Single Silicon Field Emitter with High Aspect Ratio

2006 19th International Vacuum Nanoelectronics Conference Pub Date : 2006-07-01 DOI:10.1109/IVNC.2006.335449

S. Gudkova, M. A. Makhiboroda, V. A. Fedirko, N. A. Djuzhev

引用次数: 0

Abstract

Single silicon field emitter with high aspect ratio is fabricated using deep wet anisotropic etching and step-by-step oxidation. The emission performance of the field emitter is characterised. The C-V characteristic of the emitter together with the Fauler-Nordheim plot are presented

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高纵横比单硅场发射极

采用深湿各向异性刻蚀和分步氧化法制备了高纵横比单硅场发射极。对场发射极的发射性能进行了表征。给出了发射极的C-V特性及Fauler-Nordheim图

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 19th International Vacuum Nanoelectronics Conference

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