Frontiers of Optoelectronics最新文献_第7页

Transient breathing dynamics during extinction of dissipative solitons in mode-locked fiber lasers. 模式锁定光纤激光器中耗散孤子消亡过程中的瞬态呼吸动力学。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2024-01-19 DOI: 10.1007/s12200-024-00106-6

Zichuan Yuan, Si Luo, Ke Dai, Xiankun Yao, Chenning Tao, Qiang Ling, Yusheng Zhang, Zuguang Guan, Daru Chen, Yudong Cui

{"title":"Transient breathing dynamics during extinction of dissipative solitons in mode-locked fiber lasers.","authors":"Zichuan Yuan, Si Luo, Ke Dai, Xiankun Yao, Chenning Tao, Qiang Ling, Yusheng Zhang, Zuguang Guan, Daru Chen, Yudong Cui","doi":"10.1007/s12200-024-00106-6","DOIUrl":"10.1007/s12200-024-00106-6","url":null,"abstract":"The utilization of the dispersive Fourier transformation approach has enabled comprehensive observation of the birth process of dissipative solitons in fiber lasers. However, there is still a dearth of deep understanding regarding the extinction process of dissipative solitons. In this study, we have utilized a combination of experimental and numerical techniques to thoroughly examine the breathing dynamics of dissipative solitons during the extinction process in an Er-doped mode-locked fiber laser. The results demonstrate that the transient breathing dynamics have a substantial impact on the extinction stage of both steady-state and breathing-state dissipative solitons. The duration of transient breathing exhibits a high degree of sensitivity to variations in pump power. Numerical simulations are utilized to produce analogous breathing dynamics within the framework of a model that integrates equations characterizing the population inversion in a mode-locked laser. These results corroborate the role of Q-switching instability in the onset of breathing oscillations. Furthermore, these findings offer new possibilities for the advancement of various operational frameworks for ultrafast lasers.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"17 1","pages":"2"},"PeriodicalIF":5.4,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10798939/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139491257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High power tunable Raman fiber laser at 1.2 μm waveband. 1.2 μm 波段的高功率可调谐拉曼光纤激光器。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2024-01-15 DOI: 10.1007/s12200-024-00105-7

Yang Zhang, Jiangming Xu, Junrui Liang, Jun Ye, Sicheng Li, Xiaoya Ma, Zhiyong Pan, Jinyong Leng, Pu Zhou

{"title":"High power tunable Raman fiber laser at 1.2 μm waveband.","authors":"Yang Zhang, Jiangming Xu, Junrui Liang, Jun Ye, Sicheng Li, Xiaoya Ma, Zhiyong Pan, Jinyong Leng, Pu Zhou","doi":"10.1007/s12200-024-00105-7","DOIUrl":"10.1007/s12200-024-00105-7","url":null,"abstract":"Development of a high power fiber laser at special waveband, which is difficult to achieve by conventional rare-earth-doped fibers, is a significant challenge. One of the most common methods for achieving lasing at special wavelength is Raman conversion. Phosphorus-doped fiber (PDF), due to the phosphorus-related large frequency shift Raman peak at 40 THz, is a great choice for large frequency shift Raman conversion. Here, by adopting 150 m large mode area triple-clad PDF as Raman gain medium, and a novel wavelength-selective feedback mechanism to suppress the silica-related Raman emission, we build a high power cladding-pumped Raman fiber laser at 1.2 μm waveband. A Raman signal with power up to 735.8 W at 1252.7 nm is obtained. To the best of our knowledge, this is the highest output power ever reported for fiber lasers at 1.2 μm waveband. Moreover, by tuning the wavelength of the pump source, a tunable Raman output of more than 450 W over a wavelength range of 1240.6-1252.7 nm is demonstrated. This work proves PDF's advantage in high power large frequency shift Raman conversion with a cladding pump scheme, thus providing a good solution for a high power laser source at special waveband.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"17 1","pages":"1"},"PeriodicalIF":5.4,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10789707/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139466441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient and accurate numerical-projection of electromagnetic multipoles for scattering objects. 对散射物体的电磁多极进行高效、精确的数值投影。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-29 DOI: 10.1007/s12200-023-00102-2

Wenfei Guo, Zizhe Cai, Zhongfei Xiong, Weijin Chen, Yuntian Chen

引用次数: 0

Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells. 通过盐酸缩氨基脲添加剂抑制深电平陷阱，实现高性能锡基过氧化物太阳能电池。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-29 DOI: 10.1007/s12200-023-00103-1

Wenbo Jia, Yi Jing, Han Zhang, Baoyan Tian, Huabo Huang, Changlei Wang, Ligang Xu

{"title":"Suppression of deep-level traps via semicarbazide hydrochloride additives for high-performance tin-based perovskite solar cells.","authors":"Wenbo Jia, Yi Jing, Han Zhang, Baoyan Tian, Huabo Huang, Changlei Wang, Ligang Xu","doi":"10.1007/s12200-023-00103-1","DOIUrl":"10.1007/s12200-023-00103-1","url":null,"abstract":"Tin perovskites with exemplary optoelectronic properties offer potential application in lead-free perovskite solar cells. However, Sn vacancies and undercoordinated Sn ions on the tin perovskite surfaces can create deep-level traps, leading to non-radiative recombination and absorption of nucleophilic O2 molecules, impeding further device efficiency and stability. Here, in this study, a new additive of semicarbazide hydrochloride (SEM-HCl) with a N-C=O functional group was introduced into the perovskite precursor to fabricate high-quality films with a low concentration of deep-level trap densities. This, in turn, serves to prevent undesirable interaction between photogenerated carriers and adsorbed oxygen molecules in the device's operational environment, ultimately reducing the proliferation of superoxide entities. As the result, the SEM-HCl-derived devices show a peak efficiency of 10.9% with improved device stability. These unencapsulated devices maintain almost 100% of their initial efficiencies after working for 100 h under continuous AM1.5 illumination conditions.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"47"},"PeriodicalIF":5.4,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10754768/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139058207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Blue emitting exciplex for yellow and white organic light-emitting diodes. 用于黄色和白色有机发光二极管的蓝色发光复合物。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-14 DOI: 10.1007/s12200-023-00101-3

Kavya Rajeev, C K Vipin, Anjali K Sajeev, Atul Shukla, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, K N Narayanan Unni

{"title":"Blue emitting exciplex for yellow and white organic light-emitting diodes.","authors":"Kavya Rajeev, C K Vipin, Anjali K Sajeev, Atul Shukla, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, K N Narayanan Unni","doi":"10.1007/s12200-023-00101-3","DOIUrl":"https://doi.org/10.1007/s12200-023-00101-3","url":null,"abstract":"White organic light-emitting diodes (WOLEDs) have several desirable features, but their commercialization is hindered by the poor stability of blue light emitters and high production costs due to complicated device structures. Herein, we investigate a standard blue emitting hole transporting material (HTM) N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) and its exciplex emission upon combining with a suitable electron transporting material (ETM), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ). Blue and yellow OLEDs with simple device structures are developed by using a blend layer, NPB:TAZ, as a blue emitter as well as a host for yellow phosphorescent dopant iridium (III) bis(4-phenylthieno[3,2-c]pyridinato-N,C2')acetylacetonate (PO-01). Strategic device design then exploits the ambipolar charge transport properties of tetracene as a spacer layer to connect these blue and yellow emitting units. The tetracene-linked device demonstrates more promising results compared to those using a conventional charge generation layer (CGL). Judicious choice of the spacer prevents exciton diffusion from the blue emitter unit, yet facilitates charge carrier transport to the yellow emitter unit to enable additional exciplex formation. This complementary behavior of the spacer improves the blue emission properties concomitantly yielding reasonable yellow emission. The overall white light emission properties are enhanced, achieving CIE coordinates (0.36, 0.39) and color temperature (4643 K) similar to daylight. Employing intermolecular exciplex emission in OLEDs simplifies the device architecture via its dual functionality as a host and as an emitter.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"46"},"PeriodicalIF":5.4,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10721783/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photostimulation of lymphatic clearance of β-amyloid from mouse brain: a new strategy for the therapy of Alzheimer's disease. 光刺激小鼠大脑中β-淀粉样蛋白的淋巴清除：治疗阿尔茨海默病的新策略。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-14 DOI: 10.1007/s12200-023-00099-8

Dongyu Li, Hao Lin, Silin Sun, Shaojun Liu, Zhang Liu, Yuening He, Jingtan Zhu, Jianyi Xu, Oxana Semyachkina-Glushkovskaya, Tingting Yu, Dan Zhu

{"title":"Photostimulation of lymphatic clearance of β-amyloid from mouse brain: a new strategy for the therapy of Alzheimer's disease.","authors":"Dongyu Li, Hao Lin, Silin Sun, Shaojun Liu, Zhang Liu, Yuening He, Jingtan Zhu, Jianyi Xu, Oxana Semyachkina-Glushkovskaya, Tingting Yu, Dan Zhu","doi":"10.1007/s12200-023-00099-8","DOIUrl":"https://doi.org/10.1007/s12200-023-00099-8","url":null,"abstract":"Alzheimer's disease (AD) is an age-related neurodegenerative disorder that poses a significant burden on socio-economic and healthcare systems worldwide. However, the currently available therapy of AD is limited, and new strategies are needed to enhance the clearance of β-amyloid (Aβ) protein and improve cognitive function. Photobiomodulation (PBM) is a non-invasive and effective therapeutic method that has shown promise in treating various brain diseases. Here, we demonstrate that 1267-nm PBM significantly alleviates cognitive decline in the 5xFAD mouse model of AD and is safe as it does not induce a significant increase in cortical temperature. Moreover, with the combination of 3D tissue optical clearing imaging and automatic brain region segmentation, we show that PBM-mediated reductions of Aβ plaques in different subregions of prefrontal cortex and the hippocampus are different. The PBM-induced lymphatic clearance of Aβ from the brain is associated with improvement of memory and cognitive functions in 5xFAD mice. Our results suggest that the modulation of meningeal lymphatic vessels (MLVs) should play an important role in promoting Aβ clearance. Collectively, this pilot study demonstrates that PBM can safely accelerate lymphatic clearance of Aβ from the brain of 5xFAD mice, promoting improvement of neurocognitive status of AD animals suggesting that PBM can be an effective and bedside therapy for AD.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"45"},"PeriodicalIF":5.4,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10721782/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Local measurement of terahertz field-induced second harmonic generation in plasma filaments. 等离子体丝中太赫兹场诱导二次谐波生成的局部测量。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-13 DOI: 10.1007/s12200-023-00095-y

Kareem J Garriga Francis, Xi-Cheng Zhang

{"title":"Local measurement of terahertz field-induced second harmonic generation in plasma filaments.","authors":"Kareem J Garriga Francis, Xi-Cheng Zhang","doi":"10.1007/s12200-023-00095-y","DOIUrl":"https://doi.org/10.1007/s12200-023-00095-y","url":null,"abstract":"The concept of Terahertz Field-Induced Second Harmonic (TFISH) Generation is revisited to introduce a single-shot detection scheme based on third order nonlinearities. Focused specifically on the further development of THz plasma-based sources, we begin our research by reimagining the TFISH system to serve as a direct plasma diagnostic. In this work, an optical probe beam is used to mix directly with the strong ponderomotive current associated with laser-induced ionization. A four-wave mixing (FWM) process then generates a strong second-harmonic optical wave because of the mixing of the probe beam with the nonlinear current components oscillating at THz frequencies. The observed conversion efficiency is high enough that for the first time, the TFISH signal appears visible to the human eye. We perform spectral, spatial, and temporal analysis on the detected second-harmonic frequency and show its direct relationship to the nonlinear current. Further, a method to detect incoherent and coherent THz inside plasma filaments is devised using spatio-temporal couplings. The single-shot detection configurations are theoretically described using a combination of expanded FWM models with Kostenbauder and Gaussian Q-matrices. We show that the retrieved temporal traces for THz radiation from single- and two-color laser-induced air-plasma sources match theoretical descriptions very well. High temporal resolution is shown with a detection bandwidth limited only by the spatial extent of the probe laser beam. Large detection bandwidth and temporal characterization is shown for THz radiation confined to under-dense plasma filaments induced by < 100 fs lasers below the relativistic intensity limit.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"44"},"PeriodicalIF":5.4,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10719236/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138800981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vapor growth of V-doped MoS₂ monolayers with enhanced B-exciton emission and broad spectral response. 具有增强b激子发射和广谱响应的v掺杂MoS2单层的气相生长。

IF 4.2 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-07 DOI: 10.1007/s12200-023-00097-w

Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li

{"title":"Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response.","authors":"Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li","doi":"10.1007/s12200-023-00097-w","DOIUrl":"10.1007/s12200-023-00097-w","url":null,"abstract":"Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"42"},"PeriodicalIF":4.2,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10703759/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138498212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An all-silicon design of a high-efficiency broadband transmissive terahertz polarization convertor. 全硅设计的高效宽带透射式太赫兹偏振转换器。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-06 DOI: 10.1007/s12200-023-00098-9

Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu

{"title":"An all-silicon design of a high-efficiency broadband transmissive terahertz polarization convertor.","authors":"Xiaohua Xing, Die Zou, Xin Ding, Jianquan Yao, Liang Wu","doi":"10.1007/s12200-023-00098-9","DOIUrl":"10.1007/s12200-023-00098-9","url":null,"abstract":"Polarization, a fundamental behavior of electromagnetic waves, holds immense potential across diverse domains such as environmental monitoring, biomedicine, and ocean exploration. However, achieving efficient modulation of terahertz waves with wide operational bandwidth poses significant challenges. Here, we introduce an all-silicon polarization converter designed specifically to operate in the terahertz range of the electromagnetic spectrum. Simulation results demonstrate that the average conversion efficiency of cross-linear waves exceeds 80% across a wide frequency range spanning from 1.00 to 2.32 THz, with the highest conversion efficiency peaking at an impressive 99.97%. Additionally, our proposed structure facilitates linear-to-circular polarization conversion with an ellipticity of 1 at 0.85 THz. Furthermore, by rotating the cross-shaped microstructure, active control over arbitrary polarization states can be achieved. To summarize, the proposed structure offers remarkable flexibility and ease of integration, providing a reliable and practical solution for achieving broadband and efficient polarization conversion of terahertz waves.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"40"},"PeriodicalIF":5.4,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10700243/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138487297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of silicon sub-bandgap photodetection by helium-ion implantation. 通过氦离子注入增强硅亚带隙光电探测。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-12-06 DOI: 10.1007/s12200-023-00096-x

Zhao Wang, Xiaolei Wen, Kai Zou, Yun Meng, Jinwei Zeng, Jian Wang, Huan Hu, Xiaolong Hu

引用次数: 0