Frontiers of Optoelectronics最新文献_第10页

Organic photodiodes: device engineering and applications. 有机光电二极管:器件工程与应用。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-12-19 DOI: 10.1007/s12200-022-00049-w

Tong Shan, Xiao Hou, Xiaokuan Yin, Xiaojun Guo

{"title":"Organic photodiodes: device engineering and applications.","authors":"Tong Shan, Xiao Hou, Xiaokuan Yin, Xiaojun Guo","doi":"10.1007/s12200-022-00049-w","DOIUrl":"https://doi.org/10.1007/s12200-022-00049-w","url":null,"abstract":"Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"49"},"PeriodicalIF":5.4,"publicationDate":"2022-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763529/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9183952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Advanced functional nanofibers: strategies to improve performance and expand functions. 高级功能纳米纤维：提高性能和扩展功能的策略。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-12-19 eCollection Date: 2022-12-01 DOI: 10.1007/s12200-022-00051-2

Xinyu Chen, Honghao Cao, Yue He, Qili Zhou, Zhangcheng Li, Wen Wang, Yu He, Guangming Tao, Chong Hou

{"title":"Advanced functional nanofibers: strategies to improve performance and expand functions.","authors":"Xinyu Chen, Honghao Cao, Yue He, Qili Zhou, Zhangcheng Li, Wen Wang, Yu He, Guangming Tao, Chong Hou","doi":"10.1007/s12200-022-00051-2","DOIUrl":"10.1007/s12200-022-00051-2","url":null,"abstract":"Nanofibers have a wide range of applications in many fields such as energy generation and storage, environmental sensing and treatment, biomedical and health, thanks to their large specific surface area, excellent flexibility, and superior mechanical properties. With the expansion of application fields and the upgrade of application requirements, there is an inevitable trend of improving the performance and functions of nanofibers. Over the past few decades, numerous studies have demonstrated how nanofibers can be adapted to more complex needs through modifications of their structures, materials, and assembly. Thus, it is necessary to systematically review the field of nanofibers in which new ideas and technologies are emerging. Here we summarize the recent advanced strategies to improve the performances and expand the functions of nanofibers. We first introduce the common methods of preparing nanofibers, then summarize the advances in the field of nanofibers, especially up-to-date strategies for further enhancing their functionalities. We classify these strategies into three categories: design of nanofiber structures, tuning of nanofiber materials, and improvement of nanofibers assemblies. Finally, the optimization methods, materials, application areas, and fabrication methods are summarized, and existing challenges and future research directions are discussed. We hope this review can provide useful guidance for subsequent related work.Graphical abstract: ","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"50"},"PeriodicalIF":5.4,"publicationDate":"2022-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9761053/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9803864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dissipative Kerr single soliton generation with extremely high probability via spectral mode depletion. 耗散克尔单孤子产生具有极高的概率通过谱模式损耗。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-12-01 DOI: 10.1007/s12200-022-00047-y

Boqing Zhang, Nuo Chen, Xinda Lu, Yuntian Chen, Xinliang Zhang, Jing Xu

{"title":"Dissipative Kerr single soliton generation with extremely high probability via spectral mode depletion.","authors":"Boqing Zhang, Nuo Chen, Xinda Lu, Yuntian Chen, Xinliang Zhang, Jing Xu","doi":"10.1007/s12200-022-00047-y","DOIUrl":"https://doi.org/10.1007/s12200-022-00047-y","url":null,"abstract":"Optical Kerr solitons generation based on microresonators is essential in nonlinear optics. Among various soliton generation processes, the single soliton generation plays a pivotal role since it ensures rigorous mode-locking on each comb line whose interval equals the free spectral range (FSR) of the microresonator. Current studies show that single soliton generation is challenging due to cavity instability. Here, we propose a new method to greatly improve single soliton generation probalility in the anomalous group velocity dispersion (GVD) regime in a micro-ring resonator based on silicon nitride. The improvement is realized by introducing mode depletion through an integrated coupled filter. It is convenient to introduce controllable single mode depletion in a micro-ring resonator by adjusting the response function of a coupled filter. We show that spectral mode depletion (SMD) can significantly boost the single soliton generation probability. The effect of SMD on the dynamics of optical Kerr solitons generation are also discussed. The proposed method offers a straightforward and simple way to facilitate robust single soliton generation, and will have an impact on the research development in optical Kerr soliton generation and on-chip optical frequency mode manipulation.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"48"},"PeriodicalIF":5.4,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756270/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9189644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Copper-based metal halides for X-ray and photodetection. x射线和光探测用铜基金属卤化物。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-11-21 DOI: 10.1007/s12200-022-00048-x

Fu Qiu, Yutian Lei, Zhiwen Jin

引用次数: 1

Recent advances in developing high-performance organic hole transporting materials for inverted perovskite solar cells. 倒置钙钛矿太阳能电池中高性能有机空穴传输材料的研究进展。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-11-17 DOI: 10.1007/s12200-022-00050-3

Xianglang Sun, Zonglong Zhu, Zhong'an Li

{"title":"Recent advances in developing high-performance organic hole transporting materials for inverted perovskite solar cells.","authors":"Xianglang Sun, Zonglong Zhu, Zhong'an Li","doi":"10.1007/s12200-022-00050-3","DOIUrl":"https://doi.org/10.1007/s12200-022-00050-3","url":null,"abstract":"Inverted perovskite solar cells (PVSCs) have recently made exciting progress, showing high power conversion efficiencies (PCEs) of 25% in single-junction devices and 30.5% in silicon/perovskite tandem devices. The hole transporting material (HTM) in an inverted PVSC plays an important role in determining the device performance, since it not only extracts/transports holes but also affects the growth and crystallization of perovskite film. Currently, polymer and self-assembled monolayer (SAM) have been considered as two types of most promising HTM candidates for inverted PVSCs owing to their high PCEs, high stability and adaptability to large area devices. In this review, recent encouraging progress of high-performance polymer and SAM-based HTMs is systematically reviewed and summarized, including molecular design strategies and the correlation between molecular structure and device performance. We hope this review can inspire further innovative development of HTMs for wide applications in highly efficient and stable inverted PVSCs and the tandem devices.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"46"},"PeriodicalIF":5.4,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756258/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10528945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Broadband optical frequency comb generation based on single electro-absorption modulation driven by radio frequency coupled signals. 基于射频耦合信号驱动的单电吸收调制的宽带光频梳生成。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-11-14 DOI: 10.1007/s12200-022-00045-0

Pan Jiang, Peili Li, Yiming Fan

{"title":"Broadband optical frequency comb generation based on single electro-absorption modulation driven by radio frequency coupled signals.","authors":"Pan Jiang, Peili Li, Yiming Fan","doi":"10.1007/s12200-022-00045-0","DOIUrl":"https://doi.org/10.1007/s12200-022-00045-0","url":null,"abstract":"Broadband optical frequency comb (OFC) generation based on a single electro-absorption modulator (EAM) is proposed. The EAM is driven by a radio frequency (RF) multi-frequency signal generated by a multiplication coupler composed of an electrical power splitter and an arithmetic circuit. Thus the number of comb-lines of the generated OFC can be increased. A complete theoretical model of OFC generation by an EAM driven by nth power of the RF source is established, and the performance of the OFC is analyzed by using OptiSystem software. The results show that, the number of comb-lines of the OFC is positively correlated with the number of multiplication of the RF source signal. The frequency spacing of the comb-lines is twice the frequency of the RF source signal and is tunable by adjusting the frequency of the RF source signal. Increasing chirp factor and modulation index of EAM could increase the number of comb-lines of the generated OFC. The amplitude of the RF source signal had little impact on the flatness of the OFC and the average OFC power. The scheme developed is not only simple and low-cost, but also can produce a large number of comb-lines.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"45"},"PeriodicalIF":5.4,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756252/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9080164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A sensitization strategy for highly efficient blue fluorescent organic light-emitting diodes. 一种高效蓝色荧光有机发光二极管的敏化策略。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-11-10 DOI: 10.1007/s12200-022-00046-z

Yalei Duan, Runda Guo, Yaxiong Wang, Kaiyuan Di, Lei Wang

{"title":"A sensitization strategy for highly efficient blue fluorescent organic light-emitting diodes.","authors":"Yalei Duan, Runda Guo, Yaxiong Wang, Kaiyuan Di, Lei Wang","doi":"10.1007/s12200-022-00046-z","DOIUrl":"https://doi.org/10.1007/s12200-022-00046-z","url":null,"abstract":"Highly efficient blue fluorescent materials have recently attracted great interest for organic light-emitting diode (OLED) application. Here, two new pyrene based organic molecules consisting of a highly rigid skeleton, namely SPy and DPy, are developed. These two blue light emitters exhibit excellent thermal stability. The experiment reveals that the full-width at half-maximum (FWHM) of the emission spectrum can be tuned by introducing different amounts of 9,9-diphenyl-N-phenyl-9H-fluoren-2-amine on pyrene units. The FWHM of the emission spectrum is only 37 nm in diluted toluene solution for DPy. Furthermore, highly efficient blue OLEDs are obtained by thermally activated delayed fluorescence (TADF) sensitization strategy. The blue fluorescent OLEDs utilizing DPy as emitters achieve a maximum external quantum efficiency (EQE) of 10.4% with the electroluminescence (EL) peak/FWHM of 480 nm/49 nm. Particularly, the EQE of DPy-based device is boosted from 2.6% in non-doped device to 10.4% in DMAc-DPS TADF sensitized fluorescence (TSF) device, which is a 400% enhancement. Therefore, this work demonstrates that the TSF strategy is promising for highly efficient fluorescent OLEDs application in wide-color-gamut display field.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"44"},"PeriodicalIF":5.4,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756245/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10528943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dark current modeling of thick perovskite X-ray detectors. 厚钙钛矿x射线探测器的暗电流建模。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-10-31 DOI: 10.1007/s12200-022-00044-1

Shan Zhao, Xinyuan Du, Jincong Pang, Haodi Wu, Zihao Song, Zhiping Zheng, Ling Xu, Jiang Tang, Guangda Niu

{"title":"Dark current modeling of thick perovskite X-ray detectors.","authors":"Shan Zhao, Xinyuan Du, Jincong Pang, Haodi Wu, Zihao Song, Zhiping Zheng, Ling Xu, Jiang Tang, Guangda Niu","doi":"10.1007/s12200-022-00044-1","DOIUrl":"https://doi.org/10.1007/s12200-022-00044-1","url":null,"abstract":"Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10-9 A/cm2 for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"43"},"PeriodicalIF":5.4,"publicationDate":"2022-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756221/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10530601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications. 用于中波段太阳能电池的i型石墨烯/硅量子点超晶格的设计与仿真。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-10-28 DOI: 10.1007/s12200-022-00043-2

Masumeh Sarkhoush, Hassan Rasooli Saghai, Hadi Soofi

{"title":"Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications.","authors":"Masumeh Sarkhoush, Hassan Rasooli Saghai, Hadi Soofi","doi":"10.1007/s12200-022-00043-2","DOIUrl":"https://doi.org/10.1007/s12200-022-00043-2","url":null,"abstract":"Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater-Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (Jsc) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records Jsc = 16.9067 mA/cm2 and G = 1.48943 × 1028 m-3⋅s-1, the graphene/Si QD IBSC with 2 layers of QDs presents Jsc = 36.4193 mA/cm2 and G = 7.94192 × 1028 m-3⋅s-1, offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"42"},"PeriodicalIF":5.4,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756208/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9094889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p-n junction. 垂直MoS2/WSe2 p-n结的范德华外延生长和光电子学。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2022-10-11 DOI: 10.1007/s12200-022-00041-4

Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan

{"title":"Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p-n junction.","authors":"Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan","doi":"10.1007/s12200-022-00041-4","DOIUrl":"https://doi.org/10.1007/s12200-022-00041-4","url":null,"abstract":"Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"15 1","pages":"41"},"PeriodicalIF":5.4,"publicationDate":"2022-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756242/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9080171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6