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场极板在提高DMOS击穿电压中的应用

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-07-01 DOI:10.1109/SIBEDM.2007.4292926
A. Kluchnikov, A. Krasukov
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引用次数: 0

摘要

本文给出了场极板击穿DMOS晶体管的数值模拟。Sentaurus TCAD被用来模拟故障。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Application of Field Plate to Increase Breakdown Voltage of DMOS
This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.
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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials
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