Advanced Optical Materials最新文献

{"title":"Harnessing Ultralong-Lived Triplet Excitons in Color-Tunable Carbon Dots for Multilayer Security Platform","authors":"Satendra Kumar,&nbsp;Pradip Pattanayak,&nbsp;Pradipta Purkayastha","doi":"10.1002/adom.71783","DOIUrl":"https://doi.org/10.1002/adom.71783","url":null,"abstract":"<div>\u0000 \u0000 <p>Achieving multicolor ultralong room-temperature phosphorescence (URTP) from a metal-free single benzenic framework represents a fundamental challenge owing to inefficient intersystem crossing. Herein, we demonstrate a precursor engineering strategy that enables excited-state modulation in carbon dots (CDs) derived from a single benzenic core. Controlled co-pyrolysis of urea with benzoic acid and methoxy-substituted derivatives systematically tunes the electron-donating character of the carbonizing precursor, thereby regulating electronic structure and triplet energy levels. During thermal condensation, the CDs are generated within a urea matrix and subsequently got confined in a cyanuric acid-rich, hydrogen-bonded rigid framework, which suppresses nonradiative pathways and stabilizes triplet excitons. This synergistic electronic modulation and structural rigidification afford color-tunable URTPs spanning from blue to yellow with a maximum lifetime of 1.3 s and a photoluminescence quantum yield of 18.1%. These findings establish a general design principle for single-core multicolor URTP systems and open avenues for advanced anti-counterfeiting and optical information encryption technologies.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal Ions Selectively Activate Emissive Centers in Carbon Dots, Triggering Color-Tunable Phosphorescence for Visual Detection","authors":"Jing Tan,&nbsp;Longtao Liu,&nbsp;Dian Wu,&nbsp;Yi Li,&nbsp;Peng Sha,&nbsp;Xingyu Gu,&nbsp;Songnan Qu,&nbsp;Zhiwen Jin,&nbsp;Haibo Zeng,&nbsp;Qijun Li,&nbsp;Jianning Ding","doi":"10.1002/adom.71734","DOIUrl":"https://doi.org/10.1002/adom.71734","url":null,"abstract":"<div>\u0000 \u0000 <p>Achieving real-time visual monitoring of heavy metal ions with high sensitivity remains a fundamental challenge due to the inherent limitations of fluorescence quenching-based sensors, including poor signal-to-noise ratios and insufficient color variation. Here, we report a paradigm-shifting strategy that unlocks color-tunable “off-on” phosphorescence in carbon dots (CDs) through selective metal ion activation of dual-emissive centers. The CDs feature unique dual-emissive phosphorescent centers: a green-emitting core state and a red-emitting surface state. Upon selective coordination with Pb²⁺, a dual regulatory mechanism is activated: the heavy-atom effect from Pb²⁺ enhances phosphorescence from both centers via spin–orbit coupling enhancement, while Pb²⁺-induced partial aggregation preferentially suppresses the red surface-state emission. This competitive enhancement-suppression dynamics produces a vivid phosphorescence color shift from red to green with increasing Pb2+ concentration, achieving an ultralow detection limit of 58.9 n<span>m</span>. We further integrated the test paper with a smartphone-based digital readout system, enabling objective, quantitative on-site analysis.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intrinsic Electric Field Driven High Sensitive Photodetection in Alloy TMDC MoSSe","authors":"Chumki Nayak,&nbsp;Suvadip Masanta,&nbsp;Shubhadip Moulick,&nbsp;Manotosh Pramanik,&nbsp;Atanu Kabiraj,&nbsp;Subhajit Mahapatra,&nbsp;Satchidananda Rath,&nbsp;Sukanya Ghosh,&nbsp;Atindra Nath Pal,&nbsp;Bipul Pal,&nbsp;Achintya Singha","doi":"10.1002/adom.71740","DOIUrl":"https://doi.org/10.1002/adom.71740","url":null,"abstract":"<div>\u0000 \u0000 <p>Alloying offers an effective way to improve the functionality of transition metal dichalcogenides (TMDCs) in both fundamental research and optoelectronic applications, as it allows for engineering their electronic and optical properties. This study investigates the optoelectronic properties of CVD-synthesized alloy MoSSe, which exhibits an inherent out-of-plane dipole moment, arising from asymmetry in S and Se atoms on either side of the Mo layer, as confirmed by piezoelectric force microscopy, polarization-resolved second harmonic generation studies and theoretical first-principles calculations. Time-resolved photoluminescence measurements reveal an extended exciton radiative recombination lifetime in MoSSe, attributed to electron-hole wavefunction separation by the dipole moment, which improves photodetection by facilitating enhanced electron-hole separation before recombination. The device demonstrates significant responsivity over broad spectral range. By employing the photogating effect, the device response can be switched from slow to fast modes. These findings are further supported by illumination intensity-dependent photoluminescence and Raman measurements, underscoring the potential of polar TMDCs in future optoelectronic devices.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ortho-Diboron Blue Multiple Resonance Thermally Activated Delayed Fluorescence Material","authors":"Yu Wang,&nbsp;Jia-Qi Xi,&nbsp;Si-Wei Wei,&nbsp;Yi Wei,&nbsp;Jia-Zhen Zhu,&nbsp;Shuai Xing,&nbsp;Li Yuan,&nbsp;You-Xuan Zheng","doi":"10.1002/adom.71789","DOIUrl":"https://doi.org/10.1002/adom.71789","url":null,"abstract":"<div>\u0000 \u0000 <p>Diboron-based multi-resonance thermally activated delayed fluorescence materials (MR-TADF) are pivotal for advanced display applications, whereas <i>ortho</i>-diboronated derivatives remain scarce. Furthermore, the reported <i>ortho</i>-diboronated compounds demonstrate a significant bathochromic shift to enable long-wavelength emission. Herein, we propose a strategy of fusing an isolated <i>ortho</i>-diboron moiety into the nitrogen/ boron/ oxygen skeleton to partially offset frontier molecular orbitals, which reduces the electronic coupling effect, and the intramolecular charge transfer state is modulated to achieve pure blue emission peaking at 461 nm in toluene with narrow emission. Notably, the TADF material-sensitized organic light-emitting diode achieves a maximum external quantum efficiency of 34.9% with a low efficiency roll-off at a luminance of 1000 cd·m⁻². This study provides instructive insights for the realization of blue emission and full-spectrum materials in <i>ortho</i>-diboronated architectures.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminance Saturation in Luminescent Material: From Fundamental Mechanisms to Anti-Saturation Material Design","authors":"Yuhua Wang,&nbsp;Wenlei Cao,&nbsp;Yuhan Zhou,&nbsp;Runtian Kang","doi":"10.1002/adom.71805","DOIUrl":"https://doi.org/10.1002/adom.71805","url":null,"abstract":"<div>\u0000 \u0000 <p>With the development of laser display technology toward higher brightness and wider color gamut, phosphor conversion materials are prone to luminance saturation under high-power-density laser excitation, which severely restricts further improvements in display brightness and device stability. This review summarizes recent progress in understanding the luminance saturation mechanisms of phosphor materials for laser display applications, focusing on the two major aspects of thermal quenching and optical quenching. Thermal quenching mainly involves cross-relaxation and thermal ionization processes, whereas optical quenching is associated with mechanisms such as excited-state absorption (ESA), ground-state depletion (GSD), and energy-transfer upconversion (ETU). Furthermore, various approaches for enhancing resistance to thermal quenching are systematically discussed, including increasing lattice rigidity, defect levels compensates for the emission loss, cation disordering, and thermal management through inorganic encapsulation strategies. Meanwhile, effective methods for suppressing optical quenching are summarized, such as selecting luminescent centers with short lifetimes, reducing doping concentration, and promoting material single crystallization. Finally, future research directions toward high-power, highly stable laser-driven phosphor materials are proposed. This review is expected to facilitate the further application of phosphor materials in the field of laser display technology.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Turning Light Into Matter: Programmable Microstructures Via Dose Control in Two-Photon Polymerization","authors":"Michał Ziemczonok,&nbsp;Koen Vanmol","doi":"10.1002/adom.71770","DOIUrl":"https://doi.org/10.1002/adom.71770","url":null,"abstract":"<p>In two-photon polymerization (TPP), the degree of conversion (DC) of the resin affects a broad range of material properties including refractive index (RI), stiffness or shrinkage. Heterogeneous DC can substitute multimaterial or doped structures, and outright enable a new paradigm of bio-mimicking or numerically optimized structure designs. This work presents a new approach to variable-DC fabrication: structures are described as voxelized distributions of the desired material property, such as the RI, which the slicer converts into a dose distribution map addressed via printing laser power modulation. The versatility of this method is demonstrated by the fabrication of the <i>C. elegans</i> worm phantom with the most complex 3D RI distribution programmed to date, as the design was derived directly from the RI tomography imaging data. Optimized calibration methodology for the RI reveals excellent repeatability, accuracy (<span></span><math>\u0000 <semantics>\u0000 <mo>∼</mo>\u0000 <annotation>$sim$</annotation>\u0000 </semantics></math> 0.1%), uncertainty (<span></span><math>\u0000 <semantics>\u0000 <mo>∼</mo>\u0000 <annotation>$sim$</annotation>\u0000 </semantics></math> 0.001), and stability (1 year) of the RI across achievable DC. The presented workflow also enables grayscale lithography for reduced surface roughness and efficient precompensation strategies. In summary, this work provides an open source toolbox for augmenting TPP systems with a new degree of freedom and facilitates the widespread adoption of TPP fabrication with point-wise dose control.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.71770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Large-Format AlN-Based Vacuum Ultraviolet Imaging Detector","authors":"Zhengyi Yue,&nbsp;Lixin Zhang,&nbsp;Zhuogeng Lin,&nbsp;Kaikai Duan,&nbsp;Xin Zhang,&nbsp;Jun Wang,&nbsp;Wei Zheng,&nbsp;Chaofan Zhang","doi":"10.1002/adom.71657","DOIUrl":"https://doi.org/10.1002/adom.71657","url":null,"abstract":"<div>\u0000 \u0000 <p>Vacuum ultraviolet (VUV, 10–200 nm) imaging offers unique advantages, including direct observation of insulating samples with nanoscale high resolution, and no need to overcome the diffraction limit. Aluminum nitride (AlN) has been proven to be an efficient material for fabricating high-performance VUV array detectors. However, the pixel format remains limited, hindering their application in high-resolution imaging. Scaling up the pixel array still presents critical challenges in sustaining superior device performance and achieving data readout from each pixel. In this work, we demonstrate a 16 <span></span><math>\u0000 <semantics>\u0000 <mo>×</mo>\u0000 <annotation>$times$</annotation>\u0000 </semantics></math> 16 pixel array detector with a Pt/AlN/n-SiC heterostructure, which exhibits a responsivity of 52.27 <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>mA</mi>\u0000 <mo>·</mo>\u0000 <msup>\u0000 <mi>W</mi>\u0000 <mrow>\u0000 <mo>−</mo>\u0000 <mn>1</mn>\u0000 </mrow>\u0000 </msup>\u0000 </mrow>\u0000 <annotation>${rm mA}cdot{rm W}^{-1}$</annotation>\u0000 </semantics></math>, a photo-to-dark current ratio of approximately 10<span></span><math>\u0000 <semantics>\u0000 <msup>\u0000 <mrow></mrow>\u0000 <mn>5</mn>\u0000 </msup>\u0000 <annotation>$^5$</annotation>\u0000 </semantics></math>, and temporal responses of 15.4 ns (rise time) and 30.9 ns (decay time). Automatic data acquisition from each pixel is realized through a custom-designed readout circuit. The device shows no obvious crosstalk between adjacent pixels and achieves a pixel yield of 98.4%. Bilinear interpolation is employed to compensate for defective pixels and to generate an interpolated rendering of the image for improved display quality. This work offers a promising route toward AlN-based array detectors with larger pixel formats for high-resolution VUV imaging.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wavelength-Multiplexed 2D Beam Steering via a Passive Diffractive Network","authors":"Che-Yung Shen,&nbsp;Yuhang Li,&nbsp;Çağatay Işıl,&nbsp;Tianyi Gan,&nbsp;Mona Jarrahi,&nbsp;Aydogan Ozcan","doi":"10.1002/adom.71782","DOIUrl":"https://doi.org/10.1002/adom.71782","url":null,"abstract":"<p>We introduce a wavelength-addressable diffractive optical network that transforms illumination wavelength into a high-dimensional control parameter for arbitrarily programmable 2D beam steering. This passive architecture comprises cascaded spatially optimized diffractive layers, jointly designed using deep learning, to rapidly map distinct wavelengths to predefined/desired output angles. Unlike conventional single-layer dispersive optical elements, which are physically restricted to 1D linear mapping, this framework harnesses complex wavefront transformations to utilize the illumination wavelength as an intrinsic addressing key for arbitrary 2D beam steering, eliminating the need for mechanical scanning or electronic phase control. We numerically demonstrate wavelength-controlled beam steering across 625 wavelength channels spanning 400–750 nm, realizing a 25 × 25 array of independently addressable beam positions with subwavelength positioning accuracy and high channel fidelity. We further validate the proposed framework experimentally in both the terahertz and visible spectral regimes, demonstrating wavelength-multiplexed beam steering using 3D fabricated passive diffractive layers at terahertz frequencies and phase-only spatial light modulators in the visible spectrum. This wavelength-addressable diffractive architecture establishes a compact and scalable paradigm for high-speed programmable beam steering, with potential applications in optical communications, routing, imaging, sensing, and emerging photonic information-processing systems.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.71782","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multimodal Synergistic Optical Encryption Using Holographic Cholesteric Liquid Crystal Polymer Composite Films","authors":"Songlan Zhao,&nbsp;Shuqi Ren,&nbsp;Aotian Li,&nbsp;Xuan Zhou,&nbsp;Ji-Liang Zhu","doi":"10.1002/adom.71748","DOIUrl":"https://doi.org/10.1002/adom.71748","url":null,"abstract":"<div>\u0000 \u0000 <p>Integrating multiple optical encryption channels within a single thin-film platform is essential for increasing information capacity while avoiding the complexity associated with multilayer architectures. Herein, we report a holographic cholesteric liquid crystal composite films (HCLC-CFs) that integrates thermally programmable structural color, holographic phase modulation, and UV/thermal dual-responsive fluorescence within a single-layer optical encryption platform. Upon thermal stimulation, thermomechanical deformation of the polymer network simultaneously governs the evolution of the cholesteric pitch and the anisotropic deformation of the holographic grating, enabling coordinated wavelength tuning and dynamic phase modulation. Meanwhile, the incorporated fluorescent system exhibits dual thermo- and photo-responsive emission, with reversible thermal fluorescence evolution providing an additional one-time authentication capability. Consequently, wavelength, phase, and fluorescence evolve cooperatively under a common external stimulus, enabling hierarchical multimodal information encryption through coordinated optical decoding. This work demonstrates an effective strategy for developing integrated responsive photonic materials for advanced anti-counterfeiting and high-security optical information storage.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mixed-Dimensional GaN/AlN Microwires/Graphene/u-GaN Van der Waals Heterojunctions for High-Performance Hot-Electron Transistors and Ultraviolet Photodetectors","authors":"Guoxin Li,&nbsp;Zihan Deng,&nbsp;Shuaiqi Ding,&nbsp;Zhengdong Wu,&nbsp;Huan Wu,&nbsp;Wenrui Wu,&nbsp;Chao Liu,&nbsp;Fangliang Gao,&nbsp;Shuti Li","doi":"10.1002/adom.71785","DOIUrl":"https://doi.org/10.1002/adom.71785","url":null,"abstract":"<div>\u0000 \u0000 <p>To address short-channel effects and high-power consumption arising from the miniaturization of conventional silicon-based devices, hot-electron transistors (HETs) have emerged as promising candidates owing to their exceptional ultrafast carrier transport capabilities. Herein, we fabricate mixed-dimensional vertical van der Waals heterojunction HETs by integrating one-dimensional (1D) GaN/AlN microwires, two-dimensional (2D) monolayer graphene, and three-dimensional (3D) undoped bulk GaN, which combines the wide-bandgap characteristics of GaN and the superior properties of low-dimensional materials. Via rational band engineering, the device achieves a common-base current collection efficiency of 99.9% and a common-emitter current gain of 11.9. Driven by the intrinsic built-in electric field of the heterojunction, the device supports three operational modes for ultraviolet (UV) photodetection, featuring an ultralow dark current, self-powered photoresponse, and high sensitivity. This work verifies the great potential of GaN-based mixed-dimensional van der Waals heterostructures for electronic amplification and UV photodetection. It also provides a viable device platform and innovative strategies for developing monolithic multifunctional optoelectronic chips toward next-generation intelligent optoelectronic systems, including UV communication and high-sensitivity environmental monitoring.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 37","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149125911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}