IEEE Transactions on Circuits and Systems I: Regular Papers最新文献_第10页

A Generalize Hardware Debugging Approach for Large Language Models Semi-Synthetic, Datasets 大型语言模型半合成数据集的通用硬件调试方法

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3487486

Weimin Fu;Shijie Li;Yifang Zhao;Kaichen Yang;Xuan Zhang;Yier Jin;Xiaolong Guo

{"title":"A Generalize Hardware Debugging Approach for Large Language Models Semi-Synthetic, Datasets","authors":"Weimin Fu;Shijie Li;Yifang Zhao;Kaichen Yang;Xuan Zhang;Yier Jin;Xiaolong Guo","doi":"10.1109/TCSI.2024.3487486","DOIUrl":"https://doi.org/10.1109/TCSI.2024.3487486","url":null,"abstract":"Large Language Models (LLMs) have precipitated emerging trends towards intelligent automation. However, integrating LLMs into the hardware debug domain encounters challenges: the datasets for LLMs for hardware are often plagued by a dual dilemma – scarcity and subpar quality. Traditional hardware debug approaches that rely on experienced labor to generate detailed prompts are not cheaply scalable. Similarly, strategies that depend on existing LLMs and randomly generated prompts fail to achieve sufficient reliability. We propose a directed, semi-synthetic data synthetic method that leverages version control information and journalistic event descriptions. To produce high-quality data, this approach utilizes version control data from hardware projects combined with the 5W1H (Who, What, When, Where, Why, How) journalistic principles. It facilitates the linear scaling of dataset volumes without depending on skilled labor. We have implemented this method on a collected dataset of open-source hardware designs and fine-tuned fifteen general-purpose LLMs to enable their capability in hardware debugging tasks, thereby validating the efficacy of our approach.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 2","pages":"623-636"},"PeriodicalIF":5.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Open Access Publishing IEEE 开放存取出版

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3498757

引用次数: 0

IEEE Transactions on Circuits and Systems--I: Regular Papers Information for Authors IEEE 《电路与系统》期刊--I：常规论文作者须知

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3494637

引用次数: 0

Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology 采用GaN-on-SiC HEMT技术的片上耦合线结构的紧凑型可重构双频MMIC SPDT/SP4T开关

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3504273

Xu Yan;Jingyuan Zhang;Baoguo Yang;Si-Ping Gao;Yongxin Guo

{"title":"Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology","authors":"Xu Yan;Jingyuan Zhang;Baoguo Yang;Si-Ping Gao;Yongxin Guo","doi":"10.1109/TCSI.2024.3504273","DOIUrl":"https://doi.org/10.1109/TCSI.2024.3504273","url":null,"abstract":"This paper presents the design and analysis of dual-band monolithic microwave integrated circuit (MMIC) switches, including a single pole double throw (SPDT) and a single pole four throw (SP4T). With a novel on-chip coupled-line (OCL) topology, the input signal can be switched into low- or high-band paths to create dual-band characteristics. By carefully selecting the electrical lengths of OCLs and device size for corresponding shunt-FETs, the operating frequencies for low- and high-bands can be determined. This brings about improved insertion loss (IL) and isolation (ISO) in a compact structure. With the proposed techniques, two switch prototypes have been designed and fabricated in a 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaN-on-SiC process for high-power capability. The SPDT consists of a low-band path and a high-band path. It achieves an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm at a low-band of DC-15 GHz; and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm at a high-band of 20-40 GHz, respectively. The return loss is better than 11 dB for each port. The SP4T achieves a fully integrated dual-band transmit/receive (T/R) switch with doubled low-/high-band paths. It shows an average IL/ISO of 2.26/27.5 dB with the best IP1dB of 31.2 dBm at a low-band of 5-15 GHz; and an average IL/ISO of 2.7/26.5 dB with the best IP1dB of 30 dBm at a high-band of 20-30 GHz have been achieved, respectively. Better than 11.3 dB return loss is obtained for each port. The chip sizes are <inline-formula> <tex-math>$1.8times 0.9$ </tex-math></inline-formula> mm2 for the SPDT and <inline-formula> <tex-math>$2.2times 1.7$ </tex-math></inline-formula> mm2 for the SP4T.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 3","pages":"1029-1041"},"PeriodicalIF":5.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Guest Editorial Special Issue on the International Symposium on Circuits and Systems—ISCAS 2024 电路与系统国际研讨会--ISCAS 2024》特邀编辑专刊

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3494892

Xinmiao Zhang

引用次数: 0

IEEE Transactions on Circuits and Systems--I: Regular Papers Publication Information IEEE 电路与系统论文集--I：常规论文出版信息

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3494635

引用次数: 0

IEEE Circuits and Systems Society Information 电气和电子工程师学会电路与系统协会信息

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-26 DOI: 10.1109/TCSI.2024.3494639

引用次数: 0

A SPAD Image Sensor With Main-Sub-TDC-Based Coincidence Detection 基于主子tdc的符合检测SPAD图像传感器

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-25 DOI: 10.1109/TCSI.2024.3503422

Chenggong Wan;Yi Zhu;Yingjie Ma;Xue Li;Lixia Zheng;Jin Wu;Weifeng Sun

{"title":"A SPAD Image Sensor With Main-Sub-TDC-Based Coincidence Detection","authors":"Chenggong Wan;Yi Zhu;Yingjie Ma;Xue Li;Lixia Zheng;Jin Wu;Weifeng Sun","doi":"10.1109/TCSI.2024.3503422","DOIUrl":"https://doi.org/10.1109/TCSI.2024.3503422","url":null,"abstract":"Light detection and ranging (Lidar) is usually enabled by Single-Photon Avalanche Detector (SPAD) sensors which may be falsely triggered by ambient light. Coincidence detection can suppress the ambient light at the cost of the lateral resolution. A \u0000<inline-formula> <tex-math>$64times 64$ </tex-math></inline-formula>\u0000 SPAD image sensor with coincidence detection is proposed for Lidar. A main-sub time-to-digital converter (TDC), in which the main TDC is used for timestamping the coincidence window and the sub-TDC is used for timestamping the event within the coincidence window, is proposed to avoid the loss of the lateral resolution at a small power cost. A delay-locked loop (DLL) is adopted to generate an analog voltage for maintaining the length of the coincidence window against process-voltage-temperature (PVT) variations. A TDC code correction circuit is proposed to reduce the probability of TDC inter-segment errors to 0.7%. The SPAD image sensor is based on the 3D integration of a SPAD array with a ROIC. The ROIC chip is fabricated in a \u0000<inline-formula> <tex-math>$0.18mu $ </tex-math></inline-formula>\u0000m CMOS process. Driven by a 250 MHz multi-phase clock and a 100 MHz data readout clock, the chip achieves a maximum frame rate of 35.7 kframe/s, a timing resolution of 0.5 ns, and a timing range of \u0000<inline-formula> <tex-math>$2mu $ </tex-math></inline-formula>\u0000s. The typical average power consumption of the ROIC is 135.5 mW (@21.7 kframes/s). The measured differential nonlinearity (DNL) ranges from -0.74 to +0.82 least significant bit (LSB), and the integral nonlinearity (INL) ranges from -0.95 to +0.95 LSB.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 1","pages":"50-60"},"PeriodicalIF":5.2,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Statistical Post-FEC BER Estimation of High-Speed Serial Links Subject to DFE Error Propagation 受DFE误差传播影响的高速串行链路的统计后fec误码率估计

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-22 DOI: 10.1109/TCSI.2024.3491191

Zhuo Chen;Kezhu Song;Chengyang Zhu;Dongwei Zou;Yuecheng Xu

引用次数: 0

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications 用于5G 28 GHz和39 GHz应用的22nm FD-SOI双频功率放大器EVM测量的后门偏置控制分析

IF 5.2 1区工程技术

IEEE Transactions on Circuits and Systems I: Regular Papers Pub Date : 2024-11-22 DOI: 10.1109/TCSI.2024.3487636

Lucas Nyssens;M. Nabet;M. Rack;Y. Bendou;S. Wane;J. B. Sombrin;J.-P. Raskin;D. Lederer

{"title":"Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications","authors":"Lucas Nyssens;M. Nabet;M. Rack;Y. Bendou;S. Wane;J. B. Sombrin;J.-P. Raskin;D. Lederer","doi":"10.1109/TCSI.2024.3487636","DOIUrl":"https://doi.org/10.1109/TCSI.2024.3487636","url":null,"abstract":"This paper presents a dual-band power amplifier (PA) covering the 5G n257 to n260 frequency 2 bands (24.25 to 29.5 GHz and 37 to 43.5 GHz), fabricated in the 22 nm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. Its design is based on a distributed balun at the output that efficiently performs a wideband load impedance transformation. The back-gate terminal of each transistor is connected to different pads for detailed back-gate bias variation analysis. Under 5G new radio (NR) modulated signal measurements, we show how the average output power and efficiency can be optimized by varying the back-gate bias, which optimal value depends on (i) the signal bandwidth, (ii) the carrier frequency and (iii) the target error-vector-magnitude (EVM) value. To the best of the authors’ knowledge, the impact of back-gate bias control on the system-level EVM figure of merit is shown for the first time in this work. Overall, with 7.5 dBm and 7.3% mean output power and efficiency, respectively, at 27 GHz, 6 dBm and 5% at 40 GHz, for a 800 MHz bandwidth 5G NR signal, the presented PA shows outstanding performance among wideband/multiband FD-SOI-based PAs covering the 28 and 39 GHz bands, featuring comparable performance to best-in-class narrowband PA designs in FD-SOI technology.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 2","pages":"753-762"},"PeriodicalIF":5.2,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0