Frontiers of Optoelectronics最新文献_第6页

Role of chloride on the instability of blue emitting mixed-halide perovskites. 氯化物对蓝光混合卤化物钙钛矿不稳定性的影响。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-17 DOI: 10.1007/s12200-023-00088-x

Max Karlsson, Jiajun Qin, Kaifeng Niu, Xiyu Luo, Johanna Rosen, Jonas Björk, Lian Duan, Weidong Xu, Feng Gao

{"title":"Role of chloride on the instability of blue emitting mixed-halide perovskites.","authors":"Max Karlsson, Jiajun Qin, Kaifeng Niu, Xiyu Luo, Johanna Rosen, Jonas Björk, Lian Duan, Weidong Xu, Feng Gao","doi":"10.1007/s12200-023-00088-x","DOIUrl":"10.1007/s12200-023-00088-x","url":null,"abstract":"Although perovskite light-emitting diodes (PeLEDs) have seen unprecedented development in device efficiency over the past decade, they suffer significantly from poor operational stability. This is especially true for blue PeLEDs, whose operational lifetime remains orders of magnitude behind their green and red counterparts. Here, we systematically investigate this efficiency-stability discrepancy in a series of green- to blue-emitting PeLEDs based on mixed Br/Cl-perovskites. We find that chloride incorporation, while having only a limited impact on efficiency, detrimentally affects device stability even in small amounts. Device lifetime drops exponentially with increasing Cl-content, accompanied by an increased rate of change in electrical properties during operation. We ascribe this phenomenon to an increased mobility of halogen ions in the mixed-halide lattice due to an increased chemically and structurally disordered landscape with reduced migration barriers. Our results indicate that the stability enhancement for PeLEDs might require different strategies from those used for improving efficiency.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"37"},"PeriodicalIF":5.4,"publicationDate":"2023-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10656409/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136397206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Localized in-situ deposition: a new dimension to control in fabricating surface micro/nano structures via ultrafast laser ablation. 局部原位沉积:超快激光烧蚀制备表面微纳结构的一个新的控制维度。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-17 DOI: 10.1007/s12200-023-00092-1

Peixun Fan, Guochen Jiang, Xinyu Hu, Lizhong Wang, Hongjun Zhang, Minlin Zhong

{"title":"Localized in-situ deposition: a new dimension to control in fabricating surface micro/nano structures via ultrafast laser ablation.","authors":"Peixun Fan, Guochen Jiang, Xinyu Hu, Lizhong Wang, Hongjun Zhang, Minlin Zhong","doi":"10.1007/s12200-023-00092-1","DOIUrl":"10.1007/s12200-023-00092-1","url":null,"abstract":"Controllable fabrication of surface micro/nano structures is the key to realizing surface functionalization for various applications. As a versatile approach, ultrafast laser ablation has been widely studied for surface micro/nano structuring. Increasing research efforts in this field have been devoted to gaining more control over the fabrication processes to meet the increasing need for creation of complex structures. In this paper, we focus on the in-situ deposition process following the plasma formation under ultrafast laser ablation. From an overview perspective, we firstly summarize the different roles that plasma plumes, from pulsed laser ablation of solids, play in different laser processing approaches. Then, the distinctive in-situ deposition process within surface micro/nano structuring is highlighted. Our experimental work demonstrated that the in-situ deposition during ultrafast laser surface structuring can be controlled as a localized micro-additive process to pile up secondary ordered structures, through which a unique kind of hierarchical structure with fort-like bodies sitting on top of micro cone arrays were fabricated as a showcase. The revealed laser-matter interaction mechanism can be inspiring for the development of new ultrafast laser fabrication approaches, adding a new dimension and more flexibility in controlling the fabrication of functional surface micro/nano structures.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"36"},"PeriodicalIF":5.4,"publicationDate":"2023-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10656395/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136397205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the growth mechanism of a self-assembled and ordered multi-dimensional heterojunction at atomic resolution. 原子分辨率下自组装有序多维异质结生长机理的研究。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-16 DOI: 10.1007/s12200-023-00091-2

Zunyu Liu, Chaoyu Zhao, Shuangfeng Jia, Weiwei Meng, Pei Li, Shuwen Yan, Yongfa Cheng, Jinshui Miao, Lei Zhang, Yihua Gao, Jianbo Wang, Luying Li

{"title":"Study of the growth mechanism of a self-assembled and ordered multi-dimensional heterojunction at atomic resolution.","authors":"Zunyu Liu, Chaoyu Zhao, Shuangfeng Jia, Weiwei Meng, Pei Li, Shuwen Yan, Yongfa Cheng, Jinshui Miao, Lei Zhang, Yihua Gao, Jianbo Wang, Luying Li","doi":"10.1007/s12200-023-00091-2","DOIUrl":"10.1007/s12200-023-00091-2","url":null,"abstract":"Multi-dimensional heterojunction materials have attracted much attention due to their intriguing properties, such as high efficiency, wide band gap regulation, low dimensional limitation, versatility and scalability. To further improve the performance of materials, researchers have combined materials with various dimensions using a wide variety of techniques. However, research on growth mechanism of such composite materials is still lacking. In this paper, the growth mechanism of multi-dimensional heterojunction composite material is studied using quasi-two-dimensional (quasi-2D) antimonene and quasi-one-dimensional (quasi-1D) antimony sulfide as examples. These are synthesized by a simple thermal injection method. It is observed that the consequent nanorods are oriented along six-fold symmetric directions on the nanoplate, forming ordered quasi-1D/quasi-2D heterostructures. Comprehensive transmission electron microscopy (TEM) characterizations confirm the chemical information and reveal orientational relationship between Sb2S3 nanorods and the Sb nanoplate as substrate. Further density functional theory calculations indicate that interfacial binding energy is the primary deciding factor for the self-assembly of ordered structures. These details may fill the gaps in the research on multi-dimensional composite materials with ordered structures, and promote their future versatile applications.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"35"},"PeriodicalIF":5.4,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10654331/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136397135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic fluorescent probes for live-cell super-resolution imaging. 用于活细胞超分辨率成像的有机荧光探针。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-10 DOI: 10.1007/s12200-023-00090-3

Xinxin Duan, Meng Zhang, Yu-Hui Zhang

引用次数: 0

Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation. 3.5μm掺铒ZBLAN光纤激光器的泵浦量子效率优化。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-09 DOI: 10.1007/s12200-023-00089-w

Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao

{"title":"Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation.","authors":"Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao","doi":"10.1007/s12200-023-00089-w","DOIUrl":"10.1007/s12200-023-00089-w","url":null,"abstract":"976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (4F9/2 → 4F7/2) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"33"},"PeriodicalIF":5.4,"publicationDate":"2023-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10635972/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71521160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the performance of thin-film VCSELs on composite metal substrate. 薄膜VCSEL在复合金属衬底上的性能研究。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-08 DOI: 10.1007/s12200-023-00086-z

William Anderson Lee Sanchez, Shreekant Sinha, Po-Yu Wang, Ray-Hua Horng

{"title":"Study on the performance of thin-film VCSELs on composite metal substrate.","authors":"William Anderson Lee Sanchez, Shreekant Sinha, Po-Yu Wang, Ray-Hua Horng","doi":"10.1007/s12200-023-00086-z","DOIUrl":"10.1007/s12200-023-00086-z","url":null,"abstract":"Thin film p-side up vertical-cavity surface-emitting lasers (VCSELs) with 940 nm wavelength on a composite metal (Copper/Invar/Copper; CIC) substrate has been demonstrated by twice-bonding transfer and substrate removing techniques. The CIC substrate is a sandwich structure with a 10 µm thick Copper (Cu) layer/30 µm thick Invar layer/10 µm thick Cu layer. The Invar layer was composed of Iron (Fe) and Nickel (Ni) with a proportion of 70:30. The thermal expansion coefficient of the composite CIC metal can match that of the GaAs substrate. It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking. At 1 mA current, the top-emitting VCSEL/GaAs and thin-film VCSEL/CIC had a voltage of 1.39 and 1.37 V, respectively. The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW, respectively. The 50 µm thick CIC substrate can play a good heat dissipation function, which results in improving the electrical and optical characteristics of thin film VCSELs/CIC. The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs. The obtained data suggested that VCSELs on a composite metal substrate not only affected significantly the characteristics of thin film VCSEL, but also improved considerably the device thermal performance.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"32"},"PeriodicalIF":5.4,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10630174/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71480722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic tapered Yb-doped fiber chirped pulse amplifier delivering 126 μJ and 207 MW femtosecond laser with near diffraction-limited beam quality. 单片锥形掺镱光纤啁啾脉冲放大器，输出126μJ和207MW飞秒激光，光束质量接近衍射极限。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-31 DOI: 10.1007/s12200-023-00087-y

Tao Wang, Bo Ren, Can Li, Kun Guo, Jinyong Leng, Pu Zhou

{"title":"Monolithic tapered Yb-doped fiber chirped pulse amplifier delivering 126 μJ and 207 MW femtosecond laser with near diffraction-limited beam quality.","authors":"Tao Wang, Bo Ren, Can Li, Kun Guo, Jinyong Leng, Pu Zhou","doi":"10.1007/s12200-023-00087-y","DOIUrl":"https://doi.org/10.1007/s12200-023-00087-y","url":null,"abstract":"In this work, a high-energy and high peak power chirped pulse amplification system with near diffraction-limited beam quality based on tapered confined-doped fiber (TCF) is experimentally demonstrated. The TCF has a core numerical aperture of 0.07 with core/cladding diameter of 35/250 µm at the thin end and 56/400 μm at the thick end. With a backward-pumping configuration, a maximum single pulse energy of 177.9 μJ at a repetition rate of 504 kHz is realized, corresponding to an average power of 89.7 W. Through partially compensating for the accumulated nonlinear phase during the amplification process via adjusting the high order dispersion of the stretching chirped fiber Bragg grating, the duration of the amplified pulse is compressed to 401 fs with a pulse energy of 126.3 μJ and a peak power of 207 MW, which to the best of our knowledge represents the highest peak power ever reported from a monolithic ultrafast fiber laser. At the highest energy, the polarization extinction ratio and the M2 factor were respectively measured to be ~ 19 dB and 1.20. In addition, the corresponding intensity noise properties as well as the short- and long-term stability were also examined, verifying a stable operation of the system. It is believed that the demonstrated laser source could find important applications in, for example, advanced manufacturing and photomedicine.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"30"},"PeriodicalIF":5.4,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10618150/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71422954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Upconversion luminescence and optical thermometry behaviors of Yb³⁺ and Ho³⁺ co-doped GYTO crystal. Yb3+和Ho3+共掺杂GYTO晶体的上转换发光和光学测温行为。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-31 DOI: 10.1007/s12200-023-00083-2

Chuancheng Zhang, Shoujun Ding, Miaomiao Wang, Hao Ren, Xubing Tang, Yong Zou, Renqin Dou, Wenpeng Liu

{"title":"Upconversion luminescence and optical thermometry behaviors of Yb3+ and Ho3+ co-doped GYTO crystal.","authors":"Chuancheng Zhang, Shoujun Ding, Miaomiao Wang, Hao Ren, Xubing Tang, Yong Zou, Renqin Dou, Wenpeng Liu","doi":"10.1007/s12200-023-00083-2","DOIUrl":"https://doi.org/10.1007/s12200-023-00083-2","url":null,"abstract":"Optical thermometry based on the upconversion (UC) luminescence intensity ratio (LIR) has attracted considerable attention because of its feasibility for achievement of accurate non-contact temperature measurement. Compared with traditional UC phosphors, optical thermometry based on UC single crystals can achieve faster response and higher sensitivity due to the stability and high thermal conductivity of the single crystals. In this study, a high-quality 5 at% Yb3+ and 1 at% Ho3+ co-doped Gd0.74Y0.2TaO4 single crystal was grown by the Czochralski (Cz) method, and the structure of the as-grown crystal was characterized. Importantly, the UC luminescent properties and optical thermometry behaviors of this crystal were revealed. Under 980 nm wavelength excitation, green and red UC luminescence lines at 550 and 650 nm and corresponding to the 5F4/5S2 → 5I8 and 5F5 → 5I8 transitions of Ho3+, respectively, were observed. The green and red UC emissions involved a two-photon mechanism, as evidenced by the analysis of power-dependent UC emission spectra. The temperature-dependent UC emission spectra were measured in the temperature range of 330-660 K to assess the optical temperature sensing behavior. At 660 K, the maximum relative sensing sensitivity (Sr) was determined to be 0.0037 K-1. These results highlight the significant potential of Yb,Ho:GYTO single crystal for optical temperature sensors.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"31"},"PeriodicalIF":5.4,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10618148/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71422955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multimode sensing based on optical microcavities. 基于光学微腔的多模传感。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-27 DOI: 10.1007/s12200-023-00084-1

Yanran Wu, Bing Duan, Changhong Li, Daquan Yang

引用次数: 0

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics. 用于高效PbSe胶体量子点光伏的ZnO电子传输层的氟化物钝化。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-27 DOI: 10.1007/s12200-023-00082-3

Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang

{"title":"Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics.","authors":"Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang","doi":"10.1007/s12200-023-00082-3","DOIUrl":"10.1007/s12200-023-00082-3","url":null,"abstract":"Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"28"},"PeriodicalIF":5.4,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611680/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54228759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0