Yb3+和Ho3+共掺杂GYTO晶体的上转换发光和光学测温行为。

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chuancheng Zhang, Shoujun Ding, Miaomiao Wang, Hao Ren, Xubing Tang, Yong Zou, Renqin Dou, Wenpeng Liu
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引用次数: 0

摘要

基于上转换(UC)发光强度比(LIR)的光学测温由于其实现精确非接触式温度测量的可行性而引起了人们的广泛关注。与传统的UC磷光体相比,基于UC单晶的光学测温由于单晶的稳定性和高导热性,可以实现更快的响应和更高的灵敏度。本研究采用直拉法生长了高质量的5at%Yb3+和1at%Ho3+共掺杂Gd0.74Y0.2TaO4单晶,并对其结构进行了表征。重要的是,揭示了该晶体的UC发光特性和光学测温行为。在980nm波长激发下,绿色和红色UC在550和650nm处发光,对应于5F4/5S2 → 5I8和5F5 → 观察到Ho3+的5I8跃迁。绿色和红色UC发射涉及双光子机制,功率相关UC发射光谱的分析证明了这一点。在330-660K的温度范围内测量与温度相关的UC发射光谱,以评估光学温度传感行为。在660K下,最大相对感测灵敏度(Sr)被确定为0.0037K-1。这些结果突出了Yb,Ho:GYTO单晶在光学温度传感器中的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Upconversion luminescence and optical thermometry behaviors of Yb<sup>3+</sup> and Ho<sup>3+</sup> co-doped GYTO crystal.

Upconversion luminescence and optical thermometry behaviors of Yb<sup>3+</sup> and Ho<sup>3+</sup> co-doped GYTO crystal.

Upconversion luminescence and optical thermometry behaviors of Yb<sup>3+</sup> and Ho<sup>3+</sup> co-doped GYTO crystal.

Upconversion luminescence and optical thermometry behaviors of Yb3+ and Ho3+ co-doped GYTO crystal.

Optical thermometry based on the upconversion (UC) luminescence intensity ratio (LIR) has attracted considerable attention because of its feasibility for achievement of accurate non-contact temperature measurement. Compared with traditional UC phosphors, optical thermometry based on UC single crystals can achieve faster response and higher sensitivity due to the stability and high thermal conductivity of the single crystals. In this study, a high-quality 5 at% Yb3+ and 1 at% Ho3+ co-doped Gd0.74Y0.2TaO4 single crystal was grown by the Czochralski (Cz) method, and the structure of the as-grown crystal was characterized. Importantly, the UC luminescent properties and optical thermometry behaviors of this crystal were revealed. Under 980 nm wavelength excitation, green and red UC luminescence lines at 550 and 650 nm and corresponding to the 5F4/5S2 → 5I8 and 5F5 → 5I8 transitions of Ho3+, respectively, were observed. The green and red UC emissions involved a two-photon mechanism, as evidenced by the analysis of power-dependent UC emission spectra. The temperature-dependent UC emission spectra were measured in the temperature range of 330-660 K to assess the optical temperature sensing behavior. At 660 K, the maximum relative sensing sensitivity (Sr) was determined to be 0.0037 K-1. These results highlight the significant potential of Yb,Ho:GYTO single crystal for optical temperature sensors.

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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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