Ultra-High-Speed Dilute Nitride Photodetectors on GaAs Substrate for 1310 nm Operation (Advanced Optical Materials 25/2025)

Abstract

Dilute Nitride Photodetectors

Dilute nitride photodetectors at 1310 nm wavelength fabricated using standard GaAs technology are reported that operate with low dark current and ultra-high speed, despite their very low carrier mobility compared to those on InP; achieved by embedding confined cloud of electrons, kept in quasi-equilibrium, that landscape the electric field, and respond collectively to the photoelectrons, circumventing transit time limitations. More details can be found in article 10.1002/adom.202500115 by Bahram Nabet and co-workers.