Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS

Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
{"title":"Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543353","DOIUrl":null,"url":null,"abstract":"A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.
62 - 77ghz 90 nm CMOS低噪声放大器的设计与实现
设计并实现了一种采用低成本90纳米标准CMOS技术的62 ~ 77 GHz宽带低噪声放大器(LNA)。实测结果表明,该LNA在70 GHz时的峰值增益为10dB,在62 ~ 77 GHz范围内的3dB带宽为15 GHz,输出反射系数(S22)优于-4dB,输入反射系数(S11)低于-10dB,功耗为17.6 mW。此外,模拟噪声系数(NF)在70 GHz时为7.6 dB,整个带宽低于8.5 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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