2006 19th International Vacuum Nanoelectronics Conference最新文献

{"title":"Simulation Study of Beam Temperature Effects of Carbon Nanotubes Field Emission Source","authors":"Y. Lan, Yu-Hsiang Hsu","doi":"10.1109/IVNC.2006.335446","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335446","url":null,"abstract":"Summary form only given. Carbon nanotubes (CNTs) are promising electron sources for field emission displays (FEDs) due to their excellent characteristics. But the temperature effects upon the spreading of the emitting electrons and upon the field emission characteristics have seldom been discussed. In this study, the particle-in-cell finite-difference time-domain (PIC-FDTD) method is used to study the temperature effects of the electron beams. A field emission model based on the Fowler-Nordheim equation using the local electric field at the nanotube top is established. The transverse and longitudinal temperature effects are introduced through adding energy of the emitted electrons with the Botzlmann distribution. For considering the junction effects of the carbon nanotubes grown on doped silicon substrate, the phenomena of the reversed saturated currents are also included in our emission model. Moreover, due to the essence of the PIC-FDTD method, the space-charge effects are considered in the simulation automatically. The simulation geometry is shown in figure 1. The two-dimensional cylindrical coordinate (z-r-thetas) with thetas symmetry is adopted. Figure 2(a) and 2(b) plot the energy distributions of the emitted electrons for the anode voltage of 10000 V, with and without the junction effects, respectively. As shown in Fig. 2, due to the emission current limited by the junction effect, the emitted electrons present the Botzlmann distribution but with less noise. Figure 3 plots the beam radius as a function of the anode voltage for different beam temperatures and without the junction effect. Figure 3 presents that the beam radius increases with the anode voltage. And the beam temperature has more apparent effects on the beam radius on larger anode voltage only. Figure 4 shows the F-N plots for different beam temperatures, with and without the junction effects. As shown in Fig. 4, the beam temperature has little notable effect on the F-N plot. But the emission current is limited by the junction effect much earlier than by the space-charge effect","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123296320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observation of electron wave interference in field emission from two adjacent different points","authors":"K. Murakami, F. Wakaya, M. Takai","doi":"10.1109/IVNC.2006.335322","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335322","url":null,"abstract":"A Pt field emitter with two adjacent emission sites was fabricated by electron-beam induced deposition (EBID). The interference of electron waves in field emission from artificially fabricated two different points was observed for the first time. The observed interference fringes were well reproduced by the Young's interference. These results draw a possibility of the new devices based on the interference of the coherent electrons in vacuum","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125335557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characteristic and Circuit Model of a CNT-FED Subpixel","authors":"Wang Weizhong, Chen Zhangqiang, Yin Han-chun, Zhang Xiaobing, Lei Wei","doi":"10.1109/IVNC.2006.335266","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335266","url":null,"abstract":"A basic triode structure of carbon nanotube field emission display was shown which has three electrode, anode, gate and cathode electrodes. A circuit model for the subpixel of the panel, the capacitance and resistance in the CNT-FED panel is evaluated. From the simulation using pspice, the decrease in the value of the capacitance, would reduce the rising and falling time of the driving voltage","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122137461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Peierls Distortion ou Field Emission of Carbon Nanotubes","authors":"S. Liang, H. Sun, S. Deng, N. Xu","doi":"10.1109/IVNC.2006.335464","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335464","url":null,"abstract":"Using the quantum tunneling theory with the tight-binding approach, we study the effects of Peierls distortion and the magnetic field in the field emission of carbon nanotubes. The Peierls distortion opens an energy gap at Fermi level, which suppresses the emission current. The responses of the emission current to the magnetic field are quite different for the semiconducting and metallic tubes","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129516526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Measurement of Field Emission Property on the Individual Silicon Nanowire by Scanning Tunneling Microscopy","authors":"W. Ming, Jian Chen, J. She, J. Zhou, W. Xie, S. Deng, N. Xu","doi":"10.1109/IVNC.2006.335466","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335466","url":null,"abstract":"Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using scanning tunneling microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was also applicable in micro-scale field emission process through numerical value simulation of the field emission process","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129545958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Field Eemission from an Individual Multiwalled Carbon Nanotube on a Tungsten Tip","authors":"X. Bai, Mingsheng Wang, Jie Yu, Zhaoxiang Zhang, Gengmin Zhang, D. Guo, Zengquan Xue","doi":"10.1109/IVNC.2006.335443","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335443","url":null,"abstract":"A multiwalled carbon nanotube (MWCNT) was assembled onto a tungsten tip in a transmission electron microscope (TEM). Then it was transferred into a field-emission microscope (FEM) for the measurement of field emission properties. Stable field emission current and pattern were established after an aging process, which ridded the MWCNT of adsorption and blunted its end. A reduced brightness of 107-108(A/m2middotsrmiddotV) was eventually obtained","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single Silicon Field Emitter with High Aspect Ratio","authors":"S. Gudkova, M. A. Makhiboroda, V. A. Fedirko, N. A. Djuzhev","doi":"10.1109/IVNC.2006.335449","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335449","url":null,"abstract":"Single silicon field emitter with high aspect ratio is fabricated using deep wet anisotropic etching and step-by-step oxidation. The emission performance of the field emitter is characterised. The C-V characteristic of the emitter together with the Fauler-Nordheim plot are presented","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128985448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Emission Mechanism of Diamond","authors":"K. Okano, H. Yamaguchi, I. Saito, T. Masuzawa, Y. Kudo, T. Yamada, M. Kudo, Y. Takakuwa","doi":"10.1109/IVNC.2006.335394","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335394","url":null,"abstract":"Clarifying the electron emission mechanism of diamond is one of the remaining problems for the realization of diamond cold cathodes for vacuum nano-electronics applications. Diamond is well known to have negative electron affinity (NEA) and an electric field of less than 1 V/mum is required to extract electrons from the surface, whereas much higher field is needed for the conventional metal emitter tips. However, there have been only few reports attempting to clarify the mechanism based on the experimental results. In this study, a combined spectroscopy of XPS/UPS/FES was performed to characterise the electron emission mechanism of diamond. As a result, we have succeeded in drawing the energy band diagram to explain the electron emission from various types of diamond","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"083 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129016714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trace Element Sn Segregation in Cu-rich Precipitates during Thermal Ageing of Pressure Vessel Steels","authors":"G. Sha, A. Morley, A. Cerezo, G.D.W. Smith, D. Ellis, T. Williams","doi":"10.1109/IVNC.2006.335325","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335325","url":null,"abstract":"Two SA533B type steel weld specimens with different Ni concentrations have been investigated during long-term thermal ageing up to 49800 hrs at three temperatures (330degC, 365degC and 405degC). Although Sn as trace element is only present in the steels at a level of about 0.007 at%, it has been observed to segregate to Cu clusters at significant levels (up to 2 at%) in the low Ni steel. In contrast, no clear Sn segregation to Cu-rich clusters was observed in high Ni steel. A combination of TEM (transmission electron microscopy) and 3DAP (three-dimensional atom probe) characterization confirmed that strong segregation of Sn not only occurs to Cu-rich precipitates on dislocations but also to Cu-rich precipitates in the matrix of the low Ni steel. The level of segregation was found to be higher at higher ageing temperatures, but showed no variation with different ageing time","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123539730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Field emission of individual nanotubes studied by in situ transmission electron microscopy","authors":"X. Bai, Zhi Xu, E. Wang","doi":"10.1109/IVNC.2006.335356","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335356","url":null,"abstract":"The field emission of individual multiwalled carbon nanotubes is studied using transmission electron microscope (TEM). A direct link between field emission and emitter structure and real work function at emitter tip is established. The result is modeled according to the Fowler-Nordheim equation","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"140 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120831732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}