2006 19th International Vacuum Nanoelectronics Conference最新文献

{"title":"Atom probe tomography of GB segregation in nanocrystalline Ni alloy","authors":"L. Qian, M. Chen, M. K. Miller","doi":"10.1109/IVNC.2006.335416","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335416","url":null,"abstract":"In this study, atom probe tomography was employed to investigate atomic-scale element distributions in an electroplated nanocrystalline Ni alloy. Quantitative characterization evidences that weak yet detectable grain boundary segregations of carbon and cobalt occur during low-temperature electroplating. Nanoindentation measurements suggest that the hardness of the alloy is ~1 GPa higher than that of the nanocrystalline pure Ni with the same grain size. Classical solid solution strengthening cannot completely account for the hardness increment and hence the grain boundary segregations appear to play an important role in the strength improvement.","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124132130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atom Probe Tomography Investigation of Nanoscale Ordered Precipitates in an Experimental Steel","authors":"J. Akré, F. Danoix, H. Leitner, W. Lefebvre, F. Vurpillot, P. Auger","doi":"10.1109/IVNC.2006.335386","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335386","url":null,"abstract":"Summary form only given. The precipitation phenomena in a secondary hardening experimental steel alloyed with Ni and Al have been investigated by atom probe tomography (APT). The overall precipitation behavior during tempering has been sequenced as follows: a constant heating rate of 20degC/min was applied to small rods, and they were subsequently quenched from the desired temperature in order to monitor the development of the microstructure, which consists of a fine dispersion of secondary hardening complex carbides (Mo, Cr, V carbides) and intermetallic B2 (CsCl) ordered NiAl particles. The early stages of precipitation of ordered precipitates was investigated by following the behavior of homo- and hetero-atomic Ni, Al pairs by plotting the pair correlation function as derived from the 3D data-sets. For longer aging times, it appears that complex carbides precipitate together with an intermetallic NiAl phase. However, the composition of both phases was found to vary during tempering; specifically, a significant amount of iron is still present in the core of the ordered phase even in the overaged conditions. Additionally, ordering in NiAl intermetallic precipitates was monitored by probing along a superstructure [200] direction. A large displacement shift of the Ni sublattice with respect to the Al-sublattice in the direction perpendicular to the analysis was observed. This effect has been simulated and can be related to trajectory aberrations during the evaporation sequence","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of Tungsten Tip that Emits Electron at Extremely Low Bias Voltage","authors":"F. Rahman, S. Mizuno, H. Tochihara","doi":"10.1109/IVNC.2006.335458","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335458","url":null,"abstract":"A new modification technique of tungsten tip was invented, which results a tip apex capable of emitting at extremely low bias voltages. Freshly prepared tips were characterized by field ion microscopy (FIM) and field emission microscopy (FEM) to resolve the atomic structure of the apex and to monitor the field emission pattern. Thus, it is presumed that the FIM-induced modified O/W tip apex has local negative electron affinity or extremely small work function resulting a nearly zero potential barrier for electrons to emit. These electrons are lead to a narrow pathway at the center of the extractor resulting a narrowest opening angle towards the MCP","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123615905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon Nanocones on (a-C:H)Si Composite Films: Electronic Properties and Thermal Stability","authors":"V. Frolov, E. Zavedeev, S. Pimenov, V. Konov, E. N. Loubnin, G. Kirpilenko","doi":"10.1109/IVNC.2006.335473","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335473","url":null,"abstract":"Thermal stability and variations of the electronic properties of amorphous composite film during nanostructuring and the influence of ambient humidity on carbon nanocone growth were studied under an air-operated scanning probe microscopy device. Deviations of the nanocone shape subjected to heat treatments of up to 700degC for 30 min under vacuum conditions was also investigated. A rapid decrease of electroconductivity, an increase of film work function and electric field-induced amorphous-nanocrystalline phase transitions were observed inside the modified regions","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126790831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode","authors":"H. Tsubouchi, S. Sakuma, Y. Neo, H. Mimura, T. Sakai, M. Ushirozawa, T. Yamamoto","doi":"10.1109/IVNC.2006.335436","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335436","url":null,"abstract":"This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115306181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial Partitioning in Single Crystal Ru-bearing Superalloys","authors":"M. K. Miller, K. F. Russell, S. Tin","doi":"10.1109/IVNC.2006.335300","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335300","url":null,"abstract":"In this paper, local electrode atom probe is used to characterize the differences in interfacial partitioning that occurs between the TCP, gamma and gammasquare phases in single-crystal Ru-bearing Ni-based superalloys. Identification of the compositional variations in the topologically-close-packed (TCP) phases is also presented","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of a Normal-gate CNT-FED Using HOP Glass","authors":"K. Chu, W. Lei, Xiaobing Zhang, Y. Di, Jing Chen, Xiaxi Yang","doi":"10.1109/IVNC.2006.335255","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335255","url":null,"abstract":"Field emission display inherits excellent display qualities of traditional CRT and is a prospective flat display panel. Traditional normal gate FED consists of front and rare glass substrates, using spacer matrix for maintain fixed gap. Compared with diode structure, the modulation voltage is lower in triode structure because of the shorter gap between gate and cathode. However, in a normal gate triode, the field emission emitters can be easily destroyed because of the later fabrication of dielectric layer and gate. Moreover, cathode emission is quite sensitive to structure parameters such as dielectric layer' thickness, anode voltage and gate aperture; therefore, it is hard to guarantee emission uniformity. This paper introduces a structure similar to HOP one to solve the problems above. Gates and sequent spacers are screen printed on glass. Because the field emitters and hop glass are fabricated respectively, the emission emitters will not be destroyed in the later process the vacuum gap between cathode and gate replaces dielectric layer, so the small modulation voltage can be obtained. To ensure the mechanical strength of the hop glass plate, the thickness of the hop plate increases to 0.55 mm. Because glass is flatter than ordinary dielectric layer, better emission uniformity can be gotten. The hole of the hop plate is similar to dumbbell structure. We can change the shape of the hole to get good display effect. At present, the number of electrons reaching anode is less than 1% of electrons emitted by carbon nanotube. Thereupon, we should evaporate MgO to the lower half part of the holes to get secondary electrons. Now the voltage of gate is about 250 V. The technique flow shows as follows. At first, the CNTs paste was printed on cathode and the phosphors paste was printed on anode by screen-printing method and fired at 160degC. Then, the holes of hop plate are eroded by chemical method. The gate preparation is also use screen-printing method. And MgO is evaporated. Next, cathode plate, anode plate and gate plate are packaged by frit. At last, after pumping, we get the display panel","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115687160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Surface Morphologies of Printed Carbon Nanotubes by Heat Treatment and Their Field Emission Properties","authors":"H. Lee, Yang‐Doo Lee, W. Cho, Yun‐Hi Lee, Jaekwang Kim, S. Hwang, B. Ju","doi":"10.1109/IVNC.2006.335486","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335486","url":null,"abstract":"A heating process for obtaining free-standing carbon nanotube emitters is presented with the aim of improving field-emission properties from the screen-printed multiwalled carbon nanotube (MWCNT) films. Using an atmosphere with an optimum combination of nitrogen and air for heat treatment of CNT films, the CNT emitters can be made to protrude from the surface. This allows for a high emission current and the formation of very uniform emission sites without special surface treatment. The morphological change of the CNT film by this technique has eliminated additional processing steps, such as surface treatment which may result in secondary contamination and damage to the film","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124396081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Anode Locations on the Field Electron Emission from CNTs","authors":"Chunshan He, Jie Peng, Zhibing Li, Guihua Chen, Weiliang Wang, N. Xu","doi":"10.1109/IVNC.2006.335272","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335272","url":null,"abstract":"The modified neglect of diatomic overlap semiempirical quantum mechanical method, a multiscale quantum/classical hybrid method, is used to simulate the field electron emission in single-wall carbon nanotubes. The classical analysis and quantum computations have shown that a larger separation of the anode from the emitter enhances the field electron emission","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121031791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Measurements and Mass Resolution in a Laser-Pulsed 3DAP","authors":"A. Cerezo, P. Clifton, A. Gomberg, G.D.W. Smith","doi":"10.1109/IVNC.2006.335350","DOIUrl":"https://doi.org/10.1109/IVNC.2006.335350","url":null,"abstract":"To verify recent reports suggesting that femtosecond pulses generates field evaporation by direct field enhancement mechanism, a prototype laser-pulsed 3-dimensional atom probe was used. Femtosecond laser pulsing is shown to generate surface diffusion at sufficiently high power indicating that specimen heating is an important effect. Peak temperatures estimated on the basis of the reduction in evaporation field are consistent with the observed onset of surface diffusion. Based on these results and the linear variation of evaporation voltage with laser power, the authors concluded that the mechanism of evaporation enhancement is primarily thermal for femtosecond laser pulses. Using laser-pulsed 3DAP, tungsten specimen with a high mass spectrum resolution is obtained","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125035722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}