Advanced Optical Materials最新文献_第10页

Optical Poling of Ferroelectric Liquids 铁电液体的光学极化

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501378

Stefano Marni, Raouf Barboza, Noel Clark, Tommaso Bellini, Liana Lucchetti

{"title":"Optical Poling of Ferroelectric Liquids","authors":"Stefano Marni, Raouf Barboza, Noel Clark, Tommaso Bellini, Liana Lucchetti","doi":"10.1002/adom.202501378","DOIUrl":"https://doi.org/10.1002/adom.202501378","url":null,"abstract":"Ferroelectric nematic liquid crystals combine fluidity, spontaneous polarity, optical birefringence, and strong nonlinear response, unlocking a rich landscape of phenomena and control strategies yet to be fully explored. Here, all-optical manipulation of polar domains and topological textures in ferroelectric nematic cells assembled from lithium niobate plates is demonstrated. In these devices, the photovoltaic response of the solid substrate couples to the fluid's polar director, enabling light-driven reorganization of the ferroelectric alignment. Under focused illumination in parallel-rubbed cells, the emergence of submillimeter-scale spiral-shaped radial domains is observed, in excellent agreement with the underlying material properties. Furthermore, it is shown that both domain structures and wall configurations can be reversibly reconfigured by varying light exposure, thereby tuning the degree of domain fragmentation and wall unpinning. These results establish light-induced polarization patterning as a versatile tool for dynamic control of nematic ferroelectric order, with promising applications in the design of reconfigurable linear and nonlinear photonic devices.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 29","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202501378","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatially Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing 利用飞秒激光处理技术在SiN波导上实现hBN单光子发射器的空间确定性集成

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501231

Daiki Yamashita, Masaki Yumoto, Aiko Narazaki, Makoto Okano

{"title":"Spatially Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing","authors":"Daiki Yamashita, Masaki Yumoto, Aiko Narazaki, Makoto Okano","doi":"10.1002/adom.202501231","DOIUrl":"10.1002/adom.202501231","url":null,"abstract":"A post-fabrication method is demonstrated that enables spatially deterministic integration of hexagonal boron nitride (hBN) single-photon emitters onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto pre-fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub-microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser-written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second-order photon correlation measurements confirm its single-photon nature. Furthermore, on-chip excitation via the SiN waveguide is successfully achieved, demonstrating the compatibility of the approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with 2D material hybrid photonic devices.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202501231","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145110670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Micro-/Nanomaterials for Surface-Enhanced Optical Biosensing 用于表面增强光学生物传感的微/纳米材料

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501098

Jie Zhao, Xinyi Liu, Xujiang Yu, Wanwan Li

{"title":"Micro-/Nanomaterials for Surface-Enhanced Optical Biosensing","authors":"Jie Zhao, Xinyi Liu, Xujiang Yu, Wanwan Li","doi":"10.1002/adom.202501098","DOIUrl":"https://doi.org/10.1002/adom.202501098","url":null,"abstract":"Optical biosensors are pivotal for their stability and high throughput, but their sensitivity often hinges on optical signal strength. Thanks to the combination of plasmonic nanostructures and spectroscopy, surface-enhanced spectroscopy (SES) has emerged as a powerful tool for identifying and characterizing trace molecular species with ultrahigh sensitivity. This technique holds broad application prospects in the field of optical biosensors, including surface-enhanced fluorescence (SEF), surface-enhanced Raman scattering (SERS), and surface-enhanced infrared absorption (SEIRA), which significantly improve the interaction intensity between photons and materials. This review elaborates on SES from the perspective of the combined system of SEF, SERS, and SEIRA, and summarizes the mechanism, micro-/nanomaterials structural design principles, and applications. A comprehensive review of the mechanisms from electromagnetic and chemical perspectives is provided. Reasonable micro/nanomaterial design strategies are then discussed to customize hot spots for different platforms with optimal enhancement. The review aims to emphasize the significant impact of micro-/nanomaterials in surface-enhanced optical biosensing. Besides, the progress of surface-enhanced biosensors around immunoassays, DNA/RNA, and other biomolecules is summarized. Finally, the challenges and future directions of the field are outlined.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boron- and Oxygen-Doped π-Extended Nanographene: An Emitting Material for Organic Light-Emitting Diodes 硼氧掺杂π扩展纳米石墨烯：有机发光二极管的发光材料

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202500848

Mohan Gandhi Devulapally, Kiun Cheong, Jangho Moon, Rajkumar Nagavath, Jae Hee Lee, Jun Yeob Lee, Wan Pyo Hong

{"title":"Boron- and Oxygen-Doped π-Extended Nanographene: An Emitting Material for Organic Light-Emitting Diodes","authors":"Mohan Gandhi Devulapally, Kiun Cheong, Jangho Moon, Rajkumar Nagavath, Jae Hee Lee, Jun Yeob Lee, Wan Pyo Hong","doi":"10.1002/adom.202500848","DOIUrl":"https://doi.org/10.1002/adom.202500848","url":null,"abstract":"Expanding the molecular framework of hexabenzo[a,c,fg,j,l,op]tetracene (HBT) via heteroatom incorporation and topological edge control is crucial for achieving desired photophysical properties. However, synthesizing heteroatom-doped HBT derivatives remains highly challenging, and effective molecular design strategies have not yet been established. Herein, the synthesis of boron (B)- and oxygen (O)-doped expanded HBT (BO-HBT) is carried using a sequential Scholl cyclization strategy. This work is the first example of a B/O-expanded HBT molecule, demonstrating that heteroatom incorporation and peripheral alkyl group modifications enable accurate tuning of its electronic structure and photonic properties. Consequently, BO-HBT exhibits a reduced bandgap (2.55 eV), robust electrochemical stability, a horizontal emitting dipole orientation ratio of 88%, and a high photoluminescence quantum yield of 62.8% in toluene. Density functional theory calculations further elucidate its fluorescence mechanism, revealing that all the frontier orbitals of BO-HBT are predominantly localized in the central pyrene and boron-containing parts and the peripheral biphenyl moieties play a minor role. Hence, the redox and photoluminescence properties of BO-HBT closely resemble those of BO-BPP, a structurally related B/O-fused pyrene system. Notably, BO-HBT demonstrated promising performance as an emitting dopant material in organic light-emitting diodes (OLEDs), achieving an external quantum efficiency of up to 6.2% in the pure green visible region and exceeding 10% in hyperfluorescent devices. These results represent the first successful demonstration of an HBT derivative as an emissive dopant in OLEDs and underscore BO-HBT's potential for advanced optoelectronic applications.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic Thin Film Transistor Material Based Photomultiplication Type Organic Photodetectors via Balancing Hole Tunneling Injection and Transport 基于平衡空穴隧道注入和输运的有机薄膜晶体管光电倍增型有机光电探测器

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202501632

Hongfei Qu, Zuliang Zhuo, Xingchao Zhao, Shuai Zhang, Xiaoling Ma, Ye Zou, Kaixuan Yang, Fujun Zhang

{"title":"Organic Thin Film Transistor Material Based Photomultiplication Type Organic Photodetectors via Balancing Hole Tunneling Injection and Transport","authors":"Hongfei Qu, Zuliang Zhuo, Xingchao Zhao, Shuai Zhang, Xiaoling Ma, Ye Zou, Kaixuan Yang, Fujun Zhang","doi":"10.1002/adom.202501632","DOIUrl":"https://doi.org/10.1002/adom.202501632","url":null,"abstract":"Photomultiplication type organic photodetectors (PM-OPDs) are prepared with organic thin film transistor (OTFT) material PC12TV12T as donor and PC71BM as acceptor, the optimal weight ratio of PC12TV12T to PC71BM is about 100:7. The external quantum efficiency (EQE) of optimal PM-OPDs is 9200% at 370 nm under -8 V bias, resulting from the hole tunneling injection induced by trapped electrons in PC71BM surrounded by PC12TV12T near Al electrode. P3HT is deliberately selected as the third component due to its high absorption coefficient and the lowest unoccupied molecular orbital. The optimal ternary PM-OPDs exhibit the EQE and specific detectivity (D*) of 12600% and 7.63 × 1011 Jones at 370 nm under -8 V bias. Meanwhile, the signal-to-noise (SNR) of PM-OPDs can be increases over twenty times by employing P3HT as a third component, benefiting from the markedly decreased dark current density. This work indicates that PC12TV12T used in OTFT should be an excellent host material for achieving PM-OPDs, benefiting from its high mobility and appropriate energy level.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 29","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sulfur-Containing Perylene Diimide Derivative as Electron Transport Layer in Organic Photovoltaics 含硫苝酰二亚胺衍生物在有机光伏中的电子传输层

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202501655

Ze Qiao, Huitong Deng, Qinan Wang, Qianqing Jiang, Dianyi Liu

{"title":"Sulfur-Containing Perylene Diimide Derivative as Electron Transport Layer in Organic Photovoltaics","authors":"Ze Qiao, Huitong Deng, Qinan Wang, Qianqing Jiang, Dianyi Liu","doi":"10.1002/adom.202501655","DOIUrl":"https://doi.org/10.1002/adom.202501655","url":null,"abstract":"While perylene diimide derivatives such as PDINN and PDINO have demonstrated excellent efficiency as electron transport layers (ETLs) in organic photovoltaic (OPV) devices, the parent compound PDIN exhibits limited solubility in methanol due to its extended conjugated aromatic structure, restricting its practical application. Herein, a sulfur-containing ETL, PDIN-SO, synthesized via a facile one-step process is reported by introducing sulfur dioxide (SO2) gas to PDIN. This straightforward synthetic approach yields a compound with exceptional methanol solubility, addressing a key limitation of conventional materials. OPV devices with PDIN-SO as the ETL demonstrated performance comparable to those utilizing established ETL materials, including PFN-Br and PDINO. Notably, PDIN-SO-based devices exhibited remarkable tolerance to variations in sulfur content, indicating robust processing versatility. When implemented with a PM6: BTP-eC9: L8-BO active layer, optimized devices achieved an impressive power conversion efficiency (PCE) of 18%. This work demonstrates that PDIN-SO, with its simplified synthesis pathway, excellent solubility, and outstanding device performance, represents a promising ETL material that can accelerate the development of high-efficiency, stable OPVs.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 29","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Manipulating Energy Transfer in Multilayer Lanthanide-Based Nanoparticles for Enhanced NIR-II Luminescence and Lifetime Tuning 操纵多层镧系纳米颗粒的能量转移以增强NIR-II发光和寿命调谐

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202501267

Linxuan Zhang, Quanjie Lv, Jing Chu, Yijun Han, Ruihao Yang, Zeinab Marfavi, Gengxin Zhang, Yongjie Wu, Kang Sun, Ke Tao

{"title":"Manipulating Energy Transfer in Multilayer Lanthanide-Based Nanoparticles for Enhanced NIR-II Luminescence and Lifetime Tuning","authors":"Linxuan Zhang, Quanjie Lv, Jing Chu, Yijun Han, Ruihao Yang, Zeinab Marfavi, Gengxin Zhang, Yongjie Wu, Kang Sun, Ke Tao","doi":"10.1002/adom.202501267","DOIUrl":"https://doi.org/10.1002/adom.202501267","url":null,"abstract":"Lanthanide-based multilayer nanoparticles exhibiting near-infrared II (NIR-II, 1,000–1,700 nm) emissions have garnered significant interest for diverse frontier optical applications. However, precisely manipulating emissions simultaneously in intensity and lifetime remains challenging. This study proposes a conceptual model of tuning interfacial energy transfer (IET) in a core–shell–shell nanostructure to spatiotemporally control Er3+ downconversion luminescence and lifetime. Nanoscale manipulation of the interfacial interactions between Er and Yb sublattices enhances downconversion. Additionally, increasing the thickness of Yb3+ interlayer effectively modulates the Nd-Yb-Er energy transfer pathway, simultaneously 8.2-fold of suppressing emission intensity and 1.8-fold prolonging luminescence lifetime. This strategy enables multifunctional tuning of optical properties through combined steady-state excitation and time-gated detection, offering new opportunities for photonic applications such as high-security optical anti-counterfeiting.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 29","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Dark Current Suppression in Near-Infrared Organic Photodetectors with Morphology Control and Self-Assembled Monolayers 利用形态学控制和自组装单层膜增强近红外有机光电探测器的暗电流抑制

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202500362

Wei Fu, Zelong Li, Yifan Ding, Maojie Zhang, Yong Cui, Hong Zhang, Xiaoliang Mo, Rongjun Zhang, Guangzheng Zuo

{"title":"Enhancing Dark Current Suppression in Near-Infrared Organic Photodetectors with Morphology Control and Self-Assembled Monolayers","authors":"Wei Fu, Zelong Li, Yifan Ding, Maojie Zhang, Yong Cui, Hong Zhang, Xiaoliang Mo, Rongjun Zhang, Guangzheng Zuo","doi":"10.1002/adom.202500362","DOIUrl":"https://doi.org/10.1002/adom.202500362","url":null,"abstract":"This study addresses the challenges of high dark current density and low responsivity in near-infrared organic photodetectors (NIR-OPDs) through a synergistic strategy combining morphology control and interface engineering. A thick active layer incorporating solid additives effectively reduces the dark current density while preserving efficient charge transport. Subsequently, molecular interface modification using [2-(9HCarbazol-9-yl)ethyl]phosphonic acid (2PACz) further suppresses the dark current and enhances photoresponsivity. Drift-diffusion modeling, incorporating trap states, reveals that the 2PACz forms a dipole layer at the interface, lowering the injection barrier by ≈0.3 eV and eliminating traps within the device. Together, these strategies reduce the dark current density from the order of 10−5 A cm−2 (control) to the order of 10−8 A cm−2 at −1 V, and enhance the responsivity (R) from 0.50 A W−1(control) to 0.58 A W−1 at 864 nm. The resulting device exhibits a high shot-noise-limited specific detectivity (Dsℎ∗) reaching 9.57 × 1013 Jones, highlighting its exceptional sensitivity. This study demonstrates that combining morphology control with interface engineering effectively overcomes key performance limitations in NIR-OPDs, providing valuable insights for the design of high-performance organic photodetectors.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perovskite Light Emitting Diodes Based on Zinc Oxide Electron Transport Layers: Recent Advances and Challenges 基于氧化锌电子传输层的钙钛矿发光二极管：最新进展和挑战

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202501468

Zhen-Yu Ma, Yong-Hui Song, Bai-Sheng Zhu, Yi-Chen Yin, Yi Xiao, Sami Ur Rahman, Guan-Jie Ding, Hong-Bin Yao

{"title":"Perovskite Light Emitting Diodes Based on Zinc Oxide Electron Transport Layers: Recent Advances and Challenges","authors":"Zhen-Yu Ma, Yong-Hui Song, Bai-Sheng Zhu, Yi-Chen Yin, Yi Xiao, Sami Ur Rahman, Guan-Jie Ding, Hong-Bin Yao","doi":"10.1002/adom.202501468","DOIUrl":"https://doi.org/10.1002/adom.202501468","url":null,"abstract":"Zinc oxide (ZnO) electron transport layers (ETLs) have been widely used in solution-processed light-emitting diodes (LEDs) due to their high electron mobility, thermal stability, and low cost. Recently, integrating ZnO ETLs with perovskite emitters, known for their high defect tolerance, tunable emission wavelengths, and high color purity, has garnered significant attention as candidates for next-generation LEDs. This integration has recently demonstrated excellent near-infrared perovskite LEDs (PeLEDs) but has not yet succeeded in three-primary-color PeLEDs. This review summarizes recent advancements and challenges in PeLEDs based on ZnO ETLs, aiming to provide a roadmap for future development of high-performance PeLEDs for high definition displays. The fabrication processes of ZnO ETL-based PeLEDs, focusing on the compatibility of ZnO ETLs and perovskite emitters deposition techniques, are thoroughly discussed. Particular attention is given to the interfacial interactions between ZnO ETLs and perovskite emitters, as well as the optimization strategies. Additionally, recent advances in the performance of ZnO ETL-based PeLEDs including near-infrared, red, green, and blue emissions are systematically summerized and the specific requirements for enhancing performance of PeLEDs at each color are clearly presented. Finally, an outlook on promising research directions to improve the performance of ZnO ETL-based PeLEDs is provided.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 29","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All-Visible Light-Switchable Thin-Film Transistor 全可见光可切换薄膜晶体管

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-06 DOI: 10.1002/adom.202501408

Taibin Wang, Paolo Samorì, Lili Hou

{"title":"All-Visible Light-Switchable Thin-Film Transistor","authors":"Taibin Wang, Paolo Samorì, Lili Hou","doi":"10.1002/adom.202501408","DOIUrl":"10.1002/adom.202501408","url":null,"abstract":"Stimuli-responsive organic thin-film transistors (TFTs), such as light-switchable TFTs, are key components for multifunctional optoelectronics beyond Moore. However, the modulation of the light-switchable TFTs output developed so far requires the use of ultraviolet (UV) light, despite the latter triggers photooxidation and degradation of the molecular materials and hybrids thereof. Herein, an all-visible light-switchable TFT is reported whose current output can be reversibly interconverted between two different states by non-coherent and low-power (<1 mW cm−2) visible light. The light-sensitive material is assembled by blending CdS quantum dots (QDs) coated by photochromic diarylethene (DAE) molecules with a semiconducting p-type poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (DPP-DTT). For the first time, triplet energy transfer (TET) at the organic-inorganic interface between photochromic molecules and QDs is exploited to drive light-switchable TFTs devices, enabling DAEs reversible photoisomerization when exposed to 405 nm and 515 nm visible light. Significantly, the conversion efficiency of DAEs via all-visible-light switching is comparable to that achieved under UV light irradiation, while the light switching fatigue resistance of the devices displayed a radical improvement. The work provides a new pathway to realize all-visible-light activated devices for future design of advanced digital optoelectronics in the context of next-generation data storage technologies and neuromorphic computing.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145111026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0