发布求助
文献互助 智能选刊 最新文献

2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

筛选
英文 中文
Improving efficiency and light quality of white LEDs by adding ZrO2 nano-particle and red phosphor in encapsulant 在封装剂中加入ZrO2纳米粒子和红色荧光粉，提高白光led的效率和光质量
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543392
Yu-Cheng Lan, Chunliang Lin, Wei-Syuan Wang, Zheng-Yi Liu, B. Hsieh, Sheng-Lun Chen, Hui-Kai Huang
{"title":"Improving efficiency and light quality of white LEDs by adding ZrO2 nano-particle and red phosphor in encapsulant","authors":"Yu-Cheng Lan, Chunliang Lin, Wei-Syuan Wang, Zheng-Yi Liu, B. Hsieh, Sheng-Lun Chen, Hui-Kai Huang","doi":"10.1109/ISNE.2016.7543392","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543392","url":null,"abstract":"Efficiency and light quality of white light-emitting diodes (LEDs) were improved by adding ZrO2 nano-particle and red phosphor in encapsulant. ZrO2 nanoparticles can enhance the light scattering ability of encapsulant on LED chip. Doping ZrO2 nanoparticles with YAG phosphor into encapsulant package (LED II) luminous flux increase of 7.7 % compared conventional doping YAG phosphor package (LED I). Conformal YAG phosphor on LED chip and doping ZrO2 nanoparticles into encapsulant package of white LED (LED III) the luminous flux increase of 19.8 % compared LED II. Doping red phosphor into encapsulant of LED II produced LED IV, CRI can improved from 47 to 90 and R9 from 0 to 90.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116741958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electronic properties of strained monolayer MoS2 using tight binding method 用紧密结合法研究应变单层MoS2的电子特性
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543323
Shuoyuan Chen, Yuh‐Renn Wu
{"title":"Electronic properties of strained monolayer MoS2 using tight binding method","authors":"Shuoyuan Chen, Yuh‐Renn Wu","doi":"10.1109/ISNE.2016.7543323","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543323","url":null,"abstract":"The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129081204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy 选择性面积分子束外延在Si(111)上生长高定向的InAs纳米线
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543314
Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin
{"title":"Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy","authors":"Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543314","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543314","url":null,"abstract":"Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129471530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS 62 - 77ghz 90 nm CMOS低噪声放大器的设计与实现
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543353
Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
{"title":"Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543353","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543353","url":null,"abstract":"A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125788253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of tri-band bandpass filter using parallel coupled structures 采用平行耦合结构的三带带通滤波器设计
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543378
Teng-Yi Yang, Yi-Cheng Tsai, Shih‐Kun Liu
{"title":"Design of tri-band bandpass filter using parallel coupled structures","authors":"Teng-Yi Yang, Yi-Cheng Tsai, Shih‐Kun Liu","doi":"10.1109/ISNE.2016.7543378","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543378","url":null,"abstract":"A tri-band bandpass filter using λ/4 parallel-coupled stepped impedance microstrip is proposed. The center frequencies of the three passbands are located at 1.78 GHz, 3.9 GHz, and 5.94 GHz respectively. A transmission zero is generated to improve the isolation between the first and second passbands. The experimental results agree well with the simulated ones. The circuit size is measured to be 0.04 λg × 0.75 λg.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115939412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the multi-binding biotinylated Iron oxide nanoparticles (biotin-IONPs) as a promising versatile label material for magnetic biodetection devices 多结合生物素化氧化铁纳米颗粒(生物素- ionps)作为磁性生物检测设备有前途的多功能标记材料的研究
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543347
Yimeng Du, P. Pong
{"title":"Study of the multi-binding biotinylated Iron oxide nanoparticles (biotin-IONPs) as a promising versatile label material for magnetic biodetection devices","authors":"Yimeng Du, P. Pong","doi":"10.1109/ISNE.2016.7543347","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543347","url":null,"abstract":"By realizing the multi-binding of magnetic labels with each biomolecule, the sensitivity of magnetic biodetection devices can be improved. In this study, biotinylated iron oxide nanoparticles (biotin-IONPs) were synthesized, and their multi-binding with streptavidin-functionalized biomolecules was investigated. The final biotin-IONPs with 17 nm magnetic core size exhibit superparamagnetic behavior, hydrophilic stability, and multi-binding ability with streptavidin-functionalized antibodies both on gold surfaces and suspended in solution. Consequently, biotin-IONPs are promising magnetic label materials for the improvement of magnetic biodetection devices.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115916437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure of GaAsN alloy within miscibility gap GaAsN合金在混相间隙内的组织
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543310
Hong-Ming Wu, K. Lin, Hao-Hsiung Lin
{"title":"Structure of GaAsN alloy within miscibility gap","authors":"Hong-Ming Wu, K. Lin, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543310","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543310","url":null,"abstract":"We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130444809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency enhancement of perovskite solar cells with a buffer layer 用缓冲层提高钙钛矿太阳能电池的效率
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543388
Meng-Cheng Yeh, S. Su, Wen-Kai Lin, Jhih-Yung Chen, M. Yokoyama
{"title":"Efficiency enhancement of perovskite solar cells with a buffer layer","authors":"Meng-Cheng Yeh, S. Su, Wen-Kai Lin, Jhih-Yung Chen, M. Yokoyama","doi":"10.1109/ISNE.2016.7543388","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543388","url":null,"abstract":"The perovskite solar cell using solvent treatment on active layer and a thin buffer layer added was fabricated and characterized. The morphology of MAPM3 active layer agglomerates owing to methylbenzene treatment and the perovskite solar cell shows an increased short circuit current density (Jsc). An efficient buffer layer, the 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), which enhances device performance by forming well interfacial contact and restraining the hole from transporting to the cathode. The optimized perovskite solar cell showed an open circuit voltage (Voc) of 0.90 V, Jsc of 13.44 mA/cm2, fill factor (F.F.) of 64.69%, and power conversion efficiency (PCE) of 7.81% under simulated AM1.5G illumination of 100 mW/cm2, respectively.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134274014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effects of plating current and rotation speed on the microstructural properties of electrochemical plated Cu films 电镀电流和转速对电化学镀铜膜微观组织性能的影响
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543401
Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying
{"title":"The effects of plating current and rotation speed on the microstructural properties of electrochemical plated Cu films","authors":"Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying","doi":"10.1109/ISNE.2016.7543401","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543401","url":null,"abstract":"The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed of wafer. Decreasing plating current increases the impurity concentration in an ECP Cu film. The impurity content is also raised by elevating the rotation speed of wafer. The grain size and texture behavior of an ECP Cu film is affected by the impurity concentration and distribution.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124095086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation 利用二维模拟研究介电常数和温度对自开关器件整流性能的影响
2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543287
N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo
{"title":"Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation","authors":"N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo","doi":"10.1109/ISNE.2016.7543287","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543287","url":null,"abstract":"Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124802924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信