2006 19th International Vacuum Nanoelectronics Conference最新文献

{"title":"Comments on the JWKB Approximation","authors":"R. Forbes","doi":"10.1109/IVNC.2006.335309","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335309","url":null,"abstract":"The JWKB approximation involved in standard Fowler-Nordheim theory approximates a \"quasi-classical potential energy\" describing a tunneling probability for an electron approaching a tunneling barrier. Some comments regarding the adequacy of this approximation method are made and the principle of restoring a \"pre-factor\" into the tunneling probability approximation is argued. JWKB approximation is shown to be applicable in normal circumstances of cold field electron emission","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"87 23","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113940643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New Method of Ccarbon Nanofibers Synthesis for Field Emission Applications","authors":"V. Bormashov, E. Sheshin, A. G. Tkachev, V. Negrov","doi":"10.1109/IVNC.2006.335475","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335475","url":null,"abstract":"A new method for carbon nanomaterials production based on the catalytic pyrolysis of butane-propane mixture was proposed. The filament carbon nanofibres all had curved shapes and typically had diameters from 8 to 80 nm, and lengths of up to 1 mum. A field emission cathode based on the synthesized carbon nanofibres was produced by screen printing. Field emission curves and Fowler-Nordheim curves were extracted by a diode-type tester. Results show that the cold cathodes exhibited low turn-on fields, and high uniformity and emission stability","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":" 129","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113952627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon Nanosheet Cathodes for Use in Milliamp Class Field Emission Devices","authors":"Jianjun Wang, Sigen Wang, P. Miraldo, K. Hou, R. Outlaw, M. Zhu, Xin Zhao, B. Holloway, T. Tyler, O. Shenderova, M. Ray, J. Dalton, G. Mcguire","doi":"10.1109/IVNC.2006.335238","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335238","url":null,"abstract":"Summary form only given. Field emission sources have distinct advantages such as short turn-on time, high power efficiency, low thermal signature, modulation control and the ability to be a variable current source that are desirable for high-current applications. However, scale-up of current density, device lifetime and device robustness has been limited to date. In this talk we present recent results using carbon nanosheets (CNS) as the field emission source in a high-current, back-gated device. Carbon nanosheets consist of free-standing graphene layers <2 nm thick which are oriented perpendicular to the growth surface. As field emission sources, nanosheets offer several potential benefits as compared to carbon nanotubes or other similar nanostructures. Nanosheets do not require a catalyst for growth and can be patterned after deposition using standard photolithography techniques. This is a distinct advantage compared to the cumbersome process of nanotube placement via catalyst patterning or the inefficient use of printed pastes which do not allow for vertically oriented structures. Second, nanosheets have as low, or lower, turn on field compared to nanotubes; threshold fields <1.0 V/mum (10 nA threshold) have been achieved. Third, in contrast to nanotube results previously published in the literature, nanosheets tend to self-condition to lower turn-on thresholds and increased stability after high-current field emission operation; nanosheet samples have produced over 23 mA of unsealed DC current, have operated in a continuous DC mode for over 5 hours, without failure, and produced over 1 mA of current in a pulsed mode (14% duty cycle >100 microamps, 3% at max current; 100 sec/cycle) 200 hours, again without failure. Furthermore, the sweep-to-sweep repeatability was remarkably high over the entire 200 hours and the standard deviation of the maximum current was <2.3% for all 7216 pulses. A novel back-gated device for high-current applications has been developed with nanosheets as the emission source. The device inherently eliminates arcing between the gate and the cathode and creates a much more open cathode configuration for better vacuum conductance and getter pumping. Furthermore, exact positioning of the CNS is not necessary and the device inherently allows for emission site burn out and turn-on of secondary sites. Electrostatic and electron trajectory modeling indicate that the devices should be capable of operation at current densities of >10 mA/mm2 and internal modulation to GHz frequencies. Testing of prototype devices has produced upto 3.5 mA of current and lifetimes of over 20 hours. The primary device failure mode is dielectric breakdown due to Au diffusion. New Pt-based devices are under construction; testing results from these devices will also be presented","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127702836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The study of One-dimensional Zinc Oxide Nanostructure Emitters","authors":"Jie Chen, W. Lei, Xiaobing Zhang, Y. Di, K. Chu, Hui Mu","doi":"10.1109/IVNC.2006.335209","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335209","url":null,"abstract":"Field emission display (FED) is a kind of vacuum electron device, and its principle is very similar to that of a traditional cathode ray tube (CRT). The display performances of a FED, such as emission current and the driving voltage, are determinated largely by the field emitters. Besides the emission characteristic, the geometric factors, thermal stability and ambient insensitivity of the field emitter are also very important in a FED device. One dimensional nano zinc oxide materials have the properties of high aspect ratio, good mechanical performance and chemical stability. In this paper, the emission stability of nano ZnO emitters which has the tetrapod-like nanostructure, is studied. The ZnO cold cathode is fabricated with the screen printing method, and the emission characteristics are investigated in a vacuum microelectronic device using ITO anode. The emission stability recorded over time of the ZnO cathode is presented","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122278981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Emission Mechanism of Doped CVD Diamond Characterised by Combined XPS/UPS/FES System","authors":"H. Yamaguchi, I. Saito, Y. Kudo, T. Masuzawa, M. Takahashi, T. Yamada, M. Kudo, Y. Takakuwa, K. Okano","doi":"10.1109/IVNC.2006.335318","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335318","url":null,"abstract":"In this study, combined X-ray photoelectron spectroscopy (XPS)/ultraviolet photoelectron spectroscopy (UPS)/field emission spectroscopy (FES) system was used to characterize the electron emission mechanism of doped CVD diamond. The energy band diagram of emitting diamond is drawn using the electron energy distribution obtained from the system","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127966682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Interaction of Platinum with W[111] Tip: Diffusion, Desorption and Changes of Tip Morphology","authors":"R. Bryl, R. Błaszczyszyn","doi":"10.1109/IVNC.2006.335256","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335256","url":null,"abstract":"Summary form only given. Adsorption, diffusion and desorption of platinum on W[111] oriented tip has been studied using field electron microscopy technique. The diffusion of platinum in submonolayer range on clean W tip was studied at temperatures 630-750 K. Mean activation energy for diffusion was established for Ediff=112plusmn7 kJ/mol. The layer equilibrated in diffusion process was stable at temperatures up to 1150-1200 K where some changes of tip morphology, likely due to alloying of Pt with W, started to be visible. Submonolayer of platinum started to desorb from the tip at temperatures as high as 1850-1900 K. The measurements of activation energy for desorption of Pt from W were carried out at temperatures 2050-2150 K and yield the value of Edes=425plusmn40 kJ/mol","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132426759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Measurement of Anomalous High-Frequency Oscillations during Field Emission and Their Possible Significance in Pulsed Field Emission","authors":"M. Hagmann, D. Christensen, M. Mousa, A. Baturin, E. Sheshin","doi":"10.1109/IVNC.2006.335321","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335321","url":null,"abstract":"Trains of evenly spaced 20 ns wide (width at half-height) current pulses with a repetition rate of 200 MHz were measured from a tungsten tip in vacuum when a DC high-voltage supply, a 100 MOmega ballast resistor, a 50 Omega load resistor, and an analog microammeter were connected in series with a field emission tube. These current pulses have peak values as large as 320 mA, whereas the tungsten tip in the tube is rated for a continuous DC field emission current of only 10 microamperes. We assume that the current density is approximately 109 A/m2 at the rated current, and this would suggest that the peak current density would be approximately 3 times 1013 A/m2 in the pulses. As the applied DC voltage is increased the pulse repetition rate increases, but the peak current for each pulse remains nearly constant. Several oscilloscopes and spectrum analyzers were connected across the load resistor in order to characterize these oscillations. The current pulses are caused by relaxation oscillations due to the charging and discharging of the capacitance between two wire pins on the header of the field emission tube. There is no connection to the anode so the anode floats in potential and becomes negatively charged as it receives the electrons that are emitted by the nearby tip. This reduces the potential difference between the tip and the anode, which decreases the field emission current. Thus, the potential difference across the capacitance between the anode pin and the adjacent connected pin increases until breakdown occurs on the outside surface of the header, to cause a sudden increase in the potential difference between the tip and the anode, which causes the observed current burst. The correction for displacement current is essential in all measurements of pulsed field emission","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130115695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"XPS and LEED Analyses on Zirconium Oxide Modified (100) Surface of Molybdenum","authors":"T. Kawakubo, H. Nakane, H. Adachi","doi":"10.1109/IVNC.2006.335229","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335229","url":null,"abstract":"It has been found that the work function of Mo(100) surface is able to reduce to 2.1 eV by heating it with a slight layer of zirconium oxide in a vacuum condition. Here the low work function surface, which is abbreviated to ZrO/Mo(100), was examined aiming to understand the reducing mechanism of the work function. Low-energy electron diffraction (LEED) is employed to analyze atomic arrangement at the surface, and X-ray photoelectron spectroscopy (XPS) to identify the surface chemical condition. The experiment gives almost the same results as for the ZrO/W(100) low work function surface","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130468360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-Ray Energy Detection Using Silicon Field Emission Imaging Array","authors":"M. Wong, C. Hunt, Y. Diawara","doi":"10.1109/IVNC.2006.335412","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335412","url":null,"abstract":"In this paper, silicon field-emission imaging array tips were used for X-ray energy detection. The incident X-ray photon, depending on its photon energy and the material of the detector, will generate a specific number of electron/hole pairs (EHPs) and penetrate an energy-dependant distance into the substrate. The collected electron current generates a distinct pulse width and height, which correlates to the specific energy of the incident photon. The amplified pulses, unlike ordinary energy detectors, are spatially specific to the photon impact; therefore, this method produces both an imager and an energy detector. This capability is unavailable in any other X-ray imaging method and therefore, is valuable in X-ray diffractometric applications","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"46 Suppl 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131474653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Post Treatment of Screen-Printed Carbon Nanotubes Emitter by Plasma Etching","authors":"Jun Yu, Jun Chen, S. Deng, N. Xu","doi":"10.1109/IVNC.2006.335220","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335220","url":null,"abstract":"The effect of post-deposition plasma etching on the field emission properties of screen-printed multiwalled carbon nanotube electron emitter arrays is investigated. Results prove that short time etching can effectively remove parts of the inorganic binder, aligns the carbon nanotubes and improve field emission properties","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}