选择性面积分子束外延在Si(111)上生长高定向的InAs纳米线

Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin
{"title":"选择性面积分子束外延在Si(111)上生长高定向的InAs纳米线","authors":"Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543314","DOIUrl":null,"url":null,"abstract":"Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy\",\"authors\":\"Che-Wei Yang, Wei-Chieh Chen, Hao-Hsiung Lin\",\"doi\":\"10.1109/ISNE.2016.7543314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了生长条件(V/III比、初始处理和孔径)对纳米线(NW)在Si(111)衬底上选择性MBE生长的影响。高V/III比有利于NWs的轴向生长。垂直产率研究结果表明,在非极性(111)Si上生长InAs时,(111)B是一个固有的优先畴。这种偏好与治疗方法无关。然而,生长前的As光照会将(111)Si转化为(111)A InAs,从而降低了垂直产率。到目前为止,我们已经成功地实现了70%以上的垂直收率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy
Effects of growth conditions including V/III ratio, initial treatment and hole diameter on the selective-area MBE growth of InAs nanowires (NW) on patterned Si (111) substrates are investigated. High V/III ratio favors the axial growth of the NWs. Results from vertical yield study suggests that (111)B is an inherent preferential domain when growth InAs on non-polar (111)Si. The preference is independent of the treatments. However, As illumination before the growth could convert the (111)Si to (111)A InAs and thus decreases the vertical yield. So far, we have successfully achieved a vertical yield over 70%.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信