GaAsN合金在混相间隙内的组织

Hong-Ming Wu, K. Lin, Hao-Hsiung Lin
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引用次数: 0

摘要

本文报道了一系列宽x范围的GaAs1-xNx的结构和电子性能。采用等离子体辅助分子束外延技术在(001)GaAs衬底上生长合金。采用透射电镜和选择性区域电子衍射(SAD)对GaAs0.496N0.504样品的晶体进行了探测。结果表明,该合金为多晶非晶合金。在多晶中观察到锌闪锌矿(ZB)和六角形结构。在这个结果中,我们提出了两种结构产生混相和相分离。计算垂直和水平晶格常数,x在0.106-0.848范围内。观察到氮含量随氮含量的增加而急剧下降或缓慢下降,我们认为这一结果与氮团簇本身[001]与残余水平基底应变有关。光调制反射光谱法测定了GaAs1-xNx合金的能隙,其范围在0.7 ~ 2.0 eV之间,覆盖了太阳光谱的大部分。能隙与BAC模型基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structure of GaAsN alloy within miscibility gap
We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.
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