Frontiers of Optoelectronics最新文献_第7页

Organic fluorescent probes for live-cell super-resolution imaging. 用于活细胞超分辨率成像的有机荧光探针。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-10 DOI: 10.1007/s12200-023-00090-3

Xinxin Duan, Meng Zhang, Yu-Hui Zhang

引用次数: 0

Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation. 3.5μm掺铒ZBLAN光纤激光器的泵浦量子效率优化。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-09 DOI: 10.1007/s12200-023-00089-w

Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao

{"title":"Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation.","authors":"Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao","doi":"10.1007/s12200-023-00089-w","DOIUrl":"10.1007/s12200-023-00089-w","url":null,"abstract":"976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (4F9/2 → 4F7/2) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"33"},"PeriodicalIF":5.4,"publicationDate":"2023-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10635972/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71521160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the performance of thin-film VCSELs on composite metal substrate. 薄膜VCSEL在复合金属衬底上的性能研究。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-11-08 DOI: 10.1007/s12200-023-00086-z

William Anderson Lee Sanchez, Shreekant Sinha, Po-Yu Wang, Ray-Hua Horng

{"title":"Study on the performance of thin-film VCSELs on composite metal substrate.","authors":"William Anderson Lee Sanchez, Shreekant Sinha, Po-Yu Wang, Ray-Hua Horng","doi":"10.1007/s12200-023-00086-z","DOIUrl":"10.1007/s12200-023-00086-z","url":null,"abstract":"Thin film p-side up vertical-cavity surface-emitting lasers (VCSELs) with 940 nm wavelength on a composite metal (Copper/Invar/Copper; CIC) substrate has been demonstrated by twice-bonding transfer and substrate removing techniques. The CIC substrate is a sandwich structure with a 10 µm thick Copper (Cu) layer/30 µm thick Invar layer/10 µm thick Cu layer. The Invar layer was composed of Iron (Fe) and Nickel (Ni) with a proportion of 70:30. The thermal expansion coefficient of the composite CIC metal can match that of the GaAs substrate. It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking. At 1 mA current, the top-emitting VCSEL/GaAs and thin-film VCSEL/CIC had a voltage of 1.39 and 1.37 V, respectively. The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW, respectively. The 50 µm thick CIC substrate can play a good heat dissipation function, which results in improving the electrical and optical characteristics of thin film VCSELs/CIC. The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs. The obtained data suggested that VCSELs on a composite metal substrate not only affected significantly the characteristics of thin film VCSEL, but also improved considerably the device thermal performance.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"32"},"PeriodicalIF":5.4,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10630174/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71480722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic tapered Yb-doped fiber chirped pulse amplifier delivering 126 μJ and 207 MW femtosecond laser with near diffraction-limited beam quality. 单片锥形掺镱光纤啁啾脉冲放大器，输出126μJ和207MW飞秒激光，光束质量接近衍射极限。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-31 DOI: 10.1007/s12200-023-00087-y

Tao Wang, Bo Ren, Can Li, Kun Guo, Jinyong Leng, Pu Zhou

{"title":"Monolithic tapered Yb-doped fiber chirped pulse amplifier delivering 126 μJ and 207 MW femtosecond laser with near diffraction-limited beam quality.","authors":"Tao Wang, Bo Ren, Can Li, Kun Guo, Jinyong Leng, Pu Zhou","doi":"10.1007/s12200-023-00087-y","DOIUrl":"https://doi.org/10.1007/s12200-023-00087-y","url":null,"abstract":"In this work, a high-energy and high peak power chirped pulse amplification system with near diffraction-limited beam quality based on tapered confined-doped fiber (TCF) is experimentally demonstrated. The TCF has a core numerical aperture of 0.07 with core/cladding diameter of 35/250 µm at the thin end and 56/400 μm at the thick end. With a backward-pumping configuration, a maximum single pulse energy of 177.9 μJ at a repetition rate of 504 kHz is realized, corresponding to an average power of 89.7 W. Through partially compensating for the accumulated nonlinear phase during the amplification process via adjusting the high order dispersion of the stretching chirped fiber Bragg grating, the duration of the amplified pulse is compressed to 401 fs with a pulse energy of 126.3 μJ and a peak power of 207 MW, which to the best of our knowledge represents the highest peak power ever reported from a monolithic ultrafast fiber laser. At the highest energy, the polarization extinction ratio and the M2 factor were respectively measured to be ~ 19 dB and 1.20. In addition, the corresponding intensity noise properties as well as the short- and long-term stability were also examined, verifying a stable operation of the system. It is believed that the demonstrated laser source could find important applications in, for example, advanced manufacturing and photomedicine.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"30"},"PeriodicalIF":5.4,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10618150/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71422954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Upconversion luminescence and optical thermometry behaviors of Yb³⁺ and Ho³⁺ co-doped GYTO crystal. Yb3+和Ho3+共掺杂GYTO晶体的上转换发光和光学测温行为。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-31 DOI: 10.1007/s12200-023-00083-2

Chuancheng Zhang, Shoujun Ding, Miaomiao Wang, Hao Ren, Xubing Tang, Yong Zou, Renqin Dou, Wenpeng Liu

{"title":"Upconversion luminescence and optical thermometry behaviors of Yb3+ and Ho3+ co-doped GYTO crystal.","authors":"Chuancheng Zhang, Shoujun Ding, Miaomiao Wang, Hao Ren, Xubing Tang, Yong Zou, Renqin Dou, Wenpeng Liu","doi":"10.1007/s12200-023-00083-2","DOIUrl":"https://doi.org/10.1007/s12200-023-00083-2","url":null,"abstract":"Optical thermometry based on the upconversion (UC) luminescence intensity ratio (LIR) has attracted considerable attention because of its feasibility for achievement of accurate non-contact temperature measurement. Compared with traditional UC phosphors, optical thermometry based on UC single crystals can achieve faster response and higher sensitivity due to the stability and high thermal conductivity of the single crystals. In this study, a high-quality 5 at% Yb3+ and 1 at% Ho3+ co-doped Gd0.74Y0.2TaO4 single crystal was grown by the Czochralski (Cz) method, and the structure of the as-grown crystal was characterized. Importantly, the UC luminescent properties and optical thermometry behaviors of this crystal were revealed. Under 980 nm wavelength excitation, green and red UC luminescence lines at 550 and 650 nm and corresponding to the 5F4/5S2 → 5I8 and 5F5 → 5I8 transitions of Ho3+, respectively, were observed. The green and red UC emissions involved a two-photon mechanism, as evidenced by the analysis of power-dependent UC emission spectra. The temperature-dependent UC emission spectra were measured in the temperature range of 330-660 K to assess the optical temperature sensing behavior. At 660 K, the maximum relative sensing sensitivity (Sr) was determined to be 0.0037 K-1. These results highlight the significant potential of Yb,Ho:GYTO single crystal for optical temperature sensors.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"31"},"PeriodicalIF":5.4,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10618148/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71422955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multimode sensing based on optical microcavities. 基于光学微腔的多模传感。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-27 DOI: 10.1007/s12200-023-00084-1

Yanran Wu, Bing Duan, Changhong Li, Daquan Yang

引用次数: 0

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics. 用于高效PbSe胶体量子点光伏的ZnO电子传输层的氟化物钝化。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-27 DOI: 10.1007/s12200-023-00082-3

Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang

{"title":"Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics.","authors":"Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang","doi":"10.1007/s12200-023-00082-3","DOIUrl":"10.1007/s12200-023-00082-3","url":null,"abstract":"Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"28"},"PeriodicalIF":5.4,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611680/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54228759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells. 稳定的PbS胶体量子点油墨能够实现红外太阳能电池的刀片涂层。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-10-26 DOI: 10.1007/s12200-023-00085-0

Xinzhao Zhao, Mingyu Li, Tianjun Ma, Jun Yan, Gomaa Mohamed Gomaa Khalaf, Chao Chen, Hsien-Yi Hsu, Haisheng Song, Jiang Tang

{"title":"Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells.","authors":"Xinzhao Zhao, Mingyu Li, Tianjun Ma, Jun Yan, Gomaa Mohamed Gomaa Khalaf, Chao Chen, Hsien-Yi Hsu, Haisheng Song, Jiang Tang","doi":"10.1007/s12200-023-00085-0","DOIUrl":"10.1007/s12200-023-00085-0","url":null,"abstract":"Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid-base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm2 of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"27"},"PeriodicalIF":5.4,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10602987/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50161455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Widely tunable and high resolution mid-infrared laser based on BaGa₄Se₇ optical parametric oscillator. 基于BaGa4Se7光学参量振荡器的宽调谐高分辨率中红外激光器。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-09-26 DOI: 10.1007/s12200-023-00077-0

Qing Ye, Hui Kong, Jintian Bian, Jiyong Yao, Enlong Wang, Yunlong Wu, Haiping Xu, Kaihua Wen, Yihua Hu

引用次数: 0

Inorganic A-site cations improve the performance of band-edge carriers in lead halide perovskites. 无机A位阳离子改善了卤化铅钙钛矿中带边载流子的性能。

IF 5.4 3区工程技术

Frontiers of Optoelectronics Pub Date : 2023-09-25 DOI: 10.1007/s12200-023-00078-z

Cheng Wang, Yaoguang Rong, Ti Wang

引用次数: 0