Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel
{"title":"通过直接晶圆键合实现高清洁度和高疏水/亲水性对比","authors":"Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel","doi":"10.1149/11203.0181ecst","DOIUrl":null,"url":null,"abstract":"We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Cleanliness and High Hydrophobic/Hydrophilic Contrast Done by Direct Wafer Bonding for Die-to-Wafer Self-Assembly\",\"authors\":\"Pierre Montméat, Thierry Enot, Alice Bond, Adele Thiolon, Emilie Bourjot, Frank Fournel\",\"doi\":\"10.1149/11203.0181ecst\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.\",\"PeriodicalId\":11473,\"journal\":{\"name\":\"ECS Transactions\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Transactions\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/11203.0181ecst\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Transactions","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/11203.0181ecst","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Cleanliness and High Hydrophobic/Hydrophilic Contrast Done by Direct Wafer Bonding for Die-to-Wafer Self-Assembly
We propose an innovative process with a high hydrophilic contrast for die-to-wafer self-assembly bonding. Dies and target wafer bonding surfaces first undergo a photolithography process to define bonding sites with a 15 µm step. An efficient cleaning is then performed for direct bonding surface preparation. A carrier is bonded to the bonding site to temporarily protect it during the hydrophobic treatment. After it, water contact angles of 18° and 110° are measured on bonding sites and on hydrophobic area, respectively. Finally, the self-assembly process compatibility is demonstrated with 8x8 mm² dies achieving alignment accuracy of less than 1 µm and excellent bonding interface quality.