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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials最新文献

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The Analysis of Parameters of Four-Item Phase Modulation QPSK 四项相位调制QPSK的参数分析
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292958
A. V. Mikushin, A.M. Shingarev
{"title":"The Analysis of Parameters of Four-Item Phase Modulation QPSK","authors":"A. V. Mikushin, A.M. Shingarev","doi":"10.1109/SIBEDM.2007.4292958","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292958","url":null,"abstract":"In article bases of four-item phase modulation QPSK are considered. Diagrams QPSK of a signal in time and frequency area are resulted. The basic variants of construction QPSK of modulators are considered. The method of research had been chose a method of the mathematical analysis.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131307513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Performance CMOS Phase Locked Loop For Ubiquitous Network 800MHz ISM Band 用于泛在网络的高性能CMOS锁相环，800MHz ISM波段
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292947
I. Hwang, B. M. Lee, Jong Hwa Lee
{"title":"High Performance CMOS Phase Locked Loop For Ubiquitous Network 800MHz ISM Band","authors":"I. Hwang, B. M. Lee, Jong Hwa Lee","doi":"10.1109/SIBEDM.2007.4292947","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292947","url":null,"abstract":"In this paper proposed the high performance PLL for ubiquitous network 800 MHz ISM band. We design the PFD(Phase Frequency Detector) by using TSPC (True Single Phase Clock) circuit to improve the performance and solve the dead-zone problem. CP (Charge Pump) and LP (Loop filter) is consisted of Negative feedback and current reuse circuit in order to solve current mismatch and switch mismatch problem. The VCO(Voltage controlled Oscillator) with S-stage differential ring oscillator is used to obtain exact output frequency. The divider is consisted of D-type flip flops asynchronous divider. The frequency divider has a constant division ratio 32. The frequency range of VCO has from 500 MHz to 1.1 GHz and has 1.8 GHz/v of voltage gain. The proposed PLL is based on 0.18 mum CMOS technology with 1.8 V supply voltage. PLL input frequency is 25 MHz and VCO output frequency is 800 MHz. The proposed PLL lock time is 6.5 us. It is evaluated by using cadence spectra RF tools.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120993874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New Life of Old Effect; Impact of the plezoresistive effect on physics and technics 新生命的旧效应;压阻效应对物理和工艺的影响
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292974
V. Gridchin
{"title":"New Life of Old Effect; Impact of the plezoresistive effect on physics and technics","authors":"V. Gridchin","doi":"10.1109/SIBEDM.2007.4292974","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292974","url":null,"abstract":"","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124142128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laparoscopy Ultrasonic Complex 腹腔镜超声复合体
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4293000
V. Khmelev, A. Shalunov, S. N. Tsyganok, R. Barsukov
{"title":"Laparoscopy Ultrasonic Complex","authors":"V. Khmelev, A. Shalunov, S. N. Tsyganok, R. Barsukov","doi":"10.1109/SIBEDM.2007.4293000","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4293000","url":null,"abstract":"The article describes results of creation a modern ultrasonic complex for laparoscopy and the open surgical operation. Principles a laparoscopy complex construction, feature and characteristics of the created equipment are described.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122611439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo Simulation of SiOx Layers Annealing 六层退火的蒙特卡罗模拟
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292902
N.A. GIadkih, N. Shwartz, Z. Yanovitskaja, A. V. Zverev
{"title":"Monte Carlo Simulation of SiOx Layers Annealing","authors":"N.A. GIadkih, N. Shwartz, Z. Yanovitskaja, A. V. Zverev","doi":"10.1109/SIBEDM.2007.4292902","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292902","url":null,"abstract":"Monte Carlo model of SiOx layers annealing and growth was developed. Model layers of stoichiometric SiO2 with initially randomly distributed components on partially filled diamond-like lattice tends to SiO4 tetrahedron formation during high-temperature annealing. Chains of tetrahedrons are found to be connected by oxygen atom. Portion of properly coordinated atoms was up to 70%. Presence of excess silicon in SiOx layers results in increasing of the portion of properly coordinated oxygen atoms (up to 95%). Starting from 17% of excess silicon nc-Si were created in annealed layer. MC simulation of initial stages of SiO2 growth during dry oxidation of atomically clean Si(111) surface was carried out taking into consideration silicon monoxide formation and decomposition.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129065533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon 电子辐照和退火FZ硅的温度稳定电导率
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292907
B. I. Mikhaylov, G. N. Kamaev, M. Efremov
{"title":"Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon","authors":"B. I. Mikhaylov, G. N. Kamaev, M. Efremov","doi":"10.1109/SIBEDM.2007.4292907","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292907","url":null,"abstract":"In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentration of defects with deep level on temperature stable conductivity was fulfilled. Shown that basis defects are explaining temperature stable of conductivity is divacancy (V2) and divacancy-oxygen complexes (V2O). The comparative analysis from test information showed that increase V2O concentration was not only tied change V2 concentration by anneals in temperature range 200~300degC.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126360069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Mechano-Physical Chemistry Effects in the Process of Collapsing the Cavitation Bubbles 空化气泡崩塌过程中力学-物理化学效应的模拟
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292991
E.I. Parfutchik, O. Lavrinenko, G. Leonov
{"title":"Simulation of Mechano-Physical Chemistry Effects in the Process of Collapsing the Cavitation Bubbles","authors":"E.I. Parfutchik, O. Lavrinenko, G. Leonov","doi":"10.1109/SIBEDM.2007.4292991","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292991","url":null,"abstract":"The mathematical model of the process of collapsing the cavitation bubbles is proposed. Is developed the information system, which simulates mechano-physical chemistry effects in this process. The results of experiments on the action of ultrasonic cavitation on the carbon-containing media are represented.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121569405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear Optical Properties of Ln2Ti2O7 (Ln = La, Pr, Nd) Oxides Ln2Ti2O7 (Ln = La, Pr, Nd)氧化物的非线性光学性质
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-07-01 DOI: 10.1109/SIBEDM.2007.4292912
A. Korotkov, V. Sapozhnikov, J. Grivel, V. Atuchin
{"title":"Nonlinear Optical Properties of Ln2Ti2O7 (Ln = La, Pr, Nd) Oxides","authors":"A. Korotkov, V. Sapozhnikov, J. Grivel, V. Atuchin","doi":"10.1109/SIBEDM.2007.4292912","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292912","url":null,"abstract":"Noncentrosymmetric oxides Ln<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> (Ln = La, Pr, Nd) were synthesized and levels of second order nonlinear optical susceptibility chi<sup>(2)</sup> were measured with powder Kurtz-Perry method. The chi<sup>(2)</sup> values are equal to 1.3 pm/V for all these three titanates.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132109132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of Field Plate to Increase Breakdown Voltage of DMOS 场极板在提高DMOS击穿电压中的应用
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-07-01 DOI: 10.1109/SIBEDM.2007.4292926
A. Kluchnikov, A. Krasukov
{"title":"Application of Field Plate to Increase Breakdown Voltage of DMOS","authors":"A. Kluchnikov, A. Krasukov","doi":"10.1109/SIBEDM.2007.4292926","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292926","url":null,"abstract":"This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134486636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research ofthe Methods of Increase of Data Rate for GSM Networks GSM网络中提高数据速率的方法研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-07-01 DOI: 10.1109/SIBEDM.2007.4292960
A. S. Smagin, D. Golovanov
{"title":"Research ofthe Methods of Increase of Data Rate for GSM Networks","authors":"A. S. Smagin, D. Golovanov","doi":"10.1109/SIBEDM.2007.4292960","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292960","url":null,"abstract":"The methods of increase of data rate in networks GSM/GPRS using of EDGE technology are considered in this article. Introduction of this technology represents \"superstructure\" above the existing model of radio access GSM. This isn't demanding transformation of an infrastructure of networks GSM/GPRS, and using the same spectral range, thus allows providing high data rate under low initial capital investments.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121490649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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