发布求助
文献互助 智能选刊 最新文献

ECS Transactions最新文献

筛选
英文 中文
Comparison of MEA Degradation through FCV Actual Driving Test and Load-Cycle Durability Test 通过FCV实际驾驶试验和负载循环耐久性试验比较MEA退化
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11204.0157ecst
Shota Katayama, Masashi Matsumoto, Hideto Imai, Takahiko Asaoka, Kazuki Amemiya
{"title":"Comparison of MEA Degradation through FCV Actual Driving Test and Load-Cycle Durability Test","authors":"Shota Katayama, Masashi Matsumoto, Hideto Imai, Takahiko Asaoka, Kazuki Amemiya","doi":"10.1149/11204.0157ecst","DOIUrl":"https://doi.org/10.1149/11204.0157ecst","url":null,"abstract":"The degradation of a membrane electrode assembly (MEA) after an actual driving test was analyzed, and its mechanism was compared with that of a load-cycle durability test in a laboratory. MEA samples were extracted from an FC stack of a Toyota MIRAI 2014th model which had been operated in actual driving of 200,000 km for approximately 6000 h. The degradation distribution across the MEA plane was found to be insignificant. The electrolyte membrane did not show significant degradation affecting its properties following the durability tests. The MEA performance degradation is primarily attributed to the deterioration of the catalyst activity and oxygen transport properties in the catalyst layer, which is mainly caused by catalyst coarsening. The degradation was well simulated by the NEDO load-cycle durability test of 30,000 cycles. The evaluation results are applicable to validation of AST protocols and model-simulation of MEA degradation.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Benchmarking of Beyond the State-of-the-Art Vertical GaN Devices (特邀)超越最先进的垂直GaN器件的基准测试
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11202.0023ecst
Ulf Gisslander, Mietek Bakowski
{"title":"(Invited) Benchmarking of Beyond the State-of-the-Art Vertical GaN Devices","authors":"Ulf Gisslander, Mietek Bakowski","doi":"10.1149/11202.0023ecst","DOIUrl":"https://doi.org/10.1149/11202.0023ecst","url":null,"abstract":"In this paper theoretical benchmarking of semi-vertical and vertical gallium nitride (GaN) MOSFETs with rated voltage of 1.2 kV to 3.3 kV is performed against silicon carbide (SiC) devices. Limitations of the semi-vertical and vertical state-of-the-art GaN structures have been investigated by simulations. Specific design features and technology requirements for realization of high voltage vertical GaN MOSFETs are discussed and implemented in simulated structures. The main modifications to the structures are reduced cell pitch and introduction of electric field shielding implantation and thick oxide at the gate trench bottom and p-type implanted junction termination. The main findings are: (a) specific on-resistance of vertical GaN devices is 75% and 40% of that for 1.2 kV and 3.3 kV SiC MOSFETs, respectively, (b) semi-vertical GaN show no advantage over SiC MOSFETs for medium and high voltage devices over 1 kV, (c) vertical GaN has potential advantage for high and ultra-high voltage devices.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring Proton Activity at the Membrane/Electrode Interface with Microelectrodes 利用微电极探索膜/电极界面上的质子活性
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11204.0323ecst
Grace C. Anderson, Siddharth Rajupet, John G. Petrovick, Douglas I. Kushner, Alexis T. Bell, Adam Z. Weber
{"title":"Exploring Proton Activity at the Membrane/Electrode Interface with Microelectrodes","authors":"Grace C. Anderson, Siddharth Rajupet, John G. Petrovick, Douglas I. Kushner, Alexis T. Bell, Adam Z. Weber","doi":"10.1149/11204.0323ecst","DOIUrl":"https://doi.org/10.1149/11204.0323ecst","url":null,"abstract":"Microelectrode measurements using a polycrystalline platinum microelectrode were used to simulate the membrane/electrode interface of a membrane-electrode-assembly (MEA) architecture. The proton activity for the hydrogen-evolution reaction (HER) was evaluated for 40, 60, and 80% relative humidity. Proton activity was calculated to be 0.5, 1.0 and 2.0 for 40, 60, and 80% relative humidity, respectively, using open circuit potential measurements between Nafion 211 and 1 molal HClO 4 . The fraction of protons which dissociate at a given relative humidity condition appears to be a distinctive factor in proton activity for Nafion 211 compared to an aqueous electrolyte. The microelectrode measurements exhibited a Tafel slope of ~120 mV/dec, similar to that observed for platinum in MEA systems, demonstrating that kinetic measurements made with microelectrodes can be representative of MEA kinetics.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Xe Filling of MEMS Vapor Cells Empowered by Customized Triple Stack Wafer Bond Processing 利用定制的三层晶圆键合工艺实现MEMS蒸汽电池的高效Xe填充
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11203.0221ecst
Ali Roshanghias, Jaroslaw Kaczynski, Augusto Rodrigues, Martina Hübner, Markus Zauner, Giovanna Grosso, Nikolai Andrianov, Muhammad Khan, Thomas Grömer, Tino Fuchs, Alfred Binder
{"title":"Efficient Xe Filling of MEMS Vapor Cells Empowered by Customized Triple Stack Wafer Bond Processing","authors":"Ali Roshanghias, Jaroslaw Kaczynski, Augusto Rodrigues, Martina Hübner, Markus Zauner, Giovanna Grosso, Nikolai Andrianov, Muhammad Khan, Thomas Grömer, Tino Fuchs, Alfred Binder","doi":"10.1149/11203.0221ecst","DOIUrl":"https://doi.org/10.1149/11203.0221ecst","url":null,"abstract":"Nuclear-magnetic-resonance (NMR) gyroscopes based on MEMS vapor cell technology are currently being investigated worldwide and show superior advantages over current MEMS gyroscopes. However, there are still challenges in the upscaling and further deployment of NMR gyroscopes, due to the extremely high cost of the required gases (i.e., 129Xe, 131Xe), size, and high power consumption. To tackle these bottlenecks, in this study, a miniaturized, chip-scale, and low-cost NMR gyroscope has been conceptualized and fabricated. Here, a cost-effective and scalable filling of MEMS vapor cells with Xe gas was developed via an innovative microfabrication and wafer stacking process flow. By utilizing ultra-thin glass wafers, Taiko-processed silicon wafers, and an external gas flow system integrated into the wafer bonder, a sequential anodic bonding technique is executed to create a hermetically sealed Xe gas-filled chamber at minimal Xe consumption during the filling process.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Supporting Microporous Layer for Polymer Electrolyte Fuel Cells 聚合物电解质燃料电池的自支撑微孔层
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11204.0083ecst
Makoto Yoshikawa, Kotaro Yamamoto, Zhiyun Noda, Masahiro Yasutake, Tatsumi Kitahara, Yuya Tachikawa, Stephen Matthew Lyth, Akari Hayashi, Junko Matsuda, Kazunari Sasaki
{"title":"Self-Supporting Microporous Layer for Polymer Electrolyte Fuel Cells","authors":"Makoto Yoshikawa, Kotaro Yamamoto, Zhiyun Noda, Masahiro Yasutake, Tatsumi Kitahara, Yuya Tachikawa, Stephen Matthew Lyth, Akari Hayashi, Junko Matsuda, Kazunari Sasaki","doi":"10.1149/11204.0083ecst","DOIUrl":"https://doi.org/10.1149/11204.0083ecst","url":null,"abstract":"The gas diffusion layer (GDL) used in a PEFC is thicker than the electrode catalyst layer and electrolyte membrane. Thinning down the GDL can reduce gas diffusion resistance and volumetric power density of PEFC stacks. In this study, MPL/GDL is prepared by printing microporous layers (MPLs) on carbon meshes of several tens of micrometers thick as substrates for thin-layer GDLs. Through various current-voltage and overvoltage measurements and microstructural analysis of the cells using these thin-layer MPL/GDLs, cell performance has been improved, equivalent to that of the state of the MPL/GDL.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of Liquid Water Transport in Cathode of PEFC Using Wettability-Patterned Electrodes 利用润湿性图案电极控制PEFC阴极的液态水输运
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11204.0063ecst
Reiya Kaneko, Vedant Chate, Kosuke Nishida
{"title":"Control of Liquid Water Transport in Cathode of PEFC Using Wettability-Patterned Electrodes","authors":"Reiya Kaneko, Vedant Chate, Kosuke Nishida","doi":"10.1149/11204.0063ecst","DOIUrl":"https://doi.org/10.1149/11204.0063ecst","url":null,"abstract":"To address the issue of flooding in polymer electrolyte fuel cells (PEFCs), it becomes imperative to devise an electrode structure capable of actively removing accumulated liquid water within the gas diffusion electrode (GDE). This study aimed to construct a wettability patterned electrode by applying a hydrophilic solution onto the cathode-side gas diffusion layer (GDL). Furthermore, the distribution of liquid water within the patterned electrode during PEFC operation was visualized using X-ray imaging and image processing technology. As a result, it was confirmed that the introduction of a wettability patterned electrode structure enables liquid water transport control during operation and reduces the saturation of liquid water around the hydrophilic region.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Soft Surface Activated Bonding of Hydrophobic Silicon Substrates 疏水硅衬底的软表面活化键合
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11203.0139ecst
Quentin Lomonaco, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, Frank Fournel
{"title":"Soft Surface Activated Bonding of Hydrophobic Silicon Substrates","authors":"Quentin Lomonaco, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, Frank Fournel","doi":"10.1149/11203.0139ecst","DOIUrl":"https://doi.org/10.1149/11203.0139ecst","url":null,"abstract":"Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified, to better understand bonding mechanisms. Soft activation parameters on hydrophobic silicon substrates yield exceptionally thin bonding interfaces with acceptable bonding energy at room temperature. According to cross-sectional Transmission Electron Microscopy imaging, a 0.53 nm thick amorphous silicon interface was achieved with an adherence energy of 1337 ± 137 J/m² measured by the Double Cantilever Beam method.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135246854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Regeneration Strategies for Ruthenium-Poisoned ORR Catalysts in Reformate PEM Fuel Cells 重整型PEM燃料电池中钌中毒ORR催化剂的再生策略
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11204.0389ecst
Qiang Guo, Frédéric Hasché, Mehtap Oezaslan
{"title":"Regeneration Strategies for Ruthenium-Poisoned ORR Catalysts in Reformate PEM Fuel Cells","authors":"Qiang Guo, Frédéric Hasché, Mehtap Oezaslan","doi":"10.1149/11204.0389ecst","DOIUrl":"https://doi.org/10.1149/11204.0389ecst","url":null,"abstract":"PEM fuel cells operating on reformate gases suffer from Ru crossover and its re-deposition in the cathode catalyst layer. Therefore, strategies for regeneration of Ru-poisoned ORR catalysts are needed. Here, we developed a regeneration protocol and tested this for commercial PtRu 2 /Vulcan, which represents a worst case scenario of Ru-poisoned ORR catalysts due to the high Ru content and good intermixture with Pt. Our protocol consists of two chronoamperometric cycles, namely at 1.4 V RHE for 5 minutes followed by 1.6 V RHE for 100 s. The Ru deletion as a function of the number of regeneration cycles was in-situ monitored by electrochemical CO stripping method. The mass and specific ORR activities of the recovered PtRu 2 /Vulcan increase by 6-times and 4.4-times, respectively. Very remarkably, our regeneration protocol aims to trigger the Ru dissolution by forming the RuO 4 during the OER without a negative impact on the catalytic ORR properties of Pt.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135199844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Cleanliness and High Hydrophobic/Hydrophilic Contrast Done by Direct Wafer Bonding for Die-to-Wafer Self-Assembly 通过直接晶圆键合实现高清洁度和高疏水/亲水性对比
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11203.0181ecst
Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel
{"title":"High Cleanliness and High Hydrophobic/Hydrophilic Contrast Done by Direct Wafer Bonding for Die-to-Wafer Self-Assembly","authors":"Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel","doi":"10.1149/11203.0181ecst","DOIUrl":"https://doi.org/10.1149/11203.0181ecst","url":null,"abstract":"We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Hybrid Bonding for 3D Applications: Improvements and Limitations (邀请)3D应用的混合键合:改进和限制
ECS Transactions Pub Date : 2023-09-29 DOI: 10.1149/11203.0063ecst
Emilie Deloffre, Bassel Ayoub, Sandrine Lhostis, Florent Dettoni, Frank Fournel, Pierre Montméat, Sebastien Mermoz
{"title":"(Invited) Hybrid Bonding for 3D Applications: Improvements and Limitations","authors":"Emilie Deloffre, Bassel Ayoub, Sandrine Lhostis, Florent Dettoni, Frank Fournel, Pierre Montméat, Sebastien Mermoz","doi":"10.1149/11203.0063ecst","DOIUrl":"https://doi.org/10.1149/11203.0063ecst","url":null,"abstract":"With hybrid bonding pitch reduction, many challenges are arising such as optimized metrology measurement, bonding wave propagation understanding and hybrid surface characterization. By analyzing incoming wafer and how tool setting impacts bonding, overlay values below 110 nm for production wafers can be achieved with 100% electrical yield. Hybrid bonding extends further to IC Logic application or Memory and not only CMOS image sensor. For some of those products, the temperature of usual post bonding thermal annealing (400°C) cannot be applied. Consequently, many studies have been performed on developing low-temperature bonding. To add flexibility to hybrid bonding, new processes such as Surface Activation Bonding (SAB) and Die to Wafer bonding (D2W) have been developed to fit heterogenous integration.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135200036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信