Wenbo Jia, Yi Jing, Han Zhang, Baoyan Tian, Huabo Huang, Changlei Wang, Ligang Xu
{"title":"Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells.","authors":"Wenbo Jia, Yi Jing, Han Zhang, Baoyan Tian, Huabo Huang, Changlei Wang, Ligang Xu","doi":"10.1007/s12200-023-00103-1","DOIUrl":"10.1007/s12200-023-00103-1","url":null,"abstract":"<p><p>Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic O<sub>2</sub> molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N-C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device's operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"47"},"PeriodicalIF":5.4,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10754768/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139058207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kavya Rajeev, C K Vipin, Anjali K Sajeev, Atul Shukla, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, K N Narayanan Unni
{"title":"Blue emitting exciplex for yellow and white organic light-emitting diodes.","authors":"Kavya Rajeev, C K Vipin, Anjali K Sajeev, Atul Shukla, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, K N Narayanan Unni","doi":"10.1007/s12200-023-00101-3","DOIUrl":"https://doi.org/10.1007/s12200-023-00101-3","url":null,"abstract":"<p><p>White organic light-emitting diodes (WOLEDs) have several desirable features, but their commercialization is hindered by the poor stability of blue light emitters and high production costs due to complicated device structures. Herein, we investigate a standard blue emitting hole transporting material (HTM) N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) and its exciplex emission upon combining with a suitable electron transporting material (ETM), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ). Blue and yellow OLEDs with simple device structures are developed by using a blend layer, NPB:TAZ, as a blue emitter as well as a host for yellow phosphorescent dopant iridium (III) bis(4-phenylthieno[3,2-c]pyridinato-N,C<sup>2</sup><sup>'</sup>)acetylacetonate (PO-01). Strategic device design then exploits the ambipolar charge transport properties of tetracene as a spacer layer to connect these blue and yellow emitting units. The tetracene-linked device demonstrates more promising results compared to those using a conventional charge generation layer (CGL). Judicious choice of the spacer prevents exciton diffusion from the blue emitter unit, yet facilitates charge carrier transport to the yellow emitter unit to enable additional exciplex formation. This complementary behavior of the spacer improves the blue emission properties concomitantly yielding reasonable yellow emission. The overall white light emission properties are enhanced, achieving CIE coordinates (0.36, 0.39) and color temperature (4643 K) similar to daylight. Employing intermolecular exciplex emission in OLEDs simplifies the device architecture via its dual functionality as a host and as an emitter.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"46"},"PeriodicalIF":5.4,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10721783/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photostimulation of lymphatic clearance of β-amyloid from mouse brain: a new strategy for the therapy of Alzheimer's disease.","authors":"Dongyu Li, Hao Lin, Silin Sun, Shaojun Liu, Zhang Liu, Yuening He, Jingtan Zhu, Jianyi Xu, Oxana Semyachkina-Glushkovskaya, Tingting Yu, Dan Zhu","doi":"10.1007/s12200-023-00099-8","DOIUrl":"https://doi.org/10.1007/s12200-023-00099-8","url":null,"abstract":"<p><p>Alzheimer's disease (AD) is an age-related neurodegenerative disorder that poses a significant burden on socio-economic and healthcare systems worldwide. However, the currently available therapy of AD is limited, and new strategies are needed to enhance the clearance of β-amyloid (Aβ) protein and improve cognitive function. Photobiomodulation (PBM) is a non-invasive and effective therapeutic method that has shown promise in treating various brain diseases. Here, we demonstrate that 1267-nm PBM significantly alleviates cognitive decline in the 5xFAD mouse model of AD and is safe as it does not induce a significant increase in cortical temperature. Moreover, with the combination of 3D tissue optical clearing imaging and automatic brain region segmentation, we show that PBM-mediated reductions of Aβ plaques in different subregions of prefrontal cortex and the hippocampus are different. The PBM-induced lymphatic clearance of Aβ from the brain is associated with improvement of memory and cognitive functions in 5xFAD mice. Our results suggest that the modulation of meningeal lymphatic vessels (MLVs) should play an important role in promoting Aβ clearance. Collectively, this pilot study demonstrates that PBM can safely accelerate lymphatic clearance of Aβ from the brain of 5xFAD mice, promoting improvement of neurocognitive status of AD animals suggesting that PBM can be an effective and bedside therapy for AD.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"45"},"PeriodicalIF":5.4,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10721782/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Local measurement of terahertz field-induced second harmonic generation in plasma filaments.","authors":"Kareem J Garriga Francis, Xi-Cheng Zhang","doi":"10.1007/s12200-023-00095-y","DOIUrl":"https://doi.org/10.1007/s12200-023-00095-y","url":null,"abstract":"<p><p>The concept of Terahertz Field-Induced Second Harmonic (TFISH) Generation is revisited to introduce a single-shot detection scheme based on third order nonlinearities. Focused specifically on the further development of THz plasma-based sources, we begin our research by reimagining the TFISH system to serve as a direct plasma diagnostic. In this work, an optical probe beam is used to mix directly with the strong ponderomotive current associated with laser-induced ionization. A four-wave mixing (FWM) process then generates a strong second-harmonic optical wave because of the mixing of the probe beam with the nonlinear current components oscillating at THz frequencies. The observed conversion efficiency is high enough that for the first time, the TFISH signal appears visible to the human eye. We perform spectral, spatial, and temporal analysis on the detected second-harmonic frequency and show its direct relationship to the nonlinear current. Further, a method to detect incoherent and coherent THz inside plasma filaments is devised using spatio-temporal couplings. The single-shot detection configurations are theoretically described using a combination of expanded FWM models with Kostenbauder and Gaussian Q-matrices. We show that the retrieved temporal traces for THz radiation from single- and two-color laser-induced air-plasma sources match theoretical descriptions very well. High temporal resolution is shown with a detection bandwidth limited only by the spatial extent of the probe laser beam. Large detection bandwidth and temporal characterization is shown for THz radiation confined to under-dense plasma filaments induced by < 100 fs lasers below the relativistic intensity limit.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"44"},"PeriodicalIF":5.4,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10719236/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Vapor growth of V-doped MoS<sub>2</sub> monolayers with enhanced B-exciton emission and broad spectral response.","authors":"Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li","doi":"10.1007/s12200-023-00097-w","DOIUrl":"10.1007/s12200-023-00097-w","url":null,"abstract":"<p><p>Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS<sub>2</sub>) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS<sub>2</sub> monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS<sub>2</sub> monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS<sub>2</sub>, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS<sub>2</sub> monolayers (with low doping concentration) were demonstrated. The V-doped MoS<sub>2</sub> monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"42"},"PeriodicalIF":5.4,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10703759/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138498212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu
{"title":"An all-silicon design of a high-efficiency broadband transmissive terahertz polarization convertor.","authors":"Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu","doi":"10.1007/s12200-023-00098-9","DOIUrl":"10.1007/s12200-023-00098-9","url":null,"abstract":"<p><p>Polarization, a fundamental behavior of electromagnetic waves, holds immense potential across diverse domains such as environmental monitoring, biomedicine, and ocean exploration. However, achieving efficient modulation of terahertz waves with wide operational bandwidth poses significant challenges. Here, we introduce an all-silicon polarization converter designed specifically to operate in the terahertz range of the electromagnetic spectrum. Simulation results demonstrate that the average conversion efficiency of cross-linear waves exceeds 80% across a wide frequency range spanning from 1.00 to 2.32 THz, with the highest conversion efficiency peaking at an impressive 99.97%. Additionally, our proposed structure facilitates linear-to-circular polarization conversion with an ellipticity of 1 at 0.85 THz. Furthermore, by rotating the cross-shaped microstructure, active control over arbitrary polarization states can be achieved. To summarize, the proposed structure offers remarkable flexibility and ease of integration, providing a reliable and practical solution for achieving broadband and efficient polarization conversion of terahertz waves.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"40"},"PeriodicalIF":5.4,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10700243/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138487297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhao Wang, Xiaolei Wen, Kai Zou, Yun Meng, Jinwei Zeng, Jian Wang, Huan Hu, Xiaolong Hu
{"title":"Enhancement of silicon sub-bandgap photodetection by helium-ion implantation.","authors":"Zhao Wang, Xiaolei Wen, Kai Zou, Yun Meng, Jinwei Zeng, Jian Wang, Huan Hu, Xiaolong Hu","doi":"10.1007/s12200-023-00096-x","DOIUrl":"10.1007/s12200-023-00096-x","url":null,"abstract":"<p><p>Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response. In this work, we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation, without affecting the transparency that is an important beneficial feature of this type of photodetectors. With an implantation dose of 1 × 10<sup>13</sup> ions/cm<sup>2</sup>, the minimal detectable optical power can be improved from - 33.2 to - 63.1 dBm, or, by 29.9 dB, at the wavelength of 1550 nm, and the photo-response at the same optical power (- 10 dBm) can be enhanced by approximately 18.8 dB. Our work provides a method for strategically modifying the intrinsic trade-off between transparency and strong photo-responses of this type of photodetectors.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"41"},"PeriodicalIF":5.4,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10700279/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138487298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Potassium ion pre-intercalated MnO<sub>2</sub> for aqueous multivalent ion batteries.","authors":"Zikang Xu, Ruiqi Ren, Hang Ren, Jingyuan Zhang, Jinyao Yang, Jiawen Qiu, Yizhou Zhang, Guoyin Zhu, Liang Huang, Shengyang Dong","doi":"10.1007/s12200-023-00093-0","DOIUrl":"10.1007/s12200-023-00093-0","url":null,"abstract":"<p><p>Manganese dioxide (MnO<sub>2</sub>), as a cathode material for multivalent ion (such as Mg<sup>2+</sup> and Al<sup>3+</sup>) storage, is investigated due to its high initial capacity. However, during multivalent ion insertion/extraction, the crystal structure of MnO<sub>2</sub> partially collapses, leading to fast capacity decay in few charge/discharge cycles. Here, through pre-intercalating potassium-ion (K<sup>+</sup>) into δ-MnO<sub>2</sub>, we synthesize a potassium ion pre-intercalated MnO<sub>2</sub>, K<sub>0.21</sub>MnO<sub>2</sub>·0.31H<sub>2</sub>O (KMO), as a reliable cathode material for multivalent ion batteries. The as-prepared KMO exhibits a high reversible capacity of 185 mAh/g at 1 A/g, with considerable rate performance and improved cycling stability in 1 mol/L MgSO<sub>4</sub> electrolyte. In addition, we observe that aluminum-ion (Al<sup>3+</sup>) can also insert into a KMO cathode. This work provides a valid method for modification of manganese-based oxides for aqueous multivalent ion batteries.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"39"},"PeriodicalIF":5.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692024/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138459518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A scheme for realizing nonreciprocal interlayer coupling in bilayer topological systems.","authors":"Xiaoxiao Wang, Ruizhe Gu, Yandong Li, Huixin Qi, Xiaoyong Hu, Xingyuan Wang, Qihuang Gong","doi":"10.1007/s12200-023-00094-z","DOIUrl":"10.1007/s12200-023-00094-z","url":null,"abstract":"<p><p>Nonreciprocal interlayer coupling is difficult to practically implement in bilayer non-Hermitian topological photonic systems. In this work, we identify a similarity transformation between the Hamiltonians of systems with nonreciprocal interlayer coupling and on-site gain/loss. The similarity transformation is widely applicable, and we show its application in one- and two-dimensional bilayer topological systems as examples. The bilayer non-Hermitian system with nonreciprocal interlayer coupling, whose topological number can be defined using the gauge-smoothed Wilson loop, is topologically equivalent to the bilayer system with on-site gain/loss. We also show that the topological number of bilayer non-Hermitian C<sub>6v</sub>-typed domain-induced topological interface states can be defined in the same way as in the case of the bilayer non-Hermitian Su-Schrieffer-Heeger model. Our results show the relations between two microscopic provenances of the non-Hermiticity and provide a universal and convenient scheme for constructing and studying nonreciprocal interlayer coupling in bilayer non-Hermitian topological systems. This scheme is useful for observation of non-Hermitian skin effect in three-dimensional systems.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"38"},"PeriodicalIF":5.4,"publicationDate":"2023-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10682335/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138444464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}