用紧密结合法研究应变单层MoS2的电子特性

Shuoyuan Chen, Yuh‐Renn Wu
{"title":"用紧密结合法研究应变单层MoS2的电子特性","authors":"Shuoyuan Chen, Yuh‐Renn Wu","doi":"10.1109/ISNE.2016.7543323","DOIUrl":null,"url":null,"abstract":"The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electronic properties of strained monolayer MoS2 using tight binding method\",\"authors\":\"Shuoyuan Chen, Yuh‐Renn Wu\",\"doi\":\"10.1109/ISNE.2016.7543323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

用紧密结合的方法研究了单层二硫化钼的电子性质。研究了单元化二硫化钼的带隙、有效质量以及拉伸应变的影响。在双轴应变和单轴应变中,我们观察到,随着应变的增加,带隙和有效质量减小。然而,在1.8%的双轴应变和4.2%的单轴应变下,发生了直接到间接的带隙转变。因此,空穴输运的有效质量由较小的mh (K)变为较大的mh (T),这对输运性质有显著影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic properties of strained monolayer MoS2 using tight binding method
The electronic properties of monolayer MoS2 have been investigated using tight binding method. We have studied the band gap and effective mass of monolayer MoS2, and the effect of tensile strain. In both bi-axial and uni-axial strain, we observed that the band gap and the effective mass decrease when the strain increases. However, at about 1.8% bi-axial strain and 4.2% uni-axial strain, the direct to indirect band gap transition happens. The hole effective mass for transport therefore changes from the smaller mh (K) to the larger mh (T), which makes significant influence on the transport properties.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信