Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
{"title":"62 - 77ghz 90 nm CMOS低噪声放大器的设计与实现","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543353","DOIUrl":null,"url":null,"abstract":"A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS\",\"authors\":\"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin\",\"doi\":\"10.1109/ISNE.2016.7543353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"2003 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and implementation of a 62–77 GHz low noise amplifier in 90 nm CMOS
A 62 to 77 GHz broadband low noise amplifier (LNA) using a low-cost 90 nm standard CMOS technology is designed and implemented. From the measured results, the proposed LNA has a peak gain of 10dB at 70 GHz, a 3dB bandwidth is 15 GHz from 62 to 77 GHz, an output reflection coefficient (S22) is better than -4dB, an input reflection coefficient (S11) is lower than -10dB and the power consumption of the LNA is 17.6 mW. In addition, the simulated noise figure (NF) is 7.6 dB at 70 GHz and lower than 8.5 dB entire bandwidth.
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