厚萃取栅电极双门控场发射体的制备及特性研究

2006 19th International Vacuum Nanoelectronics Conference Pub Date : 2006-07-01 DOI:10.1109/IVNC.2006.335436

H. Tsubouchi, S. Sakuma, Y. Neo, H. Mimura, T. Sakai, M. Ushirozawa, T. Yamamoto

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摘要

本文提出了一种采用厚提取栅电极的双门spindt型场致发射极。模拟了发射极顶端电场随提取栅电极厚度的变化规律。这种发射极是用绝缘体上的硅晶片作为起始材料制造的。电流-电压特性表明，在约66 V的提取栅电压下可获得发射电流

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication and Characteristics of Double-Gated Field Emitters with Thick Extraction Gate Electrode

This paper presents a double-gated Spindt-type field emitter with thick extraction gate electrode. Simulation of the dependence of the electric field at the top of the emitter tip on the thickness of the extraction gate electrode is done. This emitter is fabricated using a silicon-on-insulator wafer as a starting material. The current-voltage characteristics show that emission current is obtained at an extraction gate voltage of about 66 V

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2006 19th International Vacuum Nanoelectronics Conference

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