电子辐照和退火FZ硅的温度稳定电导率

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292907

B. I. Mikhaylov, G. N. Kamaev, M. Efremov

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摘要

本文采用退火法对具有点辐射缺陷的FZ硅在200~300℃范围内的温度稳定电导率进行了研究。对深能级缺陷的类型和浓度对温度稳定电导率的影响进行了计算和分析。表明基缺陷是解释电导率温度稳定的主要原因，是空位(V2)和空位-氧配合物(V2O)。试验资料对比分析表明，在200~300℃温度范围内，通过退火处理，V2O浓度的增加不仅与V2浓度的变化有关。

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Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon

In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentration of defects with deep level on temperature stable conductivity was fulfilled. Shown that basis defects are explaining temperature stable of conductivity is divacancy (V2) and divacancy-oxygen complexes (V2O). The comparative analysis from test information showed that increase V2O concentration was not only tied change V2 concentration by anneals in temperature range 200~300degC.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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