Optical engineering of infrared PbS CQD photovoltaic cells for wireless optical power transfer systems.

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mengqiong Zhu, Yuanbo Zhang, Shuaicheng Lu, Zijun Wang, Junbing Zhou, Wenkai Ma, Ruinan Zhu, Guanyuan Chen, Jianbing Zhang, Liang Gao, Jiancan Yu, Pingqi Gao, Jiang Tang
{"title":"Optical engineering of infrared PbS CQD photovoltaic cells for wireless optical power transfer systems.","authors":"Mengqiong Zhu,&nbsp;Yuanbo Zhang,&nbsp;Shuaicheng Lu,&nbsp;Zijun Wang,&nbsp;Junbing Zhou,&nbsp;Wenkai Ma,&nbsp;Ruinan Zhu,&nbsp;Guanyuan Chen,&nbsp;Jianbing Zhang,&nbsp;Liang Gao,&nbsp;Jiancan Yu,&nbsp;Pingqi Gao,&nbsp;Jiang Tang","doi":"10.1007/s12200-023-00069-0","DOIUrl":null,"url":null,"abstract":"<p><p>Infrared photovoltaic cells (IRPCs) have attracted considerable attention for potential applications in wireless optical power transfer (WOPT) systems. As an efficient fiber-integrated WOPT system typically uses a 1550 nm laser beam, it is essential to tune the peak conversion efficiency of IRPCs to this wavelength. However, IRPCs based on lead sulfide (PbS) colloidal quantum dots (CQDs) with an excitonic peak of 1550 nm exhibit low short circuit current (J<sub>sc</sub>) due to insufficient absorption under monochromatic light illumination. Here, we propose comprehensive optical engineering to optimize the device structure of IRPCs based on PbS CQDs, for 1550 nm WOPT systems. The absorption by the device is enhanced by improving the transmittance of tin-doped indium oxide (ITO) in the infrared region and by utilizing the optical resonance effect in the device. Therefore, the optimized device exhibited a high short circuit current density of 37.65 mA/cm<sup>2</sup> under 1 sun (AM 1.5G) solar illumination and 11.91 mA/cm<sup>2</sup> under 1550 nm illumination 17.3 mW/cm<sup>2</sup>. Furthermore, the champion device achieved a record high power conversion efficiency (PCE) of 7.17% under 1 sun illumination and 10.29% under 1550 nm illumination. The PbS CQDs IRPCs under 1550 nm illumination can even light up a liquid crystal display (LCD), demonstrating application prospects in the future.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"15"},"PeriodicalIF":4.1000,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10271996/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-023-00069-0","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Infrared photovoltaic cells (IRPCs) have attracted considerable attention for potential applications in wireless optical power transfer (WOPT) systems. As an efficient fiber-integrated WOPT system typically uses a 1550 nm laser beam, it is essential to tune the peak conversion efficiency of IRPCs to this wavelength. However, IRPCs based on lead sulfide (PbS) colloidal quantum dots (CQDs) with an excitonic peak of 1550 nm exhibit low short circuit current (Jsc) due to insufficient absorption under monochromatic light illumination. Here, we propose comprehensive optical engineering to optimize the device structure of IRPCs based on PbS CQDs, for 1550 nm WOPT systems. The absorption by the device is enhanced by improving the transmittance of tin-doped indium oxide (ITO) in the infrared region and by utilizing the optical resonance effect in the device. Therefore, the optimized device exhibited a high short circuit current density of 37.65 mA/cm2 under 1 sun (AM 1.5G) solar illumination and 11.91 mA/cm2 under 1550 nm illumination 17.3 mW/cm2. Furthermore, the champion device achieved a record high power conversion efficiency (PCE) of 7.17% under 1 sun illumination and 10.29% under 1550 nm illumination. The PbS CQDs IRPCs under 1550 nm illumination can even light up a liquid crystal display (LCD), demonstrating application prospects in the future.

Abstract Image

Abstract Image

Abstract Image

无线光功率传输系统红外PbS CQD光伏电池的光学工程。
红外光伏电池(IRPCs)在无线光功率传输(WOPT)系统中的潜在应用引起了人们的广泛关注。由于高效的光纤集成WOPT系统通常使用1550 nm的激光束,因此将irpc的峰值转换效率调整到该波长是至关重要的。然而,基于硫化铅(PbS)胶体量子点(CQDs)的IRPCs在单色光照射下由于吸收不足而表现出较低的短路电流(Jsc),其激子峰为1550 nm。在此,我们提出了综合光学工程来优化基于PbS CQDs的IRPCs器件结构,用于1550 nm WOPT系统。通过提高锡掺杂氧化铟(ITO)在红外区的透过率和利用器件中的光共振效应,增强了器件的吸收。因此,优化后的器件在1个太阳(AM 1.5G)光照下的短路电流密度为37.65 mA/cm2,在1550 nm光照17.3 mW/cm2下的短路电流密度为11.91 mA/cm2。此外,冠军器件实现了创纪录的高功率转换效率(PCE),在1太阳照明下为7.17%,在1550 nm照明下为10.29%。在1550nm光照下,PbS CQDs IRPCs甚至可以照亮液晶显示器(LCD),显示出未来的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信