碳纳米管场发射源光束温度效应的模拟研究

Y. Lan, Yu-Hsiang Hsu
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摘要

只提供摘要形式。碳纳米管(CNTs)由于其优异的特性,是很有前途的场发射显示器(fed)电子源。但温度对发射电子扩散和场发射特性的影响很少被讨论。本文采用单元内粒子时域有限差分(PIC-FDTD)方法研究了电子束的温度效应。基于Fowler-Nordheim方程,建立了纳米管顶部局域电场的场发射模型。通过增加波兹曼分布的发射电子能量,引入了横向和纵向温度效应。考虑到在掺杂硅衬底上生长的碳纳米管的结效应,我们的发射模型中还考虑了反向饱和电流的现象。此外,由于PIC-FDTD方法的本质,在仿真中自动考虑了空间电荷效应。仿真几何如图1所示。采用具有对称性的二维柱坐标(z-r-theta)。图2(a)和图2(b)分别绘制了阳极电压为10000 V时,有结效应和没有结效应时发射电子的能量分布。如图2所示,由于发射电流受到结效应的限制,发射电子呈现波兹曼分布,但噪声较小。图3绘制了在没有结效应的情况下,不同光束温度下,光束半径随阳极电压的变化曲线。图3显示了光束半径随阳极电压的增加而增加。当阳极电压较大时,光束温度对光束半径的影响更为明显。图4显示了有和没有结效应的不同光束温度下的F-N图。如图4所示,光束温度对F-N曲线的影响不显著。但结效应对发射电流的限制要远远早于空间电荷效应
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation Study of Beam Temperature Effects of Carbon Nanotubes Field Emission Source
Summary form only given. Carbon nanotubes (CNTs) are promising electron sources for field emission displays (FEDs) due to their excellent characteristics. But the temperature effects upon the spreading of the emitting electrons and upon the field emission characteristics have seldom been discussed. In this study, the particle-in-cell finite-difference time-domain (PIC-FDTD) method is used to study the temperature effects of the electron beams. A field emission model based on the Fowler-Nordheim equation using the local electric field at the nanotube top is established. The transverse and longitudinal temperature effects are introduced through adding energy of the emitted electrons with the Botzlmann distribution. For considering the junction effects of the carbon nanotubes grown on doped silicon substrate, the phenomena of the reversed saturated currents are also included in our emission model. Moreover, due to the essence of the PIC-FDTD method, the space-charge effects are considered in the simulation automatically. The simulation geometry is shown in figure 1. The two-dimensional cylindrical coordinate (z-r-thetas) with thetas symmetry is adopted. Figure 2(a) and 2(b) plot the energy distributions of the emitted electrons for the anode voltage of 10000 V, with and without the junction effects, respectively. As shown in Fig. 2, due to the emission current limited by the junction effect, the emitted electrons present the Botzlmann distribution but with less noise. Figure 3 plots the beam radius as a function of the anode voltage for different beam temperatures and without the junction effect. Figure 3 presents that the beam radius increases with the anode voltage. And the beam temperature has more apparent effects on the beam radius on larger anode voltage only. Figure 4 shows the F-N plots for different beam temperatures, with and without the junction effects. As shown in Fig. 4, the beam temperature has little notable effect on the F-N plot. But the emission current is limited by the junction effect much earlier than by the space-charge effect
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