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2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)最新文献

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Investigation of the practical output load impedance sensitivity of a 10 W GaN device subject to gate bias variation 栅极偏置变化下10w GaN器件实际输出负载阻抗灵敏度的研究
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440160
Dragan Gecan, M. Olavsbråten, K. Gjertsen
{"title":"Investigation of the practical output load impedance sensitivity of a 10 W GaN device subject to gate bias variation","authors":"Dragan Gecan, M. Olavsbråten, K. Gjertsen","doi":"10.1109/PAWR.2016.7440160","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440160","url":null,"abstract":"This paper shows practical output load impedance sensitivity of a 10 W GaN HEMT device depending on a gate bias. In order to determine how much the output impedance changes for different biasing points, Load Pull measurement is performed for different biasing points from deep class-AB to class-A. It has been found that load impedances for simultaneously high output power as well as high power added efficiency (PAE) do not change much. It is also shown that matching impedances for second and third harmonic, optimized for PAE have a common overlapping area. These results indicate that this device is suitable for dynamic gate biasing.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133631877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Experimental characterization and control of a four-way non-isolating power combiner 四路非隔离功率合成器的实验表征与控制
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440128
Prathamesh H. Pednekar, Leila Deng, T. Barton
{"title":"Experimental characterization and control of a four-way non-isolating power combiner","authors":"Prathamesh H. Pednekar, Leila Deng, T. Barton","doi":"10.1109/PAWR.2016.7440128","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440128","url":null,"abstract":"In multi-way outphasing systems, a particular output power can be produced by multiple different combinations of input control phases. As a result, outphasing control angles can be selected to satisfy additional criteria, for example to control the input impedances to the four ports. This work explores an experimentally-determined outphasing control law based on network analyzer measurements of a fabricated 4-way combining structure. The experimental control law improves matching among the four input ports by approximately 10%.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125533298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
2.6 GHz 4 watt GaN-HEMT two-stage power amplifier MMIC for LTE small-cell applications 用于LTE小蜂窝应用的2.6 GHz 4瓦GaN-HEMT两级功率放大器MMIC
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440132
Wonseob Lim, Hwiseob Lee, Hyunuk Kang, Wooseok Lee, Youngoo Yang
{"title":"2.6 GHz 4 watt GaN-HEMT two-stage power amplifier MMIC for LTE small-cell applications","authors":"Wonseob Lim, Hwiseob Lee, Hyunuk Kang, Wooseok Lee, Youngoo Yang","doi":"10.1109/PAWR.2016.7440132","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440132","url":null,"abstract":"This paper presents a two-stage PA MMIC using 0.4-μm GaN-HEMT. Two-stage structure is adopted to take its high gain property and simple inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as a part of the shunt inductors in the matching network. The two-stage PA MMIC was fabricated with a size of 2.0×1.9 mm2 and was mounted on the 4×4 QFN package for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz at the 2.6 GHz band, the PA MMIC exhibited a gain of 30 dB, a DE of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two PA MMICs for carrier and peaking amplifiers, DPA was designed and evaluated. At a 6-dB back-off output power level of 39 dBm, a gain of 24.7 dB and a DE of 43.5% were achieved.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116973152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A high-order model looking beyond the first-order harmonic superposition assumption 一个超越一阶谐波叠加假设的高阶模型
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI: 10.1109/PAWR.2016.7440159
D. Bespalko, A. Amini, S. Boumaiza
{"title":"A high-order model looking beyond the first-order harmonic superposition assumption","authors":"D. Bespalko, A. Amini, S. Boumaiza","doi":"10.1109/PAWR.2016.7440159","DOIUrl":"https://doi.org/10.1109/PAWR.2016.7440159","url":null,"abstract":"In this paper, a hybrid high-order behavioural model is proposed to mimic the response of strongly nonlinear unmatched RF transistors. In this model, a high-order Multi-Harmonic Volterra (MHV) behavioural model is used to predict the DC and fundamental frequency components of the output signal, while higher harmonic components are predicted by the Poly-Harmonic Distortion (PHD) model. The added coefficients of the MHV model augment the first-order expansion (harmonic superposition) of the PHD model to improve the model accuracy where it is needed. The hybrid MHV-PHD model improves the DC drain current prediction by 5dB and fundamental frequency output-power by 2dB in terms of Normalized Mean Squared Error (NMSE), while improving overall time-domain prediction by 1dB.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"56 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116572582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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