发布求助
文献互助 智能选刊 最新文献

ECS Transactions最新文献

筛选
英文 中文
A Model Validatory Approach in Determining Solar Panel Tilting Angles and Orientations at the Brikama Environment of The Gambia 冈比亚布里卡马环境中确定太阳能电池板倾斜角度和方向的模型验证方法
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11310.0009ecst
T. J. Ayua, Musa Camara
{"title":"A Model Validatory Approach in Determining Solar Panel Tilting Angles and Orientations at the Brikama Environment of The Gambia","authors":"T. J. Ayua, Musa Camara","doi":"10.1149/11310.0009ecst","DOIUrl":"https://doi.org/10.1149/11310.0009ecst","url":null,"abstract":"This paper determines the solar panel optimal tilt angle and orientations at the Brikama environment of The Gambia. This was achieved by comparing mathematical model results with experimental data collected using a PV module (Model AP-120) manufactured by AstroPower, USA, and a single-axis tracker technology at the same location and months of the year. The experimental tilt angles obtained range from 5.1°-28.2° with an average angle of 14.8° while the mathematical model approach obtained the tilt angle to be within the range of 9.1°-22.3° with a mean value of 15.5°. The generated power analysis revealed that the peak power produced by the solar panel was recorded at an angle of 30° due South and the mean power gain from the orientation of the PV panel ranged from 3.6-48.1W. The mean power result suggests that, in comparison to a horizontal position, solar collecting efficiency is higher at the optimal tilt angle.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"10 49","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unveiling Sub-60 mV/decade Subthreshold Swing in The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes by TCAD Simulations 通过 TCAD 仿真揭示氧化物局部稀化 (OLT) 门控 MIS 隧道二极管中低于 60 mV/decade 的次阈值波动
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11305.0009ecst
Sung-Wei Huang, Jun-Yu Lin, J. Hwu
{"title":"Unveiling Sub-60 mV/decade Subthreshold Swing in The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes by TCAD Simulations","authors":"Sung-Wei Huang, Jun-Yu Lin, J. Hwu","doi":"10.1149/11305.0009ecst","DOIUrl":"https://doi.org/10.1149/11305.0009ecst","url":null,"abstract":"In this study, we unveil the sub-60 mV/decade subthreshold swing (SS) characteristics observed in the oxide local thinning (OLT) gated p-type metal-insulator-semiconductor (MIS) tunnel diodes (TD) utilizing TCAD simulations. Through our simulations, we successfully replicate the sub-60 mV/decade SS behavior and attribute this remarkable characteristic to the rapid increase in electron density near the gate edge. This phenomenon arises from electron injection through the gate OLT region under a negative gate voltage, leading to a significant elevation in electron density near the gate edge. Armed with this insight, we design scaled devices to assess the feasibility of achieving sub-60 mV/decade SS behavior. By modulating the substrate thickness, we effectively simulate devices with SS lower than 60 mV/decade across a current range spanning 8 orders of magnitude.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"41 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A WS2/CNF Nanocomposite for Electrochemical Sensing Applications 用于电化学传感应用的 WS2/CNF 纳米复合材料
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11312.0011ecst
Tara N Barwa, Daniele Alves, Yiran Luo, Eithne Dempsey, C. Breslin
{"title":"A WS2/CNF Nanocomposite for Electrochemical Sensing Applications","authors":"Tara N Barwa, Daniele Alves, Yiran Luo, Eithne Dempsey, C. Breslin","doi":"10.1149/11312.0011ecst","DOIUrl":"https://doi.org/10.1149/11312.0011ecst","url":null,"abstract":"It is well recognized that antimicrobials are central to society, but they have also entered the aquatic environment posing risks to public health and our essential ecosystems. Therefore, the detection of antimicrobial drugs at low concentration levels in aquatic environments is essential. In this study, a new composite comprising tannic acid modified carbon nanofibers (CNFs) and WS2 was formed to give CNF/WS2 and used in the electrochemical detection of ornidazole, an antimicrobial drug. Ornidazole is a well-known nitroimidazole and it has been detected in various water bodies. Using the CNF/WS2 composite, a linear concentration range extending from 10 nM to 260 mM ornidazole, with a sensitivity of 1.37 mA mM–1 cm–2 was obtained. Very good selectivity was achieved, and the sensor performed well in the analysis of ornidazole in river water, with recoveries ranging from 88.3 to 107.3%.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"11 47","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Porous Dielectric Structure and Response Speed of Moisture Sensors 多孔介电结构与湿度传感器的响应速度
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11302.0003ecst
Ronak Ali, Aaron Swartz, Riasad Badhan, Reza Ilka, Yiju Wang, Jiangbiao He, Zhi Chen, Ning Ren, Z George Zhang, Gefei Wu, Roger England
{"title":"Porous Dielectric Structure and Response Speed of Moisture Sensors","authors":"Ronak Ali, Aaron Swartz, Riasad Badhan, Reza Ilka, Yiju Wang, Jiangbiao He, Zhi Chen, Ning Ren, Z George Zhang, Gefei Wu, Roger England","doi":"10.1149/11302.0003ecst","DOIUrl":"https://doi.org/10.1149/11302.0003ecst","url":null,"abstract":"We made moisture sensors using α-Al2O3 films as porous dielectric materials deposited through the anodic spark deposition (ASD). In this study, a variety number of small pores has been studied to investigate the response speed of moisture sensors. Three different surface morphologies have been studied using scanning electron microscopy (SEM). Sample DM23 has the maximum number of small pores. Small pores are defined as pore size ranging from 40 nm to several hundred nm. Sample TA40 has the minimum number of small pores. Sample FW06 has the medium number of small pores. We found that the sensor made from dielectric material with the maximum number of small pores has the fastest response speed, and that from the minimum number of small pores has the slowest response speed either from high humidity to low humidity or from low humidity to high humidity.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"22 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Near-Field Optics and Its Applications in Nanoscale Materials: A Review (特邀）近场光学及其在纳米材料中的应用：综述
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11303.0015ecst
Giovanni Fanchini, Noah B. Stocek, Victor Wong
{"title":"(Invited) Near-Field Optics and Its Applications in Nanoscale Materials: A Review","authors":"Giovanni Fanchini, Noah B. Stocek, Victor Wong","doi":"10.1149/11303.0015ecst","DOIUrl":"https://doi.org/10.1149/11303.0015ecst","url":null,"abstract":"In this paper, we first offer an overview of aperture-type scanning near field optical microscopy –a family of super-resolution imaging techniques based on evanescent waves, which can be combined with atomic force microscopy and are capable of subwavelength resolution nano-optical imaging. In the second part of this review, we will discuss a few applications in which our group capitalized on the super-resolution resolving power of SNOM to design specific nano-optical and nano-photonic systems for light harvesting, resistive memory device applications and nanoscale thermo-optical management. Specific case studies that will be presented include the characterization of weakly photoluminescent and curved carbon dots for memory device applications, the three-dimensional characterization of plasmon-enhanced nanophotonic devices, as well as the development of near-field thermoreflectance imaging for nanophotonic-based thermal management applications. Collectively, our study well represents the versability of SNOM as a unique super-resolution nanophotonic tool for the investigation of light-matter interaction at the nanoscale.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"53 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers 工作温度高达 225°C 的 NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 异质结侧整流器
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11307.0003ecst
Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah Masten, James Spencer Lundh, Joseph Spencer, Fikadu Alema, Andrei Osinsky, A. Jacobs, Karl D. Hobart, Marko Tadjer, S. J. Pearton
{"title":"Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers","authors":"Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah Masten, James Spencer Lundh, Joseph Spencer, Fikadu Alema, Andrei Osinsky, A. Jacobs, Karl D. Hobart, Marko Tadjer, S. J. Pearton","doi":"10.1149/11307.0003ecst","DOIUrl":"https://doi.org/10.1149/11307.0003ecst","url":null,"abstract":"The characteristics of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by Metal Organic Chemical Vapor Deposition were measured over the temperature range from 25-225°C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω•cm2 at 25°C to 30 Ω.cm2 at 225°C. The forward turn-on voltage was reduced from 4 V at 25°C to 1.9 V at 225°C. The reverse breakdown voltage at room temperature was ~4.2 kV, with a temperature coefficient of -16.5 V/K. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27-0.49 MW.cm-2. The maximum on/off ratios improved with temperature from 2105 at 25°C to 3107 at 225°C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"3 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Temperature and FORC Investigations of Semiconducting/Ferromagnetic Nanocomposites 半导体/超导纳米复合材料的高温和 FORC 研究
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11304.0003ecst
P. Granitzer, K. Rumpf, R. Gonzalez-Rodriguez, J. Coffer, Manfred Nachtnebel
{"title":"High Temperature and FORC Investigations of Semiconducting/Ferromagnetic Nanocomposites","authors":"P. Granitzer, K. Rumpf, R. Gonzalez-Rodriguez, J. Coffer, Manfred Nachtnebel","doi":"10.1149/11304.0003ecst","DOIUrl":"https://doi.org/10.1149/11304.0003ecst","url":null,"abstract":"In the frame of this work the temperature-dependency of the magnetization of various composite systems consisting of porous silicon (PSi) and silicon nanotubes (SiNTs) with embedded Ni, NiCo, FePt, and Fe3O4 structures is discussed. The temperature is varied between 80 and 1273 K which allows to determine the Curie Temperature of the composites which is higher than for the corresponding bulk materials. Magnetic cross-talk between metal deposits can be controlled by the morphology of the porous silicon (pore diameter and distance between the pores) or silicon nanotubes (inner diameter and wall thickness) and also by the distribution and size of the deposits within the pores. To get a clear knowledge about the magnetic interactions single hysteresis curves are not sufficient and thus first order reversal curves (FORC) are performed. Magnetic coupling is present for Ni, Co and NiCo deposits, whereas in the case of Fe3O4 and FePt nanoparticle loading no magnetic cross-talk between the particles is observed.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"74 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors (特邀）氧化剂气体在 HfxZr1-XO2 薄膜原子层沉积过程中对金属-铁电-金属电容器铁电性的影响
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11302.0051ecst
Takashi Onaya, Koji Kita
{"title":"(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors","authors":"Takashi Onaya, Koji Kita","doi":"10.1149/11302.0051ecst","DOIUrl":"https://doi.org/10.1149/11302.0051ecst","url":null,"abstract":"We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. Thus, the MFM capacitor with the PE-ALD film showed less degradation of switching polarization during field cycling compared with the TH-ALD case, because an O-rich-IL should prevent the interface reaction and formation of additional oxygen vacancies in the PE-ALD film during field cycling. Based on these results, it is important to consider the selection of an ALD oxidant gas for the fabrication of HZO-based MFM capacitors.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"57 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selectivity Study of Anodic Seawater Electrolysis Catalysts Using the Rotating Ring-Disc Electrode Method 使用旋转环盘电极法研究阳极海水电解催化剂的选择性
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11309.0003ecst
Oliver Horner, Elod Lajos Gyenge, David P. Wilkinson
{"title":"Selectivity Study of Anodic Seawater Electrolysis Catalysts Using the Rotating Ring-Disc Electrode Method","authors":"Oliver Horner, Elod Lajos Gyenge, David P. Wilkinson","doi":"10.1149/11309.0003ecst","DOIUrl":"https://doi.org/10.1149/11309.0003ecst","url":null,"abstract":"Seawater Electrolysis is an exciting alternative to freshwater electrolysis; however, it suffers from a multitude of issues that must be resolved before the technology can be scaled. Corrosive hypochlorite forms at the anode of seawater electrolysis and can damage catalysts and electrolyzer components. Hypochlorite is unstable and can decay, particularly when exposed to heat and metal ions, which can lead to erroneously high oxygen evolution reaction (OER) selectivity conclusions, resulting in poor catalyst and electrolyzer component selection. In this study, we use the rotating ring-disc electrode technique to characterize the selectivity of IrO2, NiO, Co3O4, RuO2, Pt and PtRu electrocatalysts in situ at near-neutral pH (8.4) with linear scan voltammetry (LSV), potentiostatic and galvanostatic experiments. Our findings reveal that elevated temperatures are conducive to higher OER selectivity. Furthermore, when we increased the chloride concentration in the electrolyte with an IrO2 catalyst, we observed that although the overall selectivity towards the OER reaction decreased, the OER current independently increased, indicating a synergistic relationship.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"1 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Bulk Traps in Layered 2D Gate Dielectrics (特邀）层状二维栅极电介质中的块状陷阱
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11302.0025ecst
Jaemin Shin, Tyafur Pathan, Guanyu Zhou, Christopher L. Hinkle
{"title":"(Invited) Bulk Traps in Layered 2D Gate Dielectrics","authors":"Jaemin Shin, Tyafur Pathan, Guanyu Zhou, Christopher L. Hinkle","doi":"10.1149/11302.0025ecst","DOIUrl":"https://doi.org/10.1149/11302.0025ecst","url":null,"abstract":"In this work, we synthesize new 2D layered dielectrics and fabricate metal-insulator-metal (MIM) capacitors to determine their viability for scaled gate dielectrics (ZrNCl, HfNCl, BiOCl, and Mg(OH)2) in transition metal dichalcogenide-based transistors. While successful synthesis and fabrication was demonstrated, the properties of the dielectrics were decidedly underwhelming for device applications. The dielectric constants, in most cases, were only marginally better than SiO2 (k = 4-6), the leakage currents were too high due to poor band offsets, and most importantly, the bulk trap density, as seen previously in III-V devices, was very high. Overall, there still is no viable 2D gate dielectric for scaled field effect transistors.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"5 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信