IEEE Transactions on Circuits and Systems I: Regular Papers最新文献

A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS 具有自偏置单极刺激驱动器和多输出电荷泵转换器的16通道神经刺激IC在低压CMOS中实现25.44 mw /mm2功率密度

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-30 DOI: 10.1109/TCSI.2025.3562150

Pengfei Han;Yi Ding;Dingfu He;Xinqin Guo;Shiyv Wu;Hongming Lyu

{"title":"A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS","authors":"Pengfei Han;Yi Ding;Dingfu He;Xinqin Guo;Shiyv Wu;Hongming Lyu","doi":"10.1109/TCSI.2025.3562150","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3562150","url":null,"abstract":"Electrical neuromodulation has shown superior therapeutic outcomes compared with pharmacological interventions alone. This work introduces a 16-channel neurostimulation IC featuring transistor-stacked monopolar stimulation drivers in standard CMOS technology. With a self-adaptive biasing scheme, the stimulation driver ensures operational safety across all load conditions under the ±6-V voltage compliance and successfully addresses potential leakage issues in prior work. Each driver features 8-bit current control with <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>A resolution. An on-chip charge-pump system generates ±6-V supplies using a novel multiple-output pulse-skipping modulation scheme and achieves a remarkable power density of 25.44 mW/mm<sup>2</sup> through the systematic optimization of sub-converters. The 16-channel neurostimulation IC is fabricated in a 180-nm standard CMOS technology, occupying a total pad-included area of 3 mm<sup>2</sup>. The compactness and process compatibility of the design demonstrate the potential for enabling next-generation high-channel-count neural interfaces.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2556-2565"},"PeriodicalIF":5.2,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Circuits and Systems--I: Regular Papers Publication Information IEEE电路与系统汇刊-I：常规论文出版信息

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-29 DOI: 10.1109/TCSI.2025.3560163

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IEEE Transactions on Circuits and Systems--I: Regular Papers Information for Authors IEEE电路与系统学报-I：作者的常规论文信息

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-29 DOI: 10.1109/TCSI.2025.3560169

引用次数: 0

IEEE Circuits and Systems Society Information IEEE电路与系统学会信息

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-29 DOI: 10.1109/TCSI.2025.3560165

引用次数: 0

A 24–32 GHz Bidirectional Variable-Gain Phase Shifter Using a Novel Quadrature Generator and Dual-Function Bidirectional Amplifier With Phase Compensation 采用新型正交发生器和带相位补偿的双功能双向放大器的24 - 32ghz双向变增益移相器

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-25 DOI: 10.1109/TCSI.2025.3561511

Ke Long;Taotao Xu;Haoshen Zhu;Shuai Deng;Pei Qin;Wenquan Che;Quan Xue

{"title":"A 24–32 GHz Bidirectional Variable-Gain Phase Shifter Using a Novel Quadrature Generator and Dual-Function Bidirectional Amplifier With Phase Compensation","authors":"Ke Long;Taotao Xu;Haoshen Zhu;Shuai Deng;Pei Qin;Wenquan Che;Quan Xue","doi":"10.1109/TCSI.2025.3561511","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3561511","url":null,"abstract":"This paper presents a 6-bit bidirectional variable-gain vector-summing active phase shifter (BVG-AVSPS) in TSMC 65nm CMOS technology. The proposed BVG-AVSPS consists of a novel bidirectional quadrature generator, four dual-function bidirectional amplifiers and two input/output matching networks. The proposed hybrid-based quadrature generator achieves low orthogonal amplitude and phase mismatches over a wideband with bidirectionality. Dual-function bidirectional amplifiers are employed to achieve either vector modulation or gain control functions in different operational directions. To improve the phase shifting accuracy during gain tuning, compensation transistors are employed in the dual-function bidirectional amplifiers to minimize additional phase variation. The proposed input/output networks based on L-type coupled inductors ensure proper impedance matching for both input and output in TX and RX modes. For both TX and RX modes over 24 GHz~32 GHz, the measured RMS phase and gain errors are <inline-formula> <tex-math>$1.25^{circ } sim 2.4^{circ }$ </tex-math></inline-formula> and 0.42 dB~0.56 dB throughout 12.3 dB gain tuning range, respectively. With the help of the compensation transistors, measured phase variation is less than ±2.1° during output gain tuning. The core area of proposed BVG-AVSPS is <inline-formula> <tex-math>$625~mu $ </tex-math></inline-formula>m<inline-formula> <tex-math>$times 355~mu $ </tex-math></inline-formula>m.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2614-2625"},"PeriodicalIF":5.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Input Phase Controlled Doherty Power Amplifier With Out-Phased Current Load Modulation for Arbitrary Output Back-Off 输入相位控制的多赫蒂功率放大器，用于任意输出回退的出相电流负载调制

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-22 DOI: 10.1109/TCSI.2025.3557496

Bai Hua Zeng;Yu Fei Pan;Fu Cheng Yuan;Wing Shing Chan;Shao Yong Zheng

{"title":"Input Phase Controlled Doherty Power Amplifier With Out-Phased Current Load Modulation for Arbitrary Output Back-Off","authors":"Bai Hua Zeng;Yu Fei Pan;Fu Cheng Yuan;Wing Shing Chan;Shao Yong Zheng","doi":"10.1109/TCSI.2025.3557496","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3557496","url":null,"abstract":"A tradeoff between bandwidth and back-off range is commonly found in the Doherty power amplifier (DPA). This paper proposes an input phase control mechanism together with a cooperative asymmetric out-phased current load modulation technique. The cooperative asymmetric out-phased current load modulation can extend the output back-off range (OBO). The input phase control mechanism together with modified impedance transforming load modulation networks (LMNs) is used to widen the DPA bandwidth. An input coupled-line coupler is implemented to realize this phase requirement. For demonstration purposes, a DPA with an operating frequency from 1.7 GHz to 2.9 GHz and with a 9-dB OBO range is designed and fabricated using GaN HEMT devices. Continuous-wave measurements show that the implemented DPA exhibits a drain efficiency ranging from 54.5% to 75.6% at saturation and from 41% to 50.6% at 9-dB OBO across the operating bandwidth. When excited by a 20-MHz long-term evolution (LTE) signal with a 9-dB peak-to-average power ratio (PAPR), the implemented DPA achieves average drain efficiencies of 41%- 53.8% with an adjacent channel leakage ratio (ACLR) better than −48.1 dBc after digital predistortion (DPD).","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2626-2638"},"PeriodicalIF":5.2,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Data-Driven Attack Detection and Identification for Cyber-Physical Systems Under Sparse Sensor Attacks: Iterative Reweighted l2/l1 Recovery Approach 稀疏传感器攻击下网络物理系统的数据驱动攻击检测与识别：迭代重加权l2/l1恢复方法

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-21 DOI: 10.1109/TCSI.2025.3559987

Jun-Lan Wang;Xiao-Jian Li

{"title":"Data-Driven Attack Detection and Identification for Cyber-Physical Systems Under Sparse Sensor Attacks: Iterative Reweighted l2/l1 Recovery Approach","authors":"Jun-Lan Wang;Xiao-Jian Li","doi":"10.1109/TCSI.2025.3559987","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3559987","url":null,"abstract":"This paper investigates the data-based attack detection and identification for cyber-physical systems (CPSs) under sparse sensor attacks. In order to improve the identification performance, a novel scheme based on an iterative reweighted <inline-formula> <tex-math>$l_{2}/l_{1}$ </tex-math></inline-formula> minimization algorithm is presented. Firstly, a threshold that characterizes the maximum number of identifiable attacks is determined. By introducing the reweighting technique, smaller weights are assigned to the relatively easy-to-identify attacks, namely, blocks with larger <inline-formula> <tex-math>$l_{2}$ </tex-math></inline-formula>-norms, thus forcing the minimization to focus on the ones with smaller <inline-formula> <tex-math>$l_{2}$ </tex-math></inline-formula>-norms. Then, the number of identifiable attacks is enhanced and a higher identification accuracy is guaranteed compared with the existing results. Finally, three examples are given to verify the effectiveness and advantages of the proposed scheme in both noisy and noiseless cases.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2890-2902"},"PeriodicalIF":5.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Modeling and Nonlinear Dynamic Behavior Analysis of Photovoltaic-Energy Storage DC Microgrid 光伏储能直流微电网建模及非线性动态行为分析

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-21 DOI: 10.1109/TCSI.2025.3558905

Ronglong Wang;Fan Xie;Bo Zhang;Dongyuan Qiu;Wenxun Xiao;Yanfeng Chen

{"title":"Modeling and Nonlinear Dynamic Behavior Analysis of Photovoltaic-Energy Storage DC Microgrid","authors":"Ronglong Wang;Fan Xie;Bo Zhang;Dongyuan Qiu;Wenxun Xiao;Yanfeng Chen","doi":"10.1109/TCSI.2025.3558905","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3558905","url":null,"abstract":"In the DC microgrid cluster system, due to the large number of converters, there are many operation modes and switching frequencies. The traditional modeling methods are difficult to balance the accuracy of the model and the simplicity of calculation and are not suitable for different switching frequency systems. In view of the above problems, this paper uses simplified discrete time mapping model to model the system. It combines the state space average model with the discrete time mapping model, which greatly improves the simplicity and accuracy of modeling. Taking the photovoltaic-energy storage system as an example, this paper analyzes the nonlinear behavior of the system and predicts the critical control parameters when the Hopf bifurcation occurs in the system. The eigenvalue sensitivity analysis is used to determine the eigenvalue change rate and change trend when the control parameters change, which provides guidance for the selection of parameters in practical applications. Finally, the high precision of the model is verified by simulation, and the applicability and effectiveness of the method in different switching frequency systems are verified by experiments.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2778-2791"},"PeriodicalIF":5.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Design of Oscillator-Based Reconfigurable Modulator With High-Q FBAR Resonators Supporting Fast OOK/BFSK/ BPSK Modulation 支持快速OOK/BFSK/ BPSK调制的高q FBAR谐振振荡器可重构调制器设计

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-18 DOI: 10.1109/TCSI.2025.3559727

Dong Liang;Hui Zhang;Yetong Wang;Linhao Ma;Shiyue Ma;Zhijun Zhou;Fanyi Meng;Kaixue Ma;Keping Wang

{"title":"Design of Oscillator-Based Reconfigurable Modulator With High-Q FBAR Resonators Supporting Fast OOK/BFSK/ BPSK Modulation","authors":"Dong Liang;Hui Zhang;Yetong Wang;Linhao Ma;Shiyue Ma;Zhijun Zhou;Fanyi Meng;Kaixue Ma;Keping Wang","doi":"10.1109/TCSI.2025.3559727","DOIUrl":"https://doi.org/10.1109/TCSI.2025.3559727","url":null,"abstract":"An oscillator-based reconfigurable modulator is proposed to support multi-mode and fast modulation. A direct-modulation structure composed of the cross-coupled oscillator with the fast-switched film bulk acoustic resonator (FBAR) is used to enhance the frequency stability under fast OOK/BFSK modulation. To avoid extra phase-reversal circuitry, a polarity-swapped switching structure is employed in the differential branches of the modulator to achieve energy-efficient BPSK modulation, and this structure is also reused as a buffer stage for OOK/BFSK modulation to avoid the loading effect. In addition, an adaptive fast-switching technique is also proposed to improve OOK/BFSK modulation data rate and energy efficiency. The modulator is fabricated in a 180 nm CMOS technology. The free-running oscillation frequencies with two FBARs are 962 MHz and 990 MHz, and the measured phase noises are -137.3 dBc/Hz@1MHz and -137.1 dBc/Hz@1MHz, respectively. For OOK/BFSK/BPSK modulation, the proposed modulator demonstrated 280/325/67.6 pJ/bit energy efficiency and 5.63/4.20/5.55 % rms EVM with 10/10/50 Mbps data rates.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2543-2555"},"PeriodicalIF":5.2,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Systematic Design of a 3.5 GS/s 11-bit Time-Interleaved SAR ADC in 28 nm CMOS Achieving 54 dB SNDR at Nyquist Frequency 在奈奎斯特频率下实现54 dB信噪比的28 nm CMOS 3.5 GS/s 11位时交错SAR ADC系统设计

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2025-04-17 DOI: 10.1109/TCSI.2025.3559354

Shuai Liu;Yechen Tian;Congyang Sun;Guoyu Li;Hao Xu;Na Yan

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