N. Zakaria, Z. Zailan, M. Isa, S. Taking, M. Arshad, S. R. Kasjoo
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引用次数: 5
摘要
报道了一种基于ingaas的自开关二极管(SSD)的高频整流特性。利用ATLAS二维仿真器对相对介电常数为1.0 ~ 9.3的不同绝缘通道材料在300 K ~ 600 K温度范围内的l形70 nm通道固态硬盘的电流-电压特性进行了仿真。一个类似的I-V曲线二极管的行为已被观察到。此外,通过外推模拟的I-V图评估了固态硬盘的曲率系数,并观察了介电常数和温度对整流性能的影响。所得结果有助于固态硬盘作为微波整流器的设计,特别是在射频采集应用中。
Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation
Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.