ/bit, 149-KF² RO TRNG Based on Reference-RO-Free Thresholding of Jitter Accumulation","authors":"Haibiao Zuo;Qingsen Zhuang;Jiacheng Hao;Haochen Zhong;Xiaojin Zhao","doi":"10.1109/TCSII.2025.3543628","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3543628","url":null,"abstract":"In this brief, a ring-oscillator-based true random number generator (RO-TRNG) is presented with an energy-efficient on-chip module for temporal thresholding of the accumulated jitter noise. The need of power-hungry reference ring oscillator (RO) for frequency collapse detection in previous implementation can be completely removed. In addition, by setting the RO-TRNG’s enable signal adaptively according to the output of the proposed jitter accumulation thresholding (JAT) module, the redundant oscillations in most cycles of the prior art can be fully eliminated, leading to significant energy saving per each TRNG bit. Based on a 65-nm 1.2 V standard CMOS process, the fabricated TRNG chips feature an ultra-compact silicon area of 149 K<inline-formula> <tex-math>$F^{2}$ </tex-math></inline-formula>. Meanwhile, a high energy efficiency of 1.46 pJ/bit is achieved for the prototype chips operated under a supply voltage of 1.0 V and an overall throughput of 44.7 Mbps. High randomness of the fabricated TRNG chips is well validated by using both National Institute of Standards and Technology (NIST) and autocorrelation function (ACF) test tools. Moreover, high Shannon entropy values over 0.999998 are observed for the TRNG chips operated under an industrial temperature range of −40°C~125°C and a supply voltage range of 1.0 V~1.4 V, showing excellent tolerance to the process-voltage-temperature (PVT) variations.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 4","pages":"618-622"},"PeriodicalIF":4.0,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}