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Low-power and high-speed 13T SRAM cell using FinFETs 使用finfet的低功耗和高速13T SRAM单元
IET Circuits Devices Syst. Pub Date : 2017-06-08 DOI: 10.1049/iet-cds.2016.0287
S. Saxena, R. Mehra
{"title":"Low-power and high-speed 13T SRAM cell using FinFETs","authors":"S. Saxena, R. Mehra","doi":"10.1049/iet-cds.2016.0287","DOIUrl":"https://doi.org/10.1049/iet-cds.2016.0287","url":null,"abstract":"Fin field-effect transistors (FinFETs) are replacing the traditional planar metal-oxide-semiconductor FETs (MOSFETs) because of superior capability in controlling short channel effects, leakage current, propagation delay, and power dissipation. Planar MOSFETs face the problem of process variability but the FinFETs mitigate the device-performance variability due to number of dopant ions. This work includes the design of static-random access memory (SRAM) cell using FinFETs. The performance analysis of the ST11T, proposed ST13T SRAM cell, and with power gating sleep transistors is given in this study using the Cadence Virtuoso Tool (V.6.1). Owing to its improved gate controllability and scalability, the FinFET transistor structure is better than the conventional planar complementary MOS technology. The proposed design aims at the power reduction and speed improvement for the SRAM cell. From the result it is clear that optimised proposed FinFET-based ST13T SRAM cell is 92% more power efficient with the use of power gating technique, i.e. sleep transistors approach and having 12.84% less delay due to the use of transmission gates in the access path.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"118855093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Introducing industrial design flow of an RFIC chip to a graduate course: building the ecosystem and bridging the gap between industry and academia 将RFIC芯片的工业设计流程引入研究生课程:构建生态系统，弥合产学研的差距
IET Circuits Devices Syst. Pub Date : 2017-06-06 DOI: 10.1049/iet-cds.2016.0434
L. Albasha, O. Hammi
{"title":"Introducing industrial design flow of an RFIC chip to a graduate course: building the ecosystem and bridging the gap between industry and academia","authors":"L. Albasha, O. Hammi","doi":"10.1049/iet-cds.2016.0434","DOIUrl":"https://doi.org/10.1049/iet-cds.2016.0434","url":null,"abstract":"Radio-frequency integrated circuits (RFICs) design and fabrication require sets of skills that are professionally earned through years of hands-on experiences in a developed industrial environment such as fabless design houses. Difficult design specifications, dynamic working environment, and tight deadlines in ruthless time cycles of design to mass production are all, but few examples that academia often fails to train young engineers to face. In general, no skill-based education can be easily found for fresh graduates interested in a career in IC design. As part of an industry-oriented graduate course in RFIC, students were introduced into industry design flow through lectures and major project assignments. The latter were selected to form an integrated design flow that ultimately leads to the design of a full RFIC. Students were offered to select design blocks as projects and were given specifications to meet, extracted from a transceiver architecture study. The outcome of the work showed an interesting trend of students starting their design in individual efforts, but later clustering together in team effort to match their designs together and to finish their tasks at the fictitious tape-out deadline.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120769915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and performance evaluation of two novel linearisation circuits for giant magneto-resistance based sensors 两种新型巨磁阻传感器线性化电路的设计与性能评价
IET Circuits Devices Syst. Pub Date : 2017-04-07 DOI: 10.1049/iet-cds.2017.0047
Tapabrata Sen, Anoop Chandrika Sreekantan, S. Sen
{"title":"Design and performance evaluation of two novel linearisation circuits for giant magneto-resistance based sensors","authors":"Tapabrata Sen, Anoop Chandrika Sreekantan, S. Sen","doi":"10.1049/iet-cds.2017.0047","DOIUrl":"https://doi.org/10.1049/iet-cds.2017.0047","url":null,"abstract":"This study presents two simple and efficient linearisation circuits for giant magneto-resistance (GMR)-based magnetic field sensors. GMR sensors are commonly available in wheatstone-bridge form, comprising two active GMR and two passive GMR elements. The output of such a sensor possesses a non-linear dependence on the input magnetic field. The proposed linearisation circuits operate on the output of a GMR sensor and provide a linear output with respect to the magnetic field. The first GMR linearisation circuit (GLC1) is based on an enhanced feedback compensation approach, while the second (GLC2) scheme uses a constant current technique. The methodologies of the schemes are described using mathematical derivations. Detailed analyses of the schemes are carried out to bring out the effects of circuit and sensor non-idealities on circuit performance. Further, the circuits were implemented on printed circuit boards and tested. Test results showed the capability of GLC1 and GLC2 to produce linear transfer characteristics. A prototype GMR sensor unit was then fabricated and tested with the developed circuits. Output non-linearity obtained during the experimentation was around 0.7%. Analyses of the results proved the superior performance of GLC1 and GLC2 over the existing schemes.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"119893761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Sub-threshold level converter with internal supply feedback for multi-voltage applications 具有内部电源反馈的亚阈值电平转换器，用于多电压应用
IET Circuits Devices Syst. Pub Date : 2017-03-01 DOI: 10.1049/iet-cds.2015.0359
L. Wen, Haibo Wen, Xiaoyang Zeng
{"title":"Sub-threshold level converter with internal supply feedback for multi-voltage applications","authors":"L. Wen, Haibo Wen, Xiaoyang Zeng","doi":"10.1049/iet-cds.2015.0359","DOIUrl":"https://doi.org/10.1049/iet-cds.2015.0359","url":null,"abstract":"A new sub-threshold level shifter for ultra-low voltage digital systems is presented in this study. The self-controlled supply feedback loop is quintessential for this circuit. Measured results from a test chip show that it is capable of realising a voltage conversion from a voltage as low as 0.1-1.2 V reliably, while maintaining an operational frequency of 25.2 kHz, when implemented in a 65-nm process technology. In addition, it also has ample process variation tolerance and low static power consumption. To support multi-voltage digital systems, the proposed level converter can up-convert an input at any voltage with this range to normal voltage domains.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120639598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low-power CMOS variable gain amplifier based on a novel tunable transconductor 基于新型可调谐晶体管的低功耗CMOS可变增益放大器
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/iet-cds.2014.0130
T. Sánchez-Rodríguez, J. Galán, M. Pedro, A. López-Martín, R. Carvajal, J. Ramírez-Angulo
{"title":"Low-power CMOS variable gain amplifier based on a novel tunable transconductor","authors":"T. Sánchez-Rodríguez, J. Galán, M. Pedro, A. López-Martín, R. Carvajal, J. Ramírez-Angulo","doi":"10.1049/iet-cds.2014.0130","DOIUrl":"https://doi.org/10.1049/iet-cds.2014.0130","url":null,"abstract":"A CMOS variable gain amplifier (VGA) based on a novel linear and tunable triode transconductor is presented. The proposed transconductor employs local negative feedback for linearisation controlling the drain voltage of the input transistors biased in the triode region. The new design is able to operate at low supply voltage and the stability is guaranteed. The transconductor features a 47.75 dB dc gain and a 4.23 MHz unity gain frequency with a power consumption of only 91 µA. To show the feasibility of the proposed transconductor, a VGA has been fabricated. Measurement results for a 0.13 µm CMOS design show a −3 dB bandwidth above 2.8 MHz and a third-order harmonic distortion at 500 kHz below −46 dB over the whole gain range. The VGA exhibits a maximum power consumption of only 395 µW from a single 1.2 V supply.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134241541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Three-state quantum dot gate field-effect transistor in silicon-on-insulator 绝缘体上硅的三态量子点门场效应晶体管
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/iet-cds.2014.0202
S. Karmakar, M. Gogna, E. Suarez, F. Jain
{"title":"Three-state quantum dot gate field-effect transistor in silicon-on-insulator","authors":"S. Karmakar, M. Gogna, E. Suarez, F. Jain","doi":"10.1049/iet-cds.2014.0202","DOIUrl":"https://doi.org/10.1049/iet-cds.2014.0202","url":null,"abstract":"This paper presents the observation of intermediate state in the quantum dot gate field-effect transistors (QDGFETs) in silicon-on-insulator (SOI) substrate. Silicon dioxide (SiO2)-cladded silicon (Si) quantum dots (QDs) are site-specifically self-assembled on the top of SiO2 tunnel gate insulator on SOI substrates. Charge carrier tunnelling from the inversion channel to the QD layers on top of the gate insulator is responsible for the generation of intermediate state. Charge tunnelling is also verified by the C–V characteristics of the MOS device having same insulator structure as the gate region of the QDGFET. Considering the transfer of charge carriers from the inversion channel to two layers of SiO2-cladded Si QDs, a model based on self-consistent solution of Schrodinger and Poisson equations, is also presented, to explain the generation of intermediate state.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131237725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Enhanced challenge-response set and secure usage scenarios for ordering-based ring oscillator-physical unclonable functions 增强的挑战-响应集和安全的基于顺序的环形振荡器-物理不可克隆功能的使用场景
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/iet-cds.2014.0089
Giray Kömürcü, A. E. Pusane, Günhan Dündar
{"title":"Enhanced challenge-response set and secure usage scenarios for ordering-based ring oscillator-physical unclonable functions","authors":"Giray Kömürcü, A. E. Pusane, Günhan Dündar","doi":"10.1049/iet-cds.2014.0089","DOIUrl":"https://doi.org/10.1049/iet-cds.2014.0089","url":null,"abstract":"The number of applicable challenge–response pairs (CRPs) in physical unclonable functions (PUFs) is critical especially for authentication protocols in security systems. Ideally, full read-out of all CRPs should be infeasible and CRPs should be independent from each other for a highly secure system. CRP concept is not defined in ordering-based ring oscillator (RO) PUFs presented in the literature. In this paper, the authors propose two methods for enhanced CRP set in ordering-based RO-PUFs and analyse their performance in terms of uniqueness and area efficiency. Next, they propose three secure usage scenarios based on enhanced CRP set methods, preventing the CRPs from leaking information about each other. With the proposed systems, 100% robust, area and power efficient and secure PUF structures with exponential number of CRPs become possible that are very convenient especially for authentication protocols.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125356509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Efficient transient noise analysis of non-periodic mixed analogue/digital circuits 非周期混合模拟/数字电路的高效瞬态噪声分析
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/IET-CDS.2013.0438
Matteo Biggio, F. Bizzarri, A. Brambilla, M. Storace
{"title":"Efficient transient noise analysis of non-periodic mixed analogue/digital circuits","authors":"Matteo Biggio, F. Bizzarri, A. Brambilla, M. Storace","doi":"10.1049/IET-CDS.2013.0438","DOIUrl":"https://doi.org/10.1049/IET-CDS.2013.0438","url":null,"abstract":"This paper proposes a numerical method for accurate time-domain noise simulation of mixed analogue/digital electrical circuits that in principle do not admit a periodic steady-state working condition, such as fractional ΔΣ phase-locked loops (PLLs). By means of a tool known as saltation matrix, which allows dealing with non-smooth vector fields, a variational approach is adopted. The power spectral density of a noisy electrical variable is computed by applying the Thomson's multitaper method (MTM) to the numerical solution of the stochastic variational model of the circuit. This allows to resort to a single transient simulation run, thus avoiding cpu time consuming Monte-Carlo-like approaches. The effectiveness of the proposed method is shown by comparing simulation results related to a commercial fractional ΔΣ PLL with experimental data.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125681840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Prediction of reference spur in frequency synthesisers 频率合成器中参考杂散的预测
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/iet-cds.2014.0019
Debashis Mandal, P. Mandal, T. K. Bhattacharyya
{"title":"Prediction of reference spur in frequency synthesisers","authors":"Debashis Mandal, P. Mandal, T. K. Bhattacharyya","doi":"10.1049/iet-cds.2014.0019","DOIUrl":"https://doi.org/10.1049/iet-cds.2014.0019","url":null,"abstract":"This paper reports an analytical approach to predict the reference spur of a conventional frequency synthesiser more accurately in comparison with the existing technique where the ripple voltage waveform at voltage controlled oscillator input is approximated by narrow rectangular pulse. In this work, the ripple voltage waveform is represented by a combination of triangular and rectangular pulses. Transistor level SPICE simulations show that using the proposed approach, the error in the predicted spur has been reduced from about 29.84 to 0.64 dB. Measured result shows 4.39 dB error in the predicted spur. The derived expression has been extended further to predict the spur in frequency synthesisers having pulse repetition-based spur reducing technique including the repetition mismatch.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133831438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Study of injection-locked non-harmonic oscillators using Volterra series 用Volterra系列研究注入锁定非谐波振荡器
IET Circuits Devices Syst. Pub Date : 2015-04-09 DOI: 10.1049/iet-cds.2013.0424
Yushi Zhou, F. Yuan
{"title":"Study of injection-locked non-harmonic oscillators using Volterra series","authors":"Yushi Zhou, F. Yuan","doi":"10.1049/iet-cds.2013.0424","DOIUrl":"https://doi.org/10.1049/iet-cds.2013.0424","url":null,"abstract":"This study presents a Volterra series approach to analyse injection-locked non-harmonic oscillators. We show that by depicting the voltage transfer characteristics of comparators using hyperbolic tangent functions, non-harmonic oscillators can be analysed analytically using a set of Volterra circuits that are linear, have the same topology and element values but different inputs. We further show that the larger lock range of non-harmonic oscillators as compared with that of their harmonic counterparts is because of the harsher non-linear characteristics of these oscillators and the lower-order attenuation of the high-order frequency components of the oscillators. The reduced non-linear characteristics of ring oscillators because of the absence of positive feedback also gives rise to a smaller lock range as compared with relaxation oscillators. These theoretical findings are validated using both the simulation results of relaxation oscillators and ring oscillators designed in IBM 130 nm complementary metal oxide semiconductor technology and the measurement results of ring oscillators implemented using commercial ICs.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126484522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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