Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode

Abstract

This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V