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2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)最新文献

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Behavioral modeling for digital predistortion of RF power amplifiers: from Volterra series to CPWL functions 射频功率放大器数字预失真的行为建模:从Volterra系列到CPWL函数
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440126
A. Zhu
{"title":"Behavioral modeling for digital predistortion of RF power amplifiers: from Volterra series to CPWL functions","authors":"A. Zhu","doi":"10.1109/PAWR.2016.7440126","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440126","url":null,"abstract":"This paper gives an overview of behavioral modeling for digital predistortion of RF power amplifiers. It starts with discussing the specific system requirements and then explains what constraints must be satisfied when developing behavioral models for this application. Both theoretical aspects and practical implementation issues are discussed. Historical development and recent innovation are reviewed with a conclusion of future outlook in the end.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126028359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Wideband linear distributed GaN HEMT MMIC power amplifier with a record OIP3/Pdc 宽带线性分布GaN HEMT MMIC功率放大器，具有创纪录的OIP3/Pdc
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440127
J. Moon, Jongchan Kang, Dave Brown, R. Grabar, D. Wong, H. Fung, P. Chan, D. Le, C. Mcguire
{"title":"Wideband linear distributed GaN HEMT MMIC power amplifier with a record OIP3/Pdc","authors":"J. Moon, Jongchan Kang, Dave Brown, R. Grabar, D. Wong, H. Fung, P. Chan, D. Le, C. Mcguire","doi":"10.1109/PAWR.2016.7440127","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440127","url":null,"abstract":"We report on multi-octave (100 MHz - 8 GHz) GaN HEMT nonuniform distributed amplifier (NDPA) with and without linearization in a MMIC architecture for the first time. The NDPAs were fabricated with 0.14-μm field-plate AlGaN/GaN HEMT technology with fT of 58 GHz and breakdown voltage of 90 - 100 V. The NDPAs were built with six sections in a nonuniform distributed amplifier approach. The small signal gain was ~10 dB over the band with saturated CW output power of 33 - 37 dBm at Vdd = 20 V. The PAE was >35% - 30% up to 6 GHz. The linear NDPAs consist of main and gm3 cells, and show a small signal gain of 6 - 9 dB due to input RF signal routing. The Psat was ~35 dBm at Vdd = 20 V. Based on two-tone testing, the linear NDPA shows improved OIP3 of >50 dBm, compared to OIP3 of 42 dBm of the NDPA without linearization. The resulting OIP3/Pdc is 16:1, which is the highest reported amongst GaN-based distributed amplifiers.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130371219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
A 53% PAE envelope tracking GaN power amplifier for 20MHz bandwidth LTE signals at 880MHz 一种53% PAE包络跟踪GaN功率放大器，用于20MHz带宽的880MHz LTE信号
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440155
Youjiang Liu, C. Yoo, J. Fairbanks, Jonmei J. Yan, D. Kimball, P. Asbeck
{"title":"A 53% PAE envelope tracking GaN power amplifier for 20MHz bandwidth LTE signals at 880MHz","authors":"Youjiang Liu, C. Yoo, J. Fairbanks, Jonmei J. Yan, D. Kimball, P. Asbeck","doi":"10.1109/PAWR.2016.7440155","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440155","url":null,"abstract":"This paper presents a high efficiency envelope tracking (ET) GaN power amplifier (PA) operated at 880MHz, for wide bandwidth signals. Using a 16-QAM 20MHz bandwidth LTE signal with 6.6dB PAPR, a 54.4% drain efficiency and 52.8% power added efficiency (PAE), including both the envelope amplifier (EA) and the RF-PA, were measured, along with a 15.3dB gain and 7.4-W output power. The corresponding EVM and E-UTRA ACPR1 were 1.88% and -48.5dBc, meeting the linearity specifications. The linearity was achieved using a novel digital predistortion (DPD) technique. To the best of the authors' knowledge, the PAE sets a new record for high power ET PAs with 20MHz bandwidth high PAPR signals. It also demonstrates the best comprehensive performances of the ET PA, in terms of efficiency, gain, bandwidth and linearity.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115662908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Envelope tracking power amplifier design considerations for handset applications 手机应用的包络跟踪功率放大器设计考虑因素
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440154
Ming Ji, D. Teeter, S. Richard, Eric Shull, Dennis Mahoney
{"title":"Envelope tracking power amplifier design considerations for handset applications","authors":"Ming Ji, D. Teeter, S. Richard, Eric Shull, Dennis Mahoney","doi":"10.1109/PAWR.2016.7440154","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440154","url":null,"abstract":"This paper discusses handset power amplifier (PA) design considerations for envelope tracking applications. Tradeoffs between ET mode efficiency, gain, linearity, and RX band noise are described within the constraints of the handset environment. A quasi-F-1 710 MHz HBT PA is discussed which improves peak efficiency by 5 points. Options for the Vcc shaping function are analyzed to address the impact on efficiency, gain, and noise. The paper concludes by comparing stability of two ET system configurations.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"4 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131436544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An RF-input chireix outphasing power amplifier 一种射频输入的基音共相功率放大器
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440129
Noushin Faraji, T. Barton
{"title":"An RF-input chireix outphasing power amplifier","authors":"Noushin Faraji, T. Barton","doi":"10.1109/PAWR.2016.7440129","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440129","url":null,"abstract":"This work presents for the first time an RF-input power amplifier (PA) based on Chireix outphasing, a technique employing two nonlinear but efficient PAs in a power-combining architecture that provides output power control. The RF-input approach eliminates the digitally-intensive signal component separator found in conventional outphasing architectures. We show that a passive network can be used to generate the phase- and amplitude-modulated signals used to drive nonlinear branch PAs in the outphasing system. The technique is demonstrated at 2.14 GHz in a 40-W PA and characterized with both CW and modulated signals.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122002774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Recent progress on high-efficiency CMOS and SiGe RF power amplifier design 高效CMOS和SiGe射频功率放大器设计的最新进展
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440130
D. Lie, J. Tsay, T. Hall, T. Nukala, Jerry Lopez, Yan Li
{"title":"Recent progress on high-efficiency CMOS and SiGe RF power amplifier design","authors":"D. Lie, J. Tsay, T. Hall, T. Nukala, Jerry Lopez, Yan Li","doi":"10.1109/PAWR.2016.7440130","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440130","url":null,"abstract":"The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will, therefore, present an up-to-date review on recent design trends of silicon-based PAs, with the focus on high-efficient broadband wireless and 5G PA design.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129841833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Using waveform engineering to understand the impact of harmonic terminations during 5:1 VSWR stress tests 使用波形工程了解5:1 VSWR压力测试中谐波终止的影响
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 2016-03-28 DOI: 10.1109/PAWR.2016.7440161
D. Loescher, P. Tasker, S. Cripps
{"title":"Using waveform engineering to understand the impact of harmonic terminations during 5:1 VSWR stress tests","authors":"D. Loescher, P. Tasker, S. Cripps","doi":"10.1109/PAWR.2016.7440161","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440161","url":null,"abstract":"There are many applications where the operational environment of the antenna is challenging, which means its impedance can be highly variable, so the RF PA needs to be able to operate over a wide variety of loads without stress or failure. Assessing this is a key requirement of reliability testing, with VSWR sweeps being a typical way to test this durability. It is important to make sure the amount of information gained from these sweeps is maximized, so adding RF I-V waveform information can help give a more accurate view of what is occurring at the current generator plane. Also if the fundamental and second harmonic loads are systematically swept significant voltage stress, possibly not seen during the current conventional VSWR tests, is observed, which has implications in both the output matching network design and the current method of testing.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"45 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132286905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-power, high-efficiency digital polar doherty power amplifier for cellular applications in SOI CMOS 高功率，高效率的数字极性多赫蒂功率放大器，用于蜂窝应用的SOI CMOS
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440131
Varish Diddi, H. Gheidi, J. Buckwalter, P. Asbeck
{"title":"High-power, high-efficiency digital polar doherty power amplifier for cellular applications in SOI CMOS","authors":"Varish Diddi, H. Gheidi, J. Buckwalter, P. Asbeck","doi":"10.1109/PAWR.2016.7440131","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440131","url":null,"abstract":"This paper presents a Digital Doherty Power Amplifier (DDPA) with high back-off efficiency. The main and peaking amplifiers are implemented in 180 nm CMOS SOI as Digital Power Amplifiers (DPAs) with 10 bit amplitude control. The Doherty combiner is implemented using external matching components on a PCB, with lumped elements synthesized to provide equivalent characteristics of impedance inverter and offset-line. Phase adjustment between main and peaking DDPAs allows optimization of efficiency. CW measurements for the DDPA at 900 MHz correspond to 33.1 dBm peak power with 55.5% efficiency. This is highest reported output power for CMOS Doherty amplifiers. The efficiency at 6 dB back-off reaches 52.5%.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"76 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116353829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier 3.6 W/mm高功率密度W波段InAlGaN/GaN HEMT MMIC功率放大器
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440153
Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe
{"title":"3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier","authors":"Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe","doi":"10.1109/PAWR.2016.7440153","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440153","url":null,"abstract":"We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131895752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
Improvement of LDMOS MMICs compactness LDMOS微处理器紧凑性的改进
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440157
Sullivan Plet, G. Bouisse, M. Campovecchio
{"title":"Improvement of LDMOS MMICs compactness","authors":"Sullivan Plet, G. Bouisse, M. Campovecchio","doi":"10.1109/PAWR.2016.7440157","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440157","url":null,"abstract":"This paper describes an innovative mean of realizing input matching networks for LDMOS MMICs, by using a very compact broadband transformer balun, which is integrated in the input matching network, in the active device gate plane instead of the 50 ohms port. The aim of this technique is to significantly reduce the silicon area, which is induced by the base station market trend of compactness improvement. This is illustrated through the design of a 1.8 GHz to 2.2 GHz MMIC.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133283243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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