Advanced Optical Materials最新文献_第10页

Angle-Dependent Dynamic Fluorescent Anti-Counterfeiting of Multilayer Flexible Structure for High-Capacity 3D Luminescent Barcodes 大容量三维发光条形码多层柔性结构角度动态荧光防伪研究

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-13 DOI: 10.1002/adom.202500540

Lixue Yang, Xing Liu, Min Huang, Xiu Li, Jiong Liang, Yuankun Zhang, Gen Li, Yiqiang Li, Huicong Cao, Fangyuan Liu, Qiang Wang

{"title":"Angle-Dependent Dynamic Fluorescent Anti-Counterfeiting of Multilayer Flexible Structure for High-Capacity 3D Luminescent Barcodes","authors":"Lixue Yang, Xing Liu, Min Huang, Xiu Li, Jiong Liang, Yuankun Zhang, Gen Li, Yiqiang Li, Huicong Cao, Fangyuan Liu, Qiang Wang","doi":"10.1002/adom.202500540","DOIUrl":"https://doi.org/10.1002/adom.202500540","url":null,"abstract":"Dynamic fluorescent anticounterfeiting, which converts external stimuli into intuitive color changes, faces challenges due to low encryption levels and complex stimulation requirements. Here, a multilayer flexible structure combining dielectric microsphere cavity arrays (MCA), quantum dot polymer composites films (QDs), and polydimethylsiloxane (PDMS) to enhance anticounterfeiting performance is presented. The MCA/QDs/PDMS/QDs (MQPQ) flexible structure, fabricated by screen printing, exhibits angle-dependent variations in both color and brightness under ultraviolet excitation. Four distinct MQPQ structures with different quantum dot emissions realize widely tunable hue conversion. Experimental and theoretical investigations reveal that the directional antenna effect significantly contributes to the optically variable mechanism. The MQPQ structure is extended to 3D dynamic fluorescent barcodes, where variations in stripe brightness and color provide enhanced information storage. Up to five distinct barcode patterns can be read from different angles, improving both storage capacity and security. This approach, requiring only a single excitation light, offers simplicity, universality, and advanced anticounterfeiting potential.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 20","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene as Infrared and Electron Transparent Electrode Applied to the Design of Narrow Bandgap Nanocrystal-Based Photodiode 石墨烯作为红外和电子透明电极在窄带隙纳米晶光电二极管设计中的应用

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-13 DOI: 10.1002/adom.202500708

Dario Mastrippolito, Albin Colle, Clement Gureghian, Tommaso Gemo, Adrien Khalili, Mariarosa Cavallo, Erwan Bossavit, Huichen Zhang, Yanjun Ma, Yoann Prado, James K. Utterback, Gregory Vincent, Nicolas Péré-Laperne, Ding Pei, Pavel Dudin, José Avila, Debora Pierucci, Emmanuel Lhuillier

{"title":"Graphene as Infrared and Electron Transparent Electrode Applied to the Design of Narrow Bandgap Nanocrystal-Based Photodiode","authors":"Dario Mastrippolito, Albin Colle, Clement Gureghian, Tommaso Gemo, Adrien Khalili, Mariarosa Cavallo, Erwan Bossavit, Huichen Zhang, Yanjun Ma, Yoann Prado, James K. Utterback, Gregory Vincent, Nicolas Péré-Laperne, Ding Pei, Pavel Dudin, José Avila, Debora Pierucci, Emmanuel Lhuillier","doi":"10.1002/adom.202500708","DOIUrl":"https://doi.org/10.1002/adom.202500708","url":null,"abstract":"Colloidal nanocrystals (NCs) are a promising platform for infrared optoelectronics. Current efforts focus on designing NCs that absorb in the short- and mid-wave infrared and integrating them into diode stacks. A major challenge is to coupling these sensors to read-out integrated circuits (ROICs) for infrared imaging, which requires infrared-transparent top electrodes. Conventional materials like tin-doped indium oxide lose transparency at longer wavelengths, limiting their effectiveness. Metallic grids have emerged as an alternative but struggle to maintain a uniform potential, as shown by nanobeam X-ray photoemission microscopy. To address this, graphene is explored as a transparent electrode. A novel diode stack is proposed to maintain a backside mirror, accommodate HgTe NCs’ chemical constraints, and incorporate electrodes that efficiently extract both electrons and holes. Unlike conventional designs limited to near-zero bias, this stack operates optimally under CMOS read-out-integrated-circuit (ROIC) conditions. Additionally, its transparent electrode allows photoelectron emission from within the diode, enabling in situ electric field analysis. This capability enables to rationalize the optimization process of photodiode design.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 21","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202500708","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Narrow-Bandwidth Emissive Carbon Dots: Regulation of Optical Properties and Applications 窄带发射碳点：光学特性的调控及其应用

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-13 DOI: 10.1002/adom.202500148

Heng Li, Jingxia Zheng, Yongzhen Yang, Lin Chen, Xuguang Liu

{"title":"Narrow-Bandwidth Emissive Carbon Dots: Regulation of Optical Properties and Applications","authors":"Heng Li, Jingxia Zheng, Yongzhen Yang, Lin Chen, Xuguang Liu","doi":"10.1002/adom.202500148","DOIUrl":"https://doi.org/10.1002/adom.202500148","url":null,"abstract":"Narrow-bandwidth emissive carbon dots (NBE-CDs) are a new class of narrow-bandwidth emissive fluorescent materials, with the advantages of abundant sources, easy modification, low toxicity, low cost, and solution processing. Compared with traditional carbon dots, NBE-CDs exhibit narrow full width at half maximum (FWHM), endowing them with unique properties, such as high spectral resolution, high color purity, and high photoluminescence quantum yield, and consequently making them ideal candidates for advanced applications in optoelectronic devices, chemical sensing, and bioimaging. This review summarizes the research progress of NBE-CDs in recent years, including synthesis methods, FWHM regulation, and applications. Most of all, the regulation strategy of the FWHM of NBE-CDs in liquid/solid state is highlighted, aiming at clarifying the relationship among the structure of carbon sources, the structure of NBE-CDs, and their FWHM property. Besides, the existing challenges and prospects of NBE-CDs are discussed, expecting to further promote the practical applications of NBE-CDs in multiple fields.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 16","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144232248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Particle Plasmon Spectroscopy Revealing the Local Strain-Induced Band Structure Change in 2D Semiconductors 揭示二维半导体中局部应变诱导能带结构变化的单粒子等离子体光谱

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500158

Xing Zhen, Huazhen Wu, Wenyong Feng, Haowen Chen, Jing Wang, Huanjun Chen, Ningsheng Xu, Lei Shao, Shao-Zhi Deng

{"title":"Single-Particle Plasmon Spectroscopy Revealing the Local Strain-Induced Band Structure Change in 2D Semiconductors","authors":"Xing Zhen, Huazhen Wu, Wenyong Feng, Haowen Chen, Jing Wang, Huanjun Chen, Ningsheng Xu, Lei Shao, Shao-Zhi Deng","doi":"10.1002/adom.202500158","DOIUrl":"https://doi.org/10.1002/adom.202500158","url":null,"abstract":"Band structure engineering by local strain of 2D transition metal dichalcogenides (TMDCs) is proven as an efficient means for improving the material performance in nanoscale light sources, photodetectors and flexible electronic devices. However, photoluminescence-based techniques continue encountering challenges in detecting changes in band structures, mainly because of the indirect bandgap nature of the multilayer TMDCs as well as the exciton diffusion at room temperature. Herein, it is demonstrated that with the help of plasmonic nanostructures, dark-field-scattering-based single-particle plasmon spectroscopy can reveal the Fano interference between well aligned localized surface plasmon resonances and the 2D semiconductor excitonic or interband-transition absorptions, therefore enabling precise detection of local band structure modulation in few-layer and multilayer TMDCs under mechanical stress. By measuring the scattering spectra of individual plasmonic nanostructures covered by WS2, it is shown that the local strain results in an up-to-50 meV shift for the direct K–K transition. The accuracy of the method is further confirmed by plasmon-enhanced photoluminescence examinations. It is believed that the results offer a robust and high-precision method to probe the local band structure change in 2D semiconductors, which will greatly boost the development of novel 2D optoelectronic devices.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 16","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144232221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Designing Band-Edge Emissive AgInS2 Nanocrystals via Composition and Structure Control 基于成分和结构控制的带边发射AgInS2纳米晶体设计

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500331

Ju Ho Kim, Jiwoon Song, Yurim Park, Hyunseob Lim, Jiwon Bang

{"title":"Designing Band-Edge Emissive AgInS2 Nanocrystals via Composition and Structure Control","authors":"Ju Ho Kim, Jiwoon Song, Yurim Park, Hyunseob Lim, Jiwon Bang","doi":"10.1002/adom.202500331","DOIUrl":"https://doi.org/10.1002/adom.202500331","url":null,"abstract":"Colloidal semiconductor nanocrystals (NCs) of ternary I–III–VI compounds are promising luminescent materials for photonic and optoelectronic applications. However, defect-induced broad trap emission dominates, and achieving band-edge photoluminescence (PL) without appropriate shell coating remains challenging. This study introduces a synthesis route and optical characterization results of weakly quantum-confined In-rich AgInS2 NCs, which exhibit spectrally narrow band-edge PL in the red spectral range. Leveraging precursor stoichiometry and growth condition optimization, band-edge emissive AgInS2 NCs with mitigated defect emission are realized. Structural analysis of the NCs reveals a stoichiometric AgInS2 core surrounded by an In-enriched surface layer, facilitating efficient exciton radiative relaxation pathways. With NC diameters approaching the exciton Bohr diameter of the bulk semiconductor, the PL peak energies of AgInS2 NCs align closely with the bulk bandgap (2.0 eV), and these NCs exhibit spectrally pure emission with reduced batch-to-batch variation for red emission. The band-edge PL properties are remarkably improved by coating a GaSx shell that effectively suppresses the residual trap emission and reduces nonradiative recombination, thereby enhancing the overall emission efficiency. These findings provide new insights into composition-controlled optical property regulation of ternary semiconductor NCs and underscore their potential for photonic and optoelectronic applications.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 18","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling Transition from 1-Photon to 2-Photon Induced Photon Drag Current in Vertically Grown GaS by Terahertz Emission Spectroscopy 利用太赫兹发射光谱揭示垂直生长气体中由1光子到2光子诱导光子拖流的转变

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500266

Fan Wang, Zeyun Wang, Xueqin Cao, Jinhong Liu, Xukun Feng, Guorong Xu, Yayan Xi, Leidong Xing, Yuanyuan Huang, Xinlong Xu

{"title":"Unveiling Transition from 1-Photon to 2-Photon Induced Photon Drag Current in Vertically Grown GaS by Terahertz Emission Spectroscopy","authors":"Fan Wang, Zeyun Wang, Xueqin Cao, Jinhong Liu, Xukun Feng, Guorong Xu, Yayan Xi, Leidong Xing, Yuanyuan Huang, Xinlong Xu","doi":"10.1002/adom.202500266","DOIUrl":"https://doi.org/10.1002/adom.202500266","url":null,"abstract":"The nonlinear photon drag current offers a promising platform for fundamental understanding of nonlinear optical physics and application of modern nonlinear optoelectronic devices. However, the fine differentiation of both first-order and second-order photon drag current from other photocurrents is in challenge and calls for a universal method and experimental design. Herein, a wavelength-tunable terahertz (THz) emission spectroscopy as an all-optical method is proposed to probe ultrafast photocurrents in vertically grown GaS with high nonlinear optical coefficients. Based on the rich THz spectroscopic information, a systematic method is established to differentiate the photon drag effect induced by single-photon absorption (SPA-PDE, first order) and that induced by two-photon absorption (TPA-PDE, second order) among other linear and nonlinear optical photocurrents. The intriguing transition occurs from SPA-PDE to TPA-PDE under above- to below-bandgap excitation, deepening the understanding of PDE in wide-bandgap semiconductors. Quantitatively, the contribution ratio of drift current to SPA-PDE is calculated as 0.71:0.29 with above-bandgap excitation and the ratio of rectification current to TPA-PDE changes to 0.24:0.76 under below-bandgap excitation. This work proposes a universal framework to disentangle different photocurrents, especially SPA-PDE and TPA-PDE in THz emission spectroscopy both qualitatively and quantitatively, pushing THz technology toward modern ultrafast higher-order nonlinear optics.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 19","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144551233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Antisolvent Treatment for Antimony Selenide Thin Film Augmenting Optoelectronic Performance 硒化锑薄膜增强光电性能的抗溶剂处理

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500175

Akshay Vishwanathan Vidyanagar, Stenny Benny, Sarpangala Venkataprasad Bhat

{"title":"Antisolvent Treatment for Antimony Selenide Thin Film Augmenting Optoelectronic Performance","authors":"Akshay Vishwanathan Vidyanagar, Stenny Benny, Sarpangala Venkataprasad Bhat","doi":"10.1002/adom.202500175","DOIUrl":"https://doi.org/10.1002/adom.202500175","url":null,"abstract":"Simple binary metal chalcogenides, such as Sb₂Se₃, are promising for low-cost, solution-processed optoelectronic applications due to their strong anisotropic nature. However, achieving high-quality Sb₂Se₃ films via spin coating remains challenging because of the slow evaporation of high-boiling-point solvents and the need for extended annealing to remove residual anionic impurities. While previous efforts have focused on optimizing precursor chemistry and annealing conditions, effective strategies to improve film quality during deposition remain underexplored. Here, antisolvent treatment is introduced as a novel and effective approach to enhance Sb₂Se₃ film quality, utilizing an elemental precursor ink in a thiol-amine cosolvent. The study systematically investigates the impact of seven different antisolvents and identifies ethanol as the most effective choice, enabling the formation of dense, uniform Sb₂Se₃ film with enhanced crystallinity, preferential [020] grains, reduced surface oxide impurities, and improved visible light absorption. As a result, CdS/Sb₂Se₃ heterojunction solar cells fabricated with treated films exhibit a two-fold increase in efficiency, while Sb₂Se₃-based photodetectors show a four-fold enhancement in responsivity compared to the devices made with untreated films. The findings demonstrate that antisolvent treatment is a powerful tool for improving the quality of solution-processed chalcogenide films, paving the way for their broader application in optoelectronic devices.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 17","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inorganic Ligands Boosted Hybrid Infrared Photodetection via Energy Level Alignment and Interface Charge Transfer 无机配体通过能级对准和界面电荷转移增强混合红外光探测

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500564

Yuanze Hong, Jinchun Li, Zhipeng Wei, Xiaohua Wang, Xuechao Yu

{"title":"Inorganic Ligands Boosted Hybrid Infrared Photodetection via Energy Level Alignment and Interface Charge Transfer","authors":"Yuanze Hong, Jinchun Li, Zhipeng Wei, Xiaohua Wang, Xuechao Yu","doi":"10.1002/adom.202500564","DOIUrl":"https://doi.org/10.1002/adom.202500564","url":null,"abstract":"Surface ligands do not merely enhance the environmental stability of quantum dots (QDs) but also exert a profound influence on their photoelectric characteristics. Short-chain ligands facilitate interfacial electrical coupling between QD, thereby significantly enhancing the capture and transport of charge carriers under photoexcitation in photodetectors. The impact of ligand properties on charge transport has been widely elucidated, while the critical role of inorganic ligand energy levels in the transfer and recombination of photogenerated carriers remains insufficiently investigated. In this study, different metal chalcogenides are employed as ligands to enhance the performance of the PbS QDs-graphene hybrid photodetectors. The responsivity of hybrid devices modified by Na3AsS4 ligand is enhanced by an order of magnitude compared to the Na4SnS4 ligand-modified devices. The highest occupied molecular orbital (HOMO) energy level of the Na3AsS4 ligand and the valence band of the QDs exhibit a smaller energy difference compared to those of the Na4SnS4 ligand, which significantly enhances the capture and transfer efficiency of photogenerated holes. The results underscore the essential role of inorganic ligands, providing important implications for the future development of high-performance optoelectronic devices utilizing ligand-modified QDs.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 20","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

InGaZnO Optoelectronic Synaptic Transistor for Reservoir Computing and LSTM-Based Prediction Model 用于储层计算的InGaZnO光电突触晶体管及基于lstm的预测模型

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202500634

Suyong Park, Seongmin Kim, Sungjoon Kim, Kyungchul Park, Donghyun Ryu, Sungjun Kim

{"title":"InGaZnO Optoelectronic Synaptic Transistor for Reservoir Computing and LSTM-Based Prediction Model","authors":"Suyong Park, Seongmin Kim, Sungjoon Kim, Kyungchul Park, Donghyun Ryu, Sungjun Kim","doi":"10.1002/adom.202500634","DOIUrl":"https://doi.org/10.1002/adom.202500634","url":null,"abstract":"This study presents a reservoir computing (RC) system utilizing an indium gallium zinc oxide (IGZO)-based optoelectronic synaptic transistor (OST) for neuromorphic computing applications. The proposed IGZO-based OST harnesses the effects of persistent photoconductivity in the IGZO channel and charge trapping at the IGZO/tantalum oxide interface to emulate the short-term synaptic behavior. By optical stimuli, the device achieves dynamic reservoir states with nonlinear and time-dependent characteristics, enhancing its capability for temporal data processing. Moreover, the system effectively performs pattern recognition tasks, attaining high classification accuracies of 95.75% and 85.02% on the MNIST and Fashion MNIST datasets, respectively. Additionally, the device replicates nociceptive behaviors, such as allodynia and hyperalgesia, under optical stimulation, showcasing its potential for bio-inspired sensory applications. An LSTM-based prediction model is developed using Jena climate data, incorporating a method that mimics synaptic weight variation to assess its impact on performance. This approach demonstrates the feasibility of hardware-friendly neural networks via biologically inspired weight adjustments, outperforming conventional forecasting models. Notably, the model achieves a normalized root mean square error (NRMSE) as low as 0.0145, highlighting its high prediction accuracy.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 21","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic Integration of Sub-50 nm III–V Nano-Heterostructures on Si (001) for Telecom Photonics 电信光子学用Si（001）上亚50 nm III-V纳米异质结构的单片集成

IF 8 2区材料科学

Advanced Optical Materials Pub Date : 2025-05-12 DOI: 10.1002/adom.202403419

Alisha Nanwani, Paweł Wyborski, Michael S. Seifner, Shima Kadkhodazadeh, Grzegorz Sęk, Kresten Yvind, Paweł Holewa, Elizaveta Semenova

{"title":"Monolithic Integration of Sub-50 nm III–V Nano-Heterostructures on Si (001) for Telecom Photonics","authors":"Alisha Nanwani, Paweł Wyborski, Michael S. Seifner, Shima Kadkhodazadeh, Grzegorz Sęk, Kresten Yvind, Paweł Holewa, Elizaveta Semenova","doi":"10.1002/adom.202403419","DOIUrl":"https://doi.org/10.1002/adom.202403419","url":null,"abstract":"The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance, cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its mature fabrication processes, stands as an ideal platform. However, its inherent indirect bandgap leads to inefficient light emission. The integration of III-V materials is essential to overcome this drawback. These materials are recognized for their efficient light emission and superior bandgap engineering, making them indispensable in photonics and beyond. Here, we present the monolithic integration of small-volume III-V nano-heterostructures with silicon via selective area epitaxy in pyramidal openings etched in (100)-oriented silicon substrate. Precise positioning of the nano-heterostructures is achieved using electron beam lithography. Atomic resolution imaging and chemical analysis confirm the epitaxial nature of InP growth, revealing well-defined heterointerfaces. Each structure incorporates an InAsP quantum dot-like active medium, and the correlation of the growth parameters with the nanoscale structure is analyzed using advanced electron microscopy. Eight-band k·p calculations demonstrate energy level quantization in three spatial dimensions. Optical characterization shows that heterostructure emission can be engineered to cover the entire telecom wavelength range. These InAsP/InP nano-heterostructures can serve as gain medium for silicon-based hybrid nano-lasers, nano-LEDs, and quantum light sources in telecom wavelength range.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 15","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202403419","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144148469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0