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Durability Investigation of Low Pt-Loaded PEM Fuel Cells with Different Catalyst Layer Morphologies 具有不同催化剂层形态的低铂负载 PEM 燃料电池的耐久性研究
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11311.0003ecst
A. Saeidfar, S. Yeşilyurt
{"title":"Durability Investigation of Low Pt-Loaded PEM Fuel Cells with Different Catalyst Layer Morphologies","authors":"A. Saeidfar, S. Yeşilyurt","doi":"10.1149/11311.0003ecst","DOIUrl":"https://doi.org/10.1149/11311.0003ecst","url":null,"abstract":"This study investigates the durability of proton exchange membrane fuel cells against the Pt-dissolution degradation mechanism using a triangular accelerated stress test (AST) within the voltage range of 0.6-1 V. The electrochemical active surface area and polarization curves are reported throughout the AST for three different catalyst layers (CL), all featuring 0.1 mg/cm2 Pt loading but with different morphologies, which include the Pt/C weight percentages, dilution ratio, and thickness. In addition, a numerical model is employed to simulate the electrochemical performance of these samples at the beginning and end of life, considering the variations in the oxygen transport resistances and catalyst structure.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"2 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140961986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gallium Nitride Electrodeposition at Indium Tin Oxide and Fluorine Tin Oxide Electrodes in Ammonium Nitrate and Gallium Nitrate Aqueous Solution 氮化镓在硝酸铵和硝酸镓水溶液中的氧化铟锡和氧化氟锡电极上的电沉积
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11307.0037ecst
Mauricio A. Leyva Aranzabal, Carlos R. Cabrera
{"title":"Gallium Nitride Electrodeposition at Indium Tin Oxide and Fluorine Tin Oxide Electrodes in Ammonium Nitrate and Gallium Nitrate Aqueous Solution","authors":"Mauricio A. Leyva Aranzabal, Carlos R. Cabrera","doi":"10.1149/11307.0037ecst","DOIUrl":"https://doi.org/10.1149/11307.0037ecst","url":null,"abstract":"Gallium nitride thin films in semiconductor technology have garnered interest. This study aims to develop an effective GaN electrodeposition technique applicable where needed. To determine the optimal conditions, cyclic voltammetry (CV) was done on a boron-doped diamond electrode at 0.01 mV/s potential scan rate and at 0.8 V vs. Ag/AgCl (Saturated KCl) constant applied potential. In the CV study, a well-defined peak formed at -1.75 V vs. Ag/Ag/Cl (Saturated KCl). To start examining thin film features on Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) electrodes, chronoamperometry (CA) measurements were done at time scales ranging from 3600s to 14,000s and at a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). The characterization methods used to examine the samples included SEM and EDS. The optimal weight electrodeposition percentages of Ga and N on ITO were 10.3% and 27.2% and 47.3% and 12.7% on FTO respectively.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"66 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micropatterning MXene/TiO2 Nanocomposite Ink for Gas Sensing 用于气体传感的微图案化 MXene/TiO2 纳米复合油墨
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11312.0003ecst
Jinhong Liu, Chen Chen, 胜辉 夏, Kyle Leatt, Ajit Khosla, Thomas Thundat
{"title":"Micropatterning MXene/TiO2 Nanocomposite Ink for Gas Sensing","authors":"Jinhong Liu, Chen Chen, 胜辉 夏, Kyle Leatt, Ajit Khosla, Thomas Thundat","doi":"10.1149/11312.0003ecst","DOIUrl":"https://doi.org/10.1149/11312.0003ecst","url":null,"abstract":"This work describes the preparation, characterization, and micropatterning of MXene(Ti3C2)/TiO2 nanocomposite inks. MXene nanopowder was oxidized to form MXene/TiO2 nanocomposite powder using an air-aging method. The MXene/TiO2 inks were prepared using deionized water (H2O) as the solvent/dispersant and polyvinylpyrrolidone (PVP) as the surfactant. Various techniques were utilized to characterize the MXene/TiO2 nanocomposite material, and the BET results showed the preferential adsorption of butane of the MXene/TiO2 coating. Utilizing an ultrasonic dispersion printer in conjunction with a stencil mask, the MXene/TiO2 nanocomposite ink was successfully printed onto a 10mm*10mm gold-plated silicon substrate. This process achieved millimeter-level precision control, enabling the printing of fine lines with a width of 1μm and a spacing of 0.05mm. Furthermore, this technique demonstrated the ability to render various complex patterns, thus exemplifying the potential of MXene/TiO2 nanocomposite ink in the field of micro- and nano-manufacturing.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"29 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hard Magnetic FePt Nanoparticles within Nanostructured Silicon to Improve the Maximum Energy Product 纳米结构硅中的硬磁性铁铂纳米颗粒可提高最大能量产出
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11304.0011ecst
K. Rumpf, P. Granitzer, R. Gonzalez-Rodriguez, J. Coffer
{"title":"Hard Magnetic FePt Nanoparticles within Nanostructured Silicon to Improve the Maximum Energy Product","authors":"K. Rumpf, P. Granitzer, R. Gonzalez-Rodriguez, J. Coffer","doi":"10.1149/11304.0011ecst","DOIUrl":"https://doi.org/10.1149/11304.0011ecst","url":null,"abstract":"In this work nanostructured silicon, silicon nanotubes (SiNTs) and porous silicon (PSi), with embedded hard magnetic FePt nanoparticles (NPs) is used as platform to create hard magnetic nanomagnet-arrays. The magnetic response of FePt-loaded composite materials is investigated, which have potential in high-performance magnets and as rare earth magnet alternatives. PSi/FePt demonstrates superior hard magnetic behavior with a higher coercivity and remanence compared to SiNTs/FePt. Varying the Fe:Pt molar ratio in deposits results in a small coercivity (HC) change. FePt-loaded samples consistently show increased coercivity and remanence compared to Co-loaded samples, with PSi exhibiting a stronger effect compared to SiNTs. Comparing FePt-loaded samples with Co-NP-loaded samples, in both template types an increase of the coercivity is observed for FePt. Also in the case of Co-loading the utilization of PSi offers higher coercivities compared to SiNTs. From the investigated composite systems the ones consisting of PSi and FePt offer the highest energy product.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"16 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancements in Glucose Monitoring: A Thin Film ZnO-Nanoflakes Based Highly Sensitive Wearable Biosensor for Noninvasive Sweat-Based Point-of-Care Monitoring for Diabetes 葡萄糖监测的进展：基于 ZnO-Nanoflakes 薄膜的高灵敏度可穿戴生物传感器，用于基于汗液的无创糖尿病护理点监测
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11313.0035ecst
G M Mehedi Hossain, A. Jalal, Nezih Pala, Fahmida Alam
{"title":"Advancements in Glucose Monitoring: A Thin Film ZnO-Nanoflakes Based Highly Sensitive Wearable Biosensor for Noninvasive Sweat-Based Point-of-Care Monitoring for Diabetes","authors":"G M Mehedi Hossain, A. Jalal, Nezih Pala, Fahmida Alam","doi":"10.1149/11313.0035ecst","DOIUrl":"https://doi.org/10.1149/11313.0035ecst","url":null,"abstract":"In the contemporary global landscape, diabetes is a concerning presence that contributes to noteworthy mortality rates. The etiology of this condition involves a subtle interaction between insulin deficiency and elevated blood sugar levels. Against this backdrop, the necessity for prompt, accurate, and continuous noninvasive monitoring of glucose concentrations becomes notably evident. The electrochemical flexible glucose biosensor was fabricated by immobilizing glucose oxidase (GOx) on ZnO nanoflakes, possessing a 20nm thickness, and synthesized on an Au-coated stretchable PET film. The sensitivity of the flexible biosensor was determined by 29.97μA/decade/cm², and the minimum detection limit was 1μM. The coefficient of determination was 97.76%, which is significantly linear.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"3 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) III-Nitride Ultraviolet LEDs and Lasers for Applications in Biology and Medicine (特邀）用于生物和医学应用的 III 氮化物紫外发光二极管和激光器
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11308.0003ecst
Jing Zhang, Bryan Melanson, M. Seitz, Jacob Boisvere
{"title":"(Invited) III-Nitride Ultraviolet LEDs and Lasers for Applications in Biology and Medicine","authors":"Jing Zhang, Bryan Melanson, M. Seitz, Jacob Boisvere","doi":"10.1149/11308.0003ecst","DOIUrl":"https://doi.org/10.1149/11308.0003ecst","url":null,"abstract":"Solid-state ultraviolet (UV) light emitters are being developed for emerging biomedical applications such as surface sterilization, air/water purification, and medical treatments as a replacement for mercury vapor lamps. While these UV emitters offer many advantages over mercury lamps, such as more compact form factors, tunable emission wavelengths, and greatly increased lifetimes, they also suffer from a number of issues which hinder their implementation in many potential applications. UV emitters are based on AlGaN heterostructures which usually have very poor external quantum efficiencies (EQEs) of less than 10%, with EQEs decreasing with emission wavelength. This makes it very challenging to realize high efficiency UV emitters whose high energy photons are capable of inactivating viruses, bacteria, and other pathogens. This work discusses recent developments made by the Zhang Research Group at the Rochester Institute of Technology in improving the efficiencies of UV LEDs and lasers.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"12 32","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ X-ray Fluorescence Analysis of In-plane Cerium-ion Distribution Under Humidity Gradients in Proton Exchange Membrane 质子交换膜湿度梯度下面内铈离子分布的原位 X 射线荧光分析
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11311.0011ecst
Kaoruko Morita, Aika Takezawa, Naoki Kitano, Akira Kuwaki, Akihiko Kato, Satoshi Yamaguchi, Kazuma Shinozaki, Yuki Orikasa
{"title":"In-situ X-ray Fluorescence Analysis of In-plane Cerium-ion Distribution Under Humidity Gradients in Proton Exchange Membrane","authors":"Kaoruko Morita, Aika Takezawa, Naoki Kitano, Akira Kuwaki, Akihiko Kato, Satoshi Yamaguchi, Kazuma Shinozaki, Yuki Orikasa","doi":"10.1149/11311.0011ecst","DOIUrl":"https://doi.org/10.1149/11311.0011ecst","url":null,"abstract":"Cerium ions are incorporated into proton exchange membranes (PEMs) of fuel cells to mitigate its chemical degradation caused by radical species. However, under fuel cell operating conditions, cerium ions move in in-plane direction in the cell by humidity gradient. This cerium ion transport results in cerium ion depletion leading to accelerated chemical degradation. This study developed an in-situ and operando measurement technique utilizing synchrotron high-energy X-ray fluorescence spectroscopy to monitor the cerium ion transport across the membrane under the in-plane humidity gradient. This method effectively tracks the dynamic behavior of cerium ions under fuel cell operating conditions.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"1 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Invited) Luminescent InP Quantum Dots: They're Not Just Like CdSe (发光 InP 量子点：它们与 CdSe 并不相同
ECS Transactions Pub Date : 2024-05-17 DOI: 10.1149/11303.0003ecst
Paul Cavanaugh, Haochen Sun, Ilan Jen-La Plante, Xudong Wang, Maria Bautista, Christian Ippen, A. Kelley, David Kelley
{"title":"(Invited) Luminescent InP Quantum Dots: They're Not Just Like CdSe","authors":"Paul Cavanaugh, Haochen Sun, Ilan Jen-La Plante, Xudong Wang, Maria Bautista, Christian Ippen, A. Kelley, David Kelley","doi":"10.1149/11303.0003ecst","DOIUrl":"https://doi.org/10.1149/11303.0003ecst","url":null,"abstract":"There are significant similarities and differences in the spectroscopy and photophysics between CdSe-based and InP-based quantum dots. One of the more important differences is the presence of reversibly populated hole traps in InP/ZnSe quantum dots (QDs). These traps affect many aspects of the overall excited state dynamics. In this paper we elucidate the hole relaxation dynamics in high quality InP/ZnSe/ZnS QDs at room temperature and focus on the role of these traps. Specifically, we show that the presence of transiently populated traps results in extremely slow (tens of picoseconds to nanoseconds) hole cooling as evidenced by a significant fraction of the photoluminescence exhibiting a slow risetime following photoexcitation. Through a combination of chemical derivatization studies and density functional theory calculations, they are assigned to substitutional indium adjacent to a zinc vacancy, In3+/VZn\u0000 2-, in the ZnSe shell.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"38 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Eliminating the Bias from Liquid-Junction Potential for Charge-Transfer Analysis 消除电荷转移分析中液结电位的偏差
ECS Transactions Pub Date : 2024-05-16 DOI: 10.1149/11306.0003ecst
Valentine I. Vullev and Jaime O. O`Mari
{"title":"Eliminating the Bias from Liquid-Junction Potential for Charge-Transfer Analysis","authors":"Valentine I. Vullev and Jaime O. O`Mari","doi":"10.1149/11306.0003ecst","DOIUrl":"https://doi.org/10.1149/11306.0003ecst","url":null,"abstract":"Liquid junctions in electrochemical cells introduce potentials that can strongly affect measurements. Such liquid-junction potential errors can exceed 100 mV. In the analysis of charge-transfer thermodynamics, error differences of 100 mV can have substantial impact on the interpretations. Discussion herein outlines an approach for eliminating the effects of liquid-junction potentials from charge-transfer analysis.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Integration Scheme to Prevent Chemical Attack on Floating Polysilicon Gate of Non-Volatile Memory 防止化学物质侵蚀非易失性存储器浮动多晶硅栅极的新型集成方案
ECS Transactions Pub Date : 2024-05-16 DOI: 10.1149/11305.0003ecst
Yuming Yang, KIM Foong Kong, Young Way Teh, Guanyu Zhou, Nianhong Yu and Kankan Yu
{"title":"A New Integration Scheme to Prevent Chemical Attack on Floating Polysilicon Gate of Non-Volatile Memory","authors":"Yuming Yang, KIM Foong Kong, Young Way Teh, Guanyu Zhou, Nianhong Yu and Kankan Yu","doi":"10.1149/11305.0003ecst","DOIUrl":"https://doi.org/10.1149/11305.0003ecst","url":null,"abstract":"Abstract—Silicon pitting has been observed on floating gate polysilicon layer of embedded non-volatile memory(e-NVM) process due to chemical attack caused by HBr residual interacting with moisture. This paper successfully demonstrates a new integration scheme for a robust floating gate process against silicon attack for embedded stacked/split gate non-volatile memory process. Firstly, CF4 was introduced into floating gate polysilicon etch recipe to replace HBr, which has been CMOS gate polysilicon etch gas in traditional logic process due to the advantage of higher selectivity despite the disadvantage of low vaporability, for better or cleaner process control. Secondly, an additional plasma removal stripping (PRS) clean step was added before chemical removal stripping (CRS) to give better etch by-product cleaning, even though there is no photoresist and lithography involved on the poly blanket etch for the better etch by-product cleaning. This new scheme has been verified using inline optical inspection defect-scan to prove the sufficient process margin for better mass production control that came from improved manufacturing Queue-time margin (longer waiting time) between dry-etch step, CRS step, and subsequent downstream process steps.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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